2SK2391 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L?-7-MOSV ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm
APPLICATIONS
$3.2402 2.7202 ea © 4V Gate Drive al 2 —— Fe @ Low Drain-Source ON Resistance : RED§ (ON) =66m0 (Typ.) 3 | | | bal © High Forward Transfer Admittance : [Yfs|=16S (Typ.) “ TOL aa © Low Leakage Current : Ipgg=100jA (Max.) (Vpg=100V) | ‘ A @ Enhancement-Mode — : Vih=0.8~2.0V (Vpg=10V, Ip=1mA) oxss0.5f 2 | MAXIMUM RATINGS (Ta = 25°C) 25440.25, 2540.25 CHARACTERISTIC SYMBOL 2 —s|_ S Drain-Source Voltage Vpss 5 a] A Drain-Gate Voltage (Rqg=20k | Vpcr , @) Gate Soures Voltage Vass 1 oar i J pe | m0 TA source Drain Current Pul: A | Pulse [| Ipp | 80 | A Wee _ Drain Power Dissipation (Te=25°C) [ Pp | 3 | w | = EIAJ SC-67 Single Pulse Avalanche Energy** [| Eag | 208 | mJ | Avalanche Current [tar [20 [a |[osimma_2-10R1B Repetitive Avalanche Energy* Weight : 1.9¢ Channel Temperature Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case Thermal Resistance, Channel to Ambient Rth (ch-a) | 62.5 [°C/W] Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=25V, Starting Te, =25°C, L=840”H, Rg=250, TAR=20A This transistor is an electrostatic sensitive device. Please handle with caution. Q61001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can maltunction or ‘all due to their inherent electrical Sensivty and vulnerability to physical stress. It is the responsibilty of the buyer, when lizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein 's presented only as 2 guide for the applications of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is, subject to change without notice 1998-11-12 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Igss_ _|Vas=+16V, Vpg=0V [| — | — | +10] ZA | Drain Cut-off Current Ipss__|Vps=100V, Vgs=0V [| — | — | 100] ZA | Drain-Source Breakdown = Fomafiorins ves ow [— [| v | Gate Threshold Voltage Vps=10V, Ip=1mA [ os | — | 20] Vv | Drain-Source ON Resistance |RDS (ON) Vas=4V, I1p=10A | = | 0.09 | 0.13] fe) Forward Transfer _ _ Tnput Capacitance [= [aio Reverse Transfer _ _ _ Output Capacitance = [a0 VGS oy al Vout Turn-on Time Switching [remon tine | ton | S RL= |- | »| - | Ti z 3.30 ‘ime Vpp=50V 7 . VIN : tr, t¢<5ns, Turn-off Time toff Duty <1%, ty=10/s 140 Total Gate Charge (Gate- Q, 50 Source Plus Gate-Drain) 8 Vpp=80V, Vgg=10V c Gate-Source Charge Ip=27A [= | 34, — | * Gate-Drain Miller") Charge P= 6 — SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) cuanacrenisic | sao. | _ TaST CONDITION Continuous Drain Reverse l A Current DR Diode Forward Voltage VpsF __|IpR=20A, Vgg=0V | — | — [-17] v | Reverse Recovery Time IpR=20A, Veg=0V = [i556 [= ae] Reverse Recovery Charge dIpR/dt=50A/ us [ — | 031 | — [ xc | MARKING zm * Lot Number K2391 TYPE . C1 LE Month (Starting from Alphabet A) QUY Year (Last Number of the Christian Era) 1998-11-12 2/5
