2SK2371 NEC | Alldatasheet

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Technical content

MOS FIELD EFFECT TRANSISTORS 2SK2371/2SK2372

DESCRIPTION

The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

FEATURES

  • Low On-Resistance 2SK2367: R DS(ON) = 0.25 Ω (VGS = 13 V, I D = 10 A) 2SK2368: R DS(ON) = 0.27 Ω (VGS = 13 V, I D = 10 A)
  • Low C iss Ciss = 3600 pF TYP.
  • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage (2SK2371/2SK2372) VDSS 450/500 V Gate to Source Voltage V GSS ±30 V Drain Current (DC) I D(DC) ±25 A Drain Current (pulse)* I D(pulse) ±100 A Total Power Dissipation (T C = 25 °C) P T1 160 W Total Power Dissipation (T a = 25 °C) P T2 3.0 W Channel Temperature T ch 150 °C Storage Temperature T stg –55 ~ +150 °C Single Avalanche Current I AS 25 A Single Avalanche Energy E AS 446 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting T ch = 25 °C, RG = 25 Ω , VGS = 20 V → 0 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. © 1995 DATA SHEET Document No. TC-2505 (O.D. No. TC-8064 Date Published January 1995 P Printed in Japan SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Body Diode Source Drain Gate 3.2 ± 0.2 4.7 MAX. 1.57.0 2.8 ± 0.10.6 ± 0.1 1.0 ± 0.22.2 ± 0.2 5.45 5.45 15.7 MAX. 4.5 ± 0.2 20.0 ± 0.2 3.0 ± 0.2 6.0 1.0 19 MIN. 1. Gate 2. Drain 3. Source 4. Fin (Drain)MP-88 PACKAGE DIMENSIONS (in millimeters)

ELECTRICAL CHARACTERISTICS (T A = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Drain to Source On-Resistance R DS(on) 0.2 0.25 Ω VGS = 10 V 2SK2371 0.22 0.27 ID = 13 A 2SK2372 Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 V VDS = 10 V, I D = 1 mA Forward Transfer Admittance yfs  8.0 S VDS = 10 V, I D = 13 A Drain Leakage Current IDSS 100 µA VDS = VDSS, VGS = 0 Gate to Source Leakage Current IGSS ±100 nA VGS = ± 30 V, V DS = 0 Input Capacitance Ciss 3600 pF VDS = 10 V Output Capacitance Coss 700 pF VGS = 0 Reverse Transfer Capacitance Crss 50 pF f = 1 MHz Turn-On Delay Time td(on) 40 ns ID = 13 A Rise Time tr 70 ns VGS = 10 V Turn-Off Delay Time td(off) 160 ns VDD = 150 V Fall Time tf 60 ns RG = 10 Ω RL = 11.5 Ω Total Gate Charge QG 95 nC ID = 25 A Gate to Source Charge QGS 20 nC VDD = 400 V Gate to Drain Charge QGD 40 nC VGS = 10 V Body Diode Forward Voltage VF(S-D) 1.0 V IF = 25 A, V GS = 0 Reverse Recovery Time trr 500 ns IF = 25 A, V GS = 0 Reverse Recovery Charge Qrr 4.5 µC di/dt = 50 A/ µS Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time VGS = 20-0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD PG. RG = 10 Ω D.U.T. RL VDD RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS t = 1US Duty Cycle ≤ 1% VGS Wave Form ID Wave Form VGS ID 10 % 10 % 90 % 90 % 90 % 10 % VGS (on) ID ton toff td (on) tr td (off) tft Test Circuit 3 Gate Charge The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

