2SK2381 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSV) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm
APPLICATIONS
lot03 932202 2749.2 Eze ¢ Low Drain-Source ON Resistance: RDg (QN)=0.562 (Typ.) 4 EE © g e@ High Forward Transfer Admittance : |Yfs|=4.5S (Typ.) Fi | | | ~ © Low Leakage Current : Ipgg=100jA (Max.) (Vpg=200V) wT J df e@ Enhancement-Mode : Vth=1.5~3.5V (Vpg=10V, Ip=1mA) | é | ozst0.sH a CHARACTERISTIC SYMBOL UNIT 2 S| $ I} FS Drain-Source Voltage Voss [200] a > Drain-Gate Voltage (RGg = 20k) Vpcr | 200 | V |} ~ 1 ) Gate-Source Voltage Vass 1. GATE V4 SO | : i 3. SOURCE Drain Current | Pulse | Ip | 20 | A Drain Power Dissipation (Te=25°C) [ Pp | 2 | w | SEDEC — Single Pulse Avalanche Energy** | Eag | 65 | mJ || EIAT SC-67 Avalanche Current TOSHIBA __2-10R1B Repetitive Avalanche Energy® Weight : 19g Channel Temperature Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel To Case Thermal Resistance, Channel To Ambient Rth (ch-a) | 62.5 [°C/W] Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=50V, Starting T,,=25°C, L=4.2mH, Rg=250, TaR=5A This transistor is an electrostatic sensitive device. Please handle with caution. 26100 1EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to thei inherent electrical sensitivity and. vulnerability to physical stress. it's the responsibilty of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook @ The information contained herein is presented only as a guide for the applications of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-11-12 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Igss__[Vas=+16V, Vps=0V | — | = | +10] pa | Drain Cut-off Current | tss__|Vps=200v, Ves=ov | = | = | 100 | pa | Drain-Source Breakdown Voltage 'V (BR) DSS|Ip=10mA, Vgg=0V | a0 | - | - | v | Gate Threshold Voltage Vps=10V, Ip=imA [a5 | — | 35] v | Drain-Source ON Resistance [Rpg (on) |VGS=10V, Ip=2.5A | — | o56| o8 | a | Forward Transfer Admittance Mil |VDS=10V, 1D=2.5A 2] as) - | s | Input Capacitance | — | 440] — | Reverse Transfer Vpg=10V, Vgg=0V, f=1MH: F Output Capacitance | = | 120] — | vm Ip=2.5A wv Vout [=| »| -| Ves oy tl Switching 8 RL=400 |= | »| =| Time © Fall Time tf 15 Vpp=100V ; VIN : tr, tp<5ns, Turn-off Time | top Duty <1%, tw=10ps Total Gate Charge (Gate- a Qe . 10 Source Plus Gate-Drain) Vpp=100V, Vgg=10V c Gate-Source Charge [ Qs | Ip=5A [— | «| — | " Gate-Drain (“Miller”) Charge P=] 4 — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Continuous Drain Reverse 5] A Current Pulse Drain Reverse Current | Ippp | — | = | = [20] a | Diode Forward Voltage Vpsr_|Ipr=5A, Vog=0V [| — | — |[-20] v | Reverse Recovery Time IpR=5A, Vag=0V | — | 150 | — | ns | Reverse Recovery Charge alpR/ at= 100A / ys | = [oss] — | zc | MARKING cz > Lot Number K2381-}— TYPE ; i Month (Starting from Alphabet A) UU Year (Last Number of the Christian Era) 1998-11-12 2/5
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