2SK2363 NEC | Alldatasheet

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Technical content

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION

The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

FEATURES

  • Low On-Resistance 2SK2363: R DS (on) = 0.5 Ω (VGS = 10 V, I D = 4.0 A) 2SK2364: R DS (on) = 0.6 Ω (VGS = 10 V, I D = 4.0 A)
  • Low Ciss C iss = 1600 pF TYP.
  • High Avalanche Capability Ratings
  • Isolate TO-220 Package ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C) Drain to Source Voltage (2SK2363/2SK2364) VDSS 450/500 V Gate to Source Voltage V GSS ±30 V Drain Current (DC) I D(DC) ±8.0 A Drain Current (pulse) * ID(pulse) ±32 A Total Power Dissipation (T c = 25 ˚C) P T1 35 W Total Power Dissipation (T A = 25 ˚C) P T2 2.0 W Channel Temperature T ch 150 ˚C Storage Temperature T stg –55 to +150 ˚C Single Avalanche Current IAS 8.0 A Single Avalanche Energy EAS 320 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting T ch = 25 ˚C, RG = 25 Ω , VGS = 20 V → 0 2SK2363/2SK2364 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE © 1994 DATA SHEET Document No. TC-2504A (O. D. No. TC-8063A) Date Published May 1995 P Printed in Japan 10.0±0.3 4.5±0.2 3.2±0.2 2.7±0.2 2.5±0.11.3±0.2 1.5±0.2 2.54 0.7±0.1 2.54 0.65±0.1 123 3±0.14±0.2 15.0±0.3 12.0±0.213.5MIN. 1. Gate 2. Drain 3. Source MP-45F (ISOLATED TO-220) Body Diode Source Drain Gate PACKAGE DIMENSIONS (in millimeter)

ELECTRICAL CHARACTERISTICS (T A = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS Drain to Source On-Resistance RDS (on) 0.4 0.5 VGS = 10 V 2SK2363 0.5 0.6 ID = 4.0 A 2SK2364 Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, I D = 1 mA Forward Transfer Admittance | yfs | 4.0 VDS = 10 V, I D = 4.0 A Drain Leakage Current IDSS 100 VDS = V DSS, VGS = 0 Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, V DS = 0 Input Capacitance Ciss 1600 VDS = 10 V Output Capacitance Coss 310 VGS = 0 Reverse Transfer Capacitance Crss 30 f = 1 MHz Turn-On Delay Time td (on) 20 ID = 4.0 A Rise Time tr 13 VGS = 10 V Turn-Off Delay Time td (off) 83 VDD = 150 V Fall Time tf 16 RG = 10 Ω RL = 37.5 Ω Total Gate Charge QG 42 ID = 8 A Gate to Source Charge QGS 10 VDD = 400 V Gate to Drain Charge QGD 20 VGS = 10 V Body Diode Forward Voltage VF (S-D) 1.0 IF = 8 A, V GS = 0 Reverse Recovery Time trr 350 IF = 8 A, V GS = 0 Reverse Recovery Charge Q rr 1.5 di/dt = 50 A/ µs UNIT Ω Ω V S µA nA pF pF pF ns ns ns ns nC nC nC V ns µC The application circuits and their parameters are for references only and are not intended for use in actual design-in's. Test Circuit 3 Gate Charge VGS = 20 - 0 V PG RG = 25 Ω 50 Ω D.U.T. L VDD Test Circuit 1 Avalanche Capability PG. RG = 10 Ω D.U.T. RL VDD Test Circuit 2 Switching Time RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS t = 1us Duty Cycle ≤ 1 % VGS Wave Form ID Wave Form VGS ID 10 % 10 % 90 % 90 % 90 % 10 % VGS (on) ID ton toff td (on) tr td (off) tft

TYPICAL CHARACTERISTICS (T A = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 20 140 160 100 TC - Case Temperature - ˚C dT - Percentage of Rated Power - % DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A FORWARD BIAS SAFE OPERATING AREA 10 100 1 000 100 VDS - Drain to Source Voltage - V ID - Drain Current - A 41 6 81 2 1.0 0.1 6040 80 100 120 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 20 140 160 TC - Case Temperature - ˚C PT - Total Power Dissipation - W 6040 80 100 120 DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 51 0 1 5 100 VGS - Gate to Source Voltage - V ID - Drain Current - A 0.1 Pulsed VGS = 20 V 10 V 8 V 6 V TC = 25 ˚C Single Pulse 100 s 1 ms 10 ms 100 ms PW = 10 s Power Dissipation Limited RDS (on) Limited (at V GS = 10 V) ID (pulse) Pulsed TA = 125 ˚C 75 ˚C 25 ˚C –25 ˚C ID (DC) µ µ

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth (ch-c) (t) - Transient Thermal Resistance - C/W 1 000 100 0.1 0.01 0.001 10u 100 u 1 m 10 m 100 m 1 10 100 1 000 Tc = 25 ˚C Single Pulse Rth (ch-a) = 62.5 ˚C/W Rth (ch-c) = 3.75 ˚C/W VDS = 10 V Pulsed FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1.0 10 100 100 I D - Drain Current - A | yfs | - Forward Transfer Admittance - S TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 10 20 30 1.5 V GS - Gate to Source Voltage - V RDS (on) - Drain to Source On-State Resistance - W GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - C VGS (off) - Gate to Source Cutoff Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.0 10 100 ID - Drain Current - A RDS (on) - Drain to Source on-State Resistance - Ω Pulsed ID = 10 A 5 A 2.5 A –50 0 50 100 150 4.0 3.0 2.0 1.0 0.1 1.0 1.0 0.5 1.0 2.0 Pulsed VGS = 10 V

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Qg - Gate Charge - nC VDS - Drain to Source Voltage - V 0 1 02 03 04 0 400 300 200 100 Tch - Channel Temperature - C RDS (on) - Drain to Source On-State Resistance - Ω –50 0 50 100 150 1.5 1.0 0.5 REVERSE RECOVERY TIME vs. DRAIN CURRENT 1.0 10 100 ID - Drain Current - A trr - Reverse Recovery Time - ns 1 000 0.1 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V ID = 10 A VDD = 400 V 250 V 125 V VGS VDS di/dt = 50 A/us V GS = 0 SOURCE TO DRAIN DIODE FORWARD VOLTAGE V SD - Source to Drain Voltage - V ISD - Diode Forward Current - A 1.5 100 1.0 0.1 1.00.50 Pulsed VGS = 10 V VGS = 0 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 100 1 000 10 000 VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF 1 000 100 VGS = 0 f = 1 MHz Ciss Coss Crss 1.0 10 100 1 000 ID - Drain Current - A td (on), tr, td (of), tf - Switching Time - ns 100 0.1 1.0 VDS = 150 V VGS = 10 V RG = 10 Ω SWITCHING CHARACTERISTICS tr tf td (on) td (off) VGS = 10 V ID = 10 A 5 A

1.0 m 10 m 100 m L - Inductive load - H IAS - Single Avalanche current - A 1.0 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD RG = 25 Ω VDD = 150 V VGS = 20 V → 0 Starting Tch = 25 ˚C IAS = 8 A EAS = 320 mJ Starting Tch-Starting Channel Temperature - ˚C EAS - Single Avalanche Energy - mJ 25 50 75 125 150 100 SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE 400 300 200 100 320 mJ ID (peak) = IAS RG = 25 Ω VGS = 20 V → 0 V VDD = 150 V 100 µ

Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

[MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard : Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special : Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific : Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11