TYPICAL CHARACTERISTICS (T A = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 20 140 160 TC - Case Temperature - (°C) dT - Percentage of Rated Power - % DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - (V) ID - Drain Current - (A) FORWARD BIAS SAFE OPERATING AREA 10 100 1 000 VDS - Drain to Source Voltage - (V) ID - Drain Current - (A) 0 6040 80 100 120 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 20 140 160 150 TC - Case Temperature - (°C) PT - Total Power Dissipation - (W) 120 6040 80 100 120 180 210 DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - (V) ID - Drain Current - (A) 1 000 100 0.1 1.0 Pulsed 51 5 10 8 V 6 V 5 V VGS = 10 V 51 0 1 5 100 0.1 VDS = 10 V Pulsed Tch = 125 °C 75 °C 25 °C –25 °C 100 ID (pulse) TA = 25 °C Single Pulse PW = 10 s 100 sRDS (on) Limited ( VGS = 10 V) Power Dissipation Limitd10 ms 1 ms 2SK2371 2SK2372 ID (DC) ID (DC) µ µ

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - (s) rth (t) - Transient Thermal Resistance - (°C/W) 10 100 1 m 10 m 100 m 1 10 100 1000 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 ID - Drain Current - (A) yfs - Forward Transfer Admittance - (S) 51 5 2 0 VGS - Gate to Source Voltage - (V) RDS (on) - Drain to Source On-State Resistance - (Ω ) GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - (°C) VGS (off) - Gate to Source Cutoff Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.5 ID - Drain Current - (A) RDS (on) - Drain to Source On-State Resistance - (Ω ) 0.1 1.0 0.5 1.0 1.0 10 1000 100 VDS = 10 V Pulsed Tch = –25 °C 25 °C 75 °C 125°C 1.5 1.0 0.5 Pulsed ID = 25 A 13 A 6 A 1.0 10 1000 100 Pulsed VGS = 10 V –50 0 50 100 150 4.0 3.5 3.0 2.5 2.0 1.5 1.0 Tc = 25 °C Single Pulse Rth (ch-a) = 41.7 °C/W Rth (ch-c) = 0.78 C/W 1000 100 1.0 0.1 0.01 0.001 µµ

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Qg - Gate Charge (nC) VDS - Drain to Source Voltage - (V) Tch - Channel Temperature - (C) RDS (on) - Drain to Source On-State Resistance - (A) REVERSE RECOVERY TIME vs. REVERSE DRAIN CURRENT IF - Forward Current - (A) tW - Reverse Recovery Time - (ns) DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - (V) SOURCE TO DRAIN DIODE FORWARD VOLTAGE VSD - Source to Drain Voltage - (V) ISD - Diode Forward Current - (A) 1.5 100 1.0 0.1 0.01 1.00.50 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE V DS - Drain to Source Voltage - (V) Ciss, Coss, Crss - Capacitance - pF 1.0 10 100 1000 ID - Drain Current - (A) td (on), tr, td (off), tf - Switching Time - (ns) 100 0.1 1.0 SWITCHING CHARACTERISTICS –50 0 50 100 150 1.0 0.5 ID = 25 A 13 A VGS = 10 V VGS = 0 V Pulsed 1000 10000 1 000 100 1.0 0.1 1.0 10 100 Ciss Coss Crss tr VDD = 150 V VGS = 10 V Rin = 10 Ω 1.0 10 100 600 500 400 300 200 100 0.1 di/dt = 50 A/ s VGS = 0 02 0 8 0 40 120 500 400 300 200 100 60 100 VGS VDS VDD = 400 V 250 V 125 V tftd (off) td (on) VGS = 0 V f = 1 MHz µ

L - Inductive load - (H) IAS - Single Avalanche Energy - (A) SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100 Starting Tch - Starting Channel Temperature - (°C) EAS - Single Avalanche Energy - (mJ) SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE 25 50 75 125 150 100 600 500 400 300 200 100 IAS 25 A RG = 25 W VGS = 20 V → 0 VDD = 150 V VDD = 150 V RG = 25 Ω VGS = 20 → 0 V IAS = 25 A EAS = 446 mJ 100 1.0 µ

Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037

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