Ip — Vps 50 Ip - Vps ” COMMON SOURCE Yep. wa [| }/ |_| COMMON SOURCE Te=25°C Li} y || arm Te=25°C 2% GIA 2 fe > EY Re EE ann 0 g Yoo Py | | an 74 2 |W | | tt
2 L226 = ot | as
fe ven | pH | }) A WOT TT Tt TT a a a eT) . — ae 6 0 DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN-SOURCE VOLTAGE Vpg (V) Ip - Vi Vps — Vas “| aL TT IT | “CTI 7 He = FECEENAEH] somone 2 “TTT ays an 8 TN re é : SNOT ea LOE 3s of S| e CH EEE 5 f. 3 us SHE, “ENS z 1.0) = ptt | fis] oe eee, see 3 I [Ne TT poate J ee 0 1 2 3 4 5 GATE-SOURCE VOLTAGE Vgg (V) GATE-SOURCE VOLTAGE Vgg (V) IYfs| - Ip Rps(ON) — Ip ere eseee common source Fa 8 —— le gg] Te=25°C — a a 2 ss a : ) ee] B.C Fo Z [| = En se pee Sell & LU! eriill ge wh cee 58 Se ees 22 bee 2 SSS Sw Ht Be ay eee eee es ee z eed ae BL TT TTD common source ee ee 0 FL LTT TTT rose * a LTTE FETT 1 3 5 10 30 (50 100 oon 3 5 10 30 «50 100 DRAIN CURRENT Ip (A) DRAIN CURRENT Ip (A) TT S«*C“NB-T I-12 35
Rps(ON) - Te IpR - Vps 0.29 TL ll. sl a a a 3 | Source. A = oti ft | | | tt Z Litt tity 2 SS SS SS SS Sa SS
0.5 A a ee ee ee ee ee
& g 0.10) ||| | | Lamm 5 10 BEAD AS80008 3° eA 1 eS $f a 3 | ee . rH a 2 anne 2 (fA Z fos | [| Fy Ves=10V g ‘ef f= — COMMON SOURCE POT ee ES some A og@_t_# ttt 11 a CD oa 0B 1B CASE TEMPERATURE Te (°C) DRAIN-SOURCE VOLTAGE Vpg (V) CAPACITANCE — Vps Vth — Te SSS a & — ‘Tcommon source TTT TIT sono EE EE 5 | Yos=i0v _ SSS F | io=tma rity ty ee eS Se 8 LO Zz 300} Ft SENS > 2 Z SSS co a TRLUPT PPT $f LUT TIP 5 COPEL S _4g| COMMON SOURCE eer a re 2 1 PKL | vos=0V FEE Ht Col eT tL LLC | 9°) exannte | E Pc a 01 0.3 1 3 10 30 100 -80 -40 0 40 80 120 160 DRAIN-SOURCE VOLTAGE Vpg (V) CASE TEMPERATURE Te (°C) Pp — Te DYNAMIC INPUT/OUTPUT
30 CHARACTERISTICS
se [| TTT TTT | s offer LT, ¢ ee ge [\\ [eee [wel ys s“OOCCETe Cg tye A eJi Ppp) ¢ HA poser) OF RAH PSO RSSOO oP Ae
5 IN “NU Ey
ee ee * SEE PP * 0 40 80 120 160 0 20 40 60 80 CASE TEMPERATURE Te (°C) TOTAL GATE CHARGE Qg (nC) 1998-11-12 4/5
Tth — tw
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Saco Rixteney=s228crw does EH EE 10u 1004 im 10m 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA Eas — Teh Tm noo ee a Lous unsere HL | LITT | | ce A , SE Pee 2 ai SER SXco | * FTPPrereereel i Ip MAX. DCI Est a 30) 300)
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aa] % Sate Nowneremmve FR CHANNEL TEMPERATURE Ten CO) 0.3] Curves must be derated linearly on sev most bed CH with inerease fn tempera B Vise MAX | || VDSS. bs 1 3 10 30 100 300 1sv IAR DRAIN-SOURCE VOLTAGE Vpg (V) 1sv fl | / \\ 7 7 \\ i Vpp /’ \\ Vps 4 \\ TEST CIRCUIT WAVE FORM Peak IAR=20A, RG=252 oy. —Bypss_ Vpp=2v, L=8404H Fas=Q le r ‘“Bypss-Vop) a CS Pe