2SK2353 NEC | Alldatasheet

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Technical content

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION

The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis- tor designed for high voltage switching applications.

FEATURES

  • Low On-Resistance 2SK2353: R DS(on) = 1.4 Ω (VGS = 10 V, I D = 2.5 A) 2SK2354: R DS(on) = 1.5 Ω (VGS = 10 V, I D = 2.5 A)
  • Low Ciss C iss = 670 pF TYP.
  • High Avalanche Capability Ratings
  • Isolate TO-220 Package QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C) Drain to Source Voltage (2SK2353/2354) V DSS 450/500 V Gate to Source Voltage V GSS ±30 V Drain Current (DC) I D(DC) ±4.5 A Drain Current (pulse) * ID(pulse) ±18 A Total Power Dissipation (T c = 25 ˚C) P T1 30 W Total Power Dissipation (T a = 25 ˚C) P T2 2.0 W Channel Temperature T ch 150 ˚C Storage Temperature T stg –55 to +150 ˚C Single Avalanche Current IAS 4.5 A Single Avalanche Energy EAS 17.4 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting T ch = 25 ˚C, RG = 25 Ω , VGS = 20 V → 0 2SK2353/2SK2354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE The information in this document is subject to change without notice. © 1994 DATA SHEET Document No. TC-2499 (O. D. No. TC-8047) Date Published November 1994 P Printed in Japan 10.0 ±0.3. 0.7 ±0.1 2.7 ±0.2 4.5 ±0.2 15.0 ±0.3 3.2 ±0.2 2.5 ±0.1 0.65 ±0.1 1.3 ±0.2 1.5 ±0.2 2.542.54 3 ±0.1 12.0 ±0.213.5 MIN. 4 ±0.2 1. Gate 2. Drain 3. Source Drain Body DiodeGate Source 123 PACKAGE DIMENSIONS (in millimeters) MP-45F (ISOLATED TO-220)

ELECTRICAL CHARACTERISTICS (T A = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS Drain to Source On-Resistance RDS(on) 1.0 1.4 VGS = 10 V 2SK2353 1.1 1.5 ID = 2.5 A 2SK2354 Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 VDS = 10 V, I D = 1 mA Forward Transfer Admittance | yfs | 1.0 VDS = 10 V, I D = 2.5 A Drain Leakage Current IDSS 100 VDS = V DSS, VGS = 0 Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, V DS = 0 Input Capacitance Ciss 670 VDS = 10 V Output Capacitance Coss 140 VGS = 0 Reverse Transfer Capacitance Crss 18 f = 1 MHz Turn-On Delay Time td(on) 11 ID = 2.5 A Rise Time tr 8 VGS(on) = 10 V Turn-Off Delay Time td(off) 40 VDD = 150 V Fall Time tf 8 RG = 10 Ω RL = 60 Ω Total Gate Charge QG 20 ID = 4.5 A Gate to Source Charge QGS 4.5 VDD = 400 V Gate to Drain Charge QGD 9 VGS = 10 V Body Diode Forward Voltage VF(S-D) 1.0 IF = 4.5 A, V GS = 0 Reverse Recovery Time trr 270 IF = 4.5 A, V GS = 0 Reverse Recovery Charge Q rr 1.0 di/dt = 50 A/ µs Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time VDD LRG = 25 Ω 50 ΩPG VGS = 20 - 0 V RG RG = 10 Ω D.U.T. RL VDDPG. t VGS t = 1 s Duty Cycle ≤ 1 % VGS Wave Form ID Wave Form ID 10 % 10 % 90 % 90 % 10 % 90 % ID VGS (on) td (off)td (on) ton toff tftr VGS µ VDD BVDSS IAS ID VDS Starting Tch D.U.T. Test Circuit 3 Gate Charge D.U.T. RL VDD50 Ω IG = 2 mA PG. UNIT Ω V S µA nA pF pF pF ns ns ns ns nC nC nC V ns nC The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

