2SK2350 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSV) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm
APPLICATIONS
$3202 27802 He @ Low Drain-Source ON Resistance: Rpg (ON)=0.2602 (Typ.) vel ale © High Forward Transfer Admittance : [Y.|=8S (Typ.) | | || 2 © Low Leakage Current : Ipgg=100A (Max.) (Vpg=200V) ° “Os I 4 2 4 e@ Enhancement-Mode — : Vth=1.5~3.5V (Vpg=10V, Ip=1mA) | 2 0750.15 bd MAXIMUM RATINGS (Ta = 25°C) V a CHARACTERISTIC SYMBOL UNIT o «| Drain-Source Voltage Vpss. rae Drain-Gate Voltage (Rgg=20k0) VpGR 3 ? f Gate Source Voltage Vass care +B) Drain Power Dissipation(Te=25°C) [| Pp | 30s |W JEDEC =- Single Pulse Avalanche Bnergy'* IAI Seat TOSHIBA 2-10R1B Channel Temperature Weight : 1.9 Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case Thermal Resistance, Channel to Ambient Rth (ch-a) Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=50V, Starting T,,=25°C, L=2.47mH, RG=250, IAR=8.5A This transistor is an electrostatic sensitive device. Please handle with caution. 26100 1EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to thei inherent electrical sensitivity and. vulnerability to physical stress. it's the responsibilty of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook © ‘he information contained herein is presented only as a guide for the applications of our products. No_ responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-11-12 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Igss Vas=+t16V, Vpg=0V | — | — | +10] yA | Drain Cut-off Current Ipss Vps=200V, Vag=0V [| — | — | 100] pA | Gate-Source Breakdown. _ _ a Fanos orns Yosef [= [- [¥ Gate Threshold Voltage Vps=10V, Ip=1mA [15] — | 35] v | Drain-Source ON Resistance _| RpS(ON) | VGS=10V, Ip=5A | — | 0.26] 04] 0 | Forward Transfer Admittance | |Yfs| Vps=10V, Ip=5A [ 4] 8] —]|s | Input Capacitance =| 700] =] Reverse Transfer Capacitance ses Te Vas=ev [— [80f — | oF Output Capacitance [= 20 ov a |= | | -| Ves wl Vout Turn-on Time RL= Switching [roman tine | tn | 3 200 [=| | -| ‘ 4 a sce Vpp=100V . VIN : tr, tp<5ns, Turn-off Time toff Duty <1%, ty=10ps 70 Total Gate Charge (Gate- Q 7 Source Plus Gate-Drain) s Vpp=160V, Vgg=10V c Gate-Source Charge LQ | tp=10a [=| =|” Gate-Drain (“Miller”) Charge [— | 7] — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION fet | toe | = | =] ef Current Palse Drain Reverse Current | Ipgp [| —s— —SC—SS | = P| Diode Forward Voltage VDSF IpR=10A, Vgg=0V | — | — [-20] v_ | Reverse Recovery Time Ipp=10A, Vos=ov (| = | 150 | — | as | Reverse Recovery Charge [ Qr | dIpR/dt=100A/ us | — [ 08] — | xc | MARKING za * Lot Number K2350 TYPE h ing fi ‘Alphabet A) [ ao Month (Starting from Alphabet A) NU Year (Last Number of the Christian Era) 1998-11-12 2/5
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ol Rps(on) ~ Te 100 JR = Vps___ Tee HHS: Je Eee Byron | TT | | TT 2 0 tac t+ ee PF os = Fi 5 Hves=10v 5} pH ASA | ESe7i rt 2 | Doerr TT Bod Pf a Lim tT Tye t yy zo WA ber, Atitt ttt itt | ft | = WALT TT Te ii tit | Ce a a CT CASE TEMPERATURE Te (°C) DRAIN-SOURCE VOLTAGE Vpg (V) CAPACITANCE — Vps Vth - Te ee = TLL] common TE] = s Eee) Se Bape gs -LL ff) ON] PERE
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2 SLIUTITI PNT. 2 {PPP Peres BS Ste 2 LETTE TTT re] § of common. | FE = rT] } tee ere yyy yy 30| SOURCE & 1 Voseoy | [CEN e TOP Perr oo ee || TTT a 01 0.3 1 3 10 30 -80 -40 0 40 80 120 160 DRAIN-SOURCE VOLTAGE Vpg (V) CASE TEMPERATURE Te (°C) +o Pp ~ Te soy SHARACTERISTICS s -ELTTT TTT TT s ELE T TT [J comox f . a2 ott i te tt ty 3 setyne} tf =i hy es ee TNT TT | | reese 5 gg | |i i tt tt | sof tl | yy ts
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3 nyt) fACr + 5 ae LT TINE ETT Ty gs (WMA ett tty = 2 ~ tt) IXT tT z “hte et g 2 {tt TP iNet tt 2 {AW ET TT tel & a LTT TTT PX Tt SS 0 40 80 120 160 200 0 8 16 24 32 0 CASE TEMPERATURE Te (°C) TOTAL GATE CHARGE Qg (nC) 1998-11-12 4/5
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0.008)— th tr o.oo3 Tee 10u 1004 im 10m 100m 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA Eas - Teh Se eet SE eS 200) = finuax.) || ENE EE t00e ee 2 teownvous | NN I ~ op _ | i te tt tt
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St ONIN a wo oN | TT TE tT Dicom 0 CRSEEE EE ioe ae 5 * ost Ee re 08)" NONREPETITIVE CUTTING 25 50 15 100 125180 care USE Te=28° atl CHANNEL TEMPERATURE Teh (°C) 0.1] linearly with increase in Vpss MAX. F==4} 05 renee. EEE 05 1 3 5 10 380 50 100 300500 Bypss DRAIN-SOURCE VOLTAGE Vps ) wv [] | TAR, -15V 4 YW Vpp /“ \\|_ vps 4 \\ TEST CIRCUIT WAVE FORM Peak IAR=8.5A, RG=250 1 yp. —Bvpss_ vpp=50v, L=2atmi 48-2"! ypss— Vp? TOTO GTI