TYPICAL CHARACTERISTICS (T A = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 40 60 100 120 140 160 100 Tc - Case Temperature - ˚C dT - Percentage of Rated Power - % 02 0 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 20 40 60 80 100 120 140 160 Tc - Case Temperature - ˚C PT - Total Power Dissipation - W DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 0 4 8 12 16 VDS - Drain to Source Voltage - V ID - Drain Current - A FORWARD BIAS SAFE OPERATING AREA 100 0.1 10 100 1000 VDS - Drain to Source Voltage - V ID - Drain Current - A 1.0 Power Dissipation Limited10 ms RDS (on) Limited (at V GS = 10 V) ID (DC) ID (pulse) 100 s Tc = 25 ˚C Single Pulse PW = 10 s Pulsed DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V Ta = –25 ˚C 25 ˚C 75 ˚C Pulsed 0.05 0.1 ID - Drain Current - A µ µ 2SK2353 2SK2354 VGS = 20 V 125 ˚C 51 0 1 5 100 ms 1ms 10 V 8 V VGS = 6 V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 0.1 10 100 1 m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s rth(ch-c) (t) - Transient Thermal Resistance - ˚C/W RDS(on) - Drain to Source On-State Resistance - Ω 3.0 2.0 DRAIN TO SOURCE ON-STATE RESITANCE vs. DRAIN CURRENT 0.1 10 ID - Drain Current - A VGS(off) - Gate to Source Cutoff Voltage - V 1.0 –50 0 50 100 150 Tch - Channel Temperature - ˚C GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed Tc = 25 ˚C Single Pulse FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 1.0 IyfsI - Forward Transfer Admittance - S ID - Drain Current - A 0.1 DRAIM TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 20 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω Pulsed 300 µµ ID = 2.5 A 1001.0 2.0 3.0

4.0 VDS = 10 V

ID = 1 mA 1.0 Ta = –25 ˚C 25 ˚C 75 ˚C 125 ˚C VDS = 10 V Pulsed 0.01 Rth(ch-c) = 4.17 ˚C/W Rth(ch-c) = 62.5 ˚C/W ID = 5 A ID = 1 A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 VGS = 10 V Tch - Channel Temperature - ˚C RDS(on) - Drain to Source On-State Resistance - Ω SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1.0 0.5 0.1 1.5 VSD - Source to Drain Voltage - V ISD - Diode Forward Current - A SWITCHING CHARACTERISTICS 500 100 1.0 td(on), tr, td(off), tf - Switching Time - ns 0.1 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 500 0.1 10 100 trr - Reverse Recovery Diode - ns ID - Drain Current - A 0 5 10 15 20 400 300 200 100 VDS VGS ID = 4.5 A VDS - Drain to Source Voltage - V Qg - Gate Charge - nC VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS Pulsed di/dt = 50 A/ns VGS = 0 VDD = 100 V VGS = 10 V RG = 25 Ω CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 000 100 5 1 100 1000 VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF VGS = 0 f = 1.0 MHz tf td(off) td(on) ID = 2 A 1.00 0.05 5 000 Ciss Crss VDD = 400 V 250 V 125 V 1.0 200 100 1.0 10 0.5 ID = 4 A

10 V VGS = 0

SINGLE AVALANCHE CURRENT vs INDUCTIVE LOAD 100 1.0 100 1.0 m 10 m 100 m IAS - Single Avalanche Current - A SINGLE AVALANCHE ENERGY vs STARTING CHANNEL TEMPERATURE EAS - Single Avalanche Energy - mJ 50 75 100 125 ID(peak) = IAS RG = 25 Ω VGS = 20 V → 0 V VDD = 150 V IAS = 4.5 A EAS = 17.4 mJ µ150 175 EAS = 17.4 mJ RG = 25 Ω VDD = 150 V VGS = 20 V → 0 Starting Tch = 25˚C L - Inductive Load - HStarting Tch - Starting Channel Temperature - ˚C 0 0.1

Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard : Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 [MEMO]