2SK2231 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L?-7-MOSV ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm APPLICATIONS se s2202| 3 0.5max e 4V Gate Drive | | E @ Low Drain-Source ON Resistance: Rpg (ON)=0-1202 (Typ.) cosuane 4) : j Z . 3) _|locmax. e@ High Forward Transfer Admittance : |Yfs|=5.0S (Typ.) a if 5 1 @ Low Leakage Current : Ingg=100/A (Max.) (Vpg=60V) i sé © Enhancement-Mode _: Vth =0.8~2.0V (Vpg=10V, Ip=1mA) Hs MAXIMUM RATINGS (Ta = 25°C) i - 1. GATE CHARACTERISTIC SYMBOL 3 BRAIN H - (HEAT SINK) Drain-Source Voltage Vpss_| _ 60. «| V_ dj 3. source 3 Drain-Gate Voltage (RGg=20k0) Vpcr | 60 | V_lyepEc _ GeteSoures Vlg | Vass aay Sui [pein Curent [fap [ar | a Drain Power Dissipation (Te=25°O) | Py | 20 |W] Single Pulse Avalanche Bnergy** may Storage Temperature Range —55~150 osto.s = 5 DasMaX 3 THERMAL CHARACTERISTICS | 2 CHARACTERISTIC SYMBOL UNIT 3 5 Thermal Resistance, Channel To Case | Rth (ch-e) | 6.25 [C7 WI - Thermal Resistance, Channel To Ambient Rth (ch-a) z 1. GATE Note ; 2. DRAIN : * Repetitive rating ; Pulse Width Limited by Max. (HEAT SINK) junction temperature. 3._SOURCE 2 ** Vpp =25V, Starting Toh =25°C, L=7mH, Rg=250, TAR=5A EIAJ SC-64 This transistor is an electrostatic sensitive device. TOSHIBA 2-7B2B Please handle with caution. Weight : 0.36g 961001E4A2 @ TOSHIBA is continually working to improve the quality and the reliability of its products, Nevertheless, semiconductor devices in general can maltunction or ‘all due to their inherent electrical Sensivty and vulnerability to physical stress. It is the responsibilty of the buyer, when lizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of @ TOSHIBA product could cause lost of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein 's presented only as 2 guide for the applications of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION of others. @ The information contained herein is subject to change without notice 1998-11-12 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) cHanacrenistic | syMBow | TEST CONDITION Cate Leakage Current Tagg [Vag=216V, Vpg=0v L— = [210 [pa Drain Cut-off Current Ipss Vps=60V, Vag=0V [| — | — | 100] pA | Drain-Source Breakdown _ _ Paseo Knnalinciin vow | @[-[- | Gate Threshold Voltage Vps=10V, Ip=1mA [os | — | 20] Vv | Drain-Source ON Resistance |RDS (ON) a V@s=10V, Ip=2.5A | — | o12 | ore | Forward Transfer _ _ ‘Admittance [Yrs] | Vpg=10V, Ip=2.5A | 29 | 5.0 | - | iS Tnput Capacitance [= pao — | Reverse Transfer Cc Vps=10V, Vgg=0V F Capacitance TSS f=1MHz Pp. Output Capacitance [=o | ‘ ‘ Ip=2.5A ves FL ep svous, = | | = | GS oy Turn-on Time RL= 25 Switching S 120 Time . 6 Fall Time te 55 Vpp=30V . VIN : tr, t¢<5ns, Turn-off Time | togf Duty <1%, tw=10/s 170 Total Gate Charge (Gate- Q 12 Source Plus Gate-Drain) 8 Vpp=48V, Vag=10V Gate-Source Charge [Qs |tp=5a [=[ sf | °° Gate-Drain Miller") Change C= T=] SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION fret | oe |= IF 5 A Current Pulse Drain Reverse Coment| Ipap [| — | = | [a] Diode Forward Voltage VpsF__|IpR=5A, Vgg=0V [| — | — [-17[ v | Reverse Recovery Time IpR=5A, Vos=0V L— [mo | — [as | Reverse Recovery Charge dIpR/dt=50A / us [| — [ 01 | — [ xc | MARKING * Lot Number K2231-+—TYPE ; [ [J Month (Starting from Alphabet A) NUY Year (Last Number of the Christian Era) 1998-11-12 2/5
A ee [| source “oN CEES new ye fr | Te na i t+} faa 3 [== oo
5 MON i] al [33 | “ 12] | mn
source 7m a é fe 4] fave a | : | SEESEEeRe < i — 5 I —> BV 2 in Sanne F] 4 pt * g We aa im at © e LY —T | | [| aa TAGE Vps a {Wo rt Vas=25¥ of URCE VoL! S i | | Re DRAIN-SO z Y_| LT | LL , ~ vos 3 wy Y | [| : 2 Vos SOURCE 5 -— i Cl Common | aan woe voutage Vos 70 Lt | * [i] ty | PRA - vas oN = EARS Ip [| com fy Ne [| fs SOUR EEE sae’ : SESS “TI =e | 2 Cam [ts | oon on +} ASSET = > -CARE Poe TNS mn] 2 7] i Ci 27 pe 8 poy pp 2 os HESS 17% Be Fete CT pp a MA [| | Games Ip z IM - HT] z ee aeeee ° oar il Ej |W n 3 Vos erat _ 5 VOLTAGE Vg TT YT rit | a Tae LH “Ti, ee a Prt | roy nill = gs CH TT | sass z =e cg aS sounee z Beis aie 82 EEE cowno : HH 7 = Fat como | s eZ if I Z “AH Ss es ee I | . ool 1 conse pe é alll SS ° Dra 8 = 30 = o4 Biicinemas 10 z i 3 6 » z oR RRENT Ip ( 2 3/5 03 0 DRAIN CUI 1998-11-1
oa Rps (ON) - Te 20 IDR = _ Ti ; Bea 2 13 8 a on i a >) A | i “TL Ae Be os JF 2/240 ieee az |v Lary 7 HE Ab vos-0 -w = La Ts 2 af A
3 On —- <4 ° = a 2
e [lawl ll | 2 TT TT cosies “ titi titty itty 2 PIA | | | eve {5 aa 0 a TT CASE TEMPERATURE Te (°C) DRAIN-SOURCE VOLTAGE Vpg (V) CAPACITANCE - Vpg os Vth — Te a a | = “TT 71111 leoumow source NE PT oe ° 500 SSE Cia HH g PN ee a & a 8 oo sl 8 TOLLE LE SAL ol LIU SSIITTN. lll zo PEP TTT | Sf] common source FH Set Pett} itt TP ia pase CO Past e LETT PTT rrr yt | ole EN ce Sx avs 1810 a0 60100 25-8 200 DRAIN-SOURCE VOLTAGE Vpg (V) CASE TEMPERATURE Te (°C) DYNAMIC INPUT/OUTPUT
0 Pp ~ Te +0 CHARACTERISTICS to
£ Y\\ |, « ee Bf | AW 8 e LITT TTT I ty 3 Lf | Avon | | a z bs 7 I | SR 2 NTT TT 5 | Yy\\ i lit . PLENTY RUZ Pome | 2 {LTT TN TTY 2 LAA Free] toms a Litt tT NIT e PSA % 40 80 120 160 200 % 5 10 15 20 CASE TEMPERATURE Te (°C) TOTAL GATE CHARGE Qe (nC) 1998-11-12 4/5
Tth — tw 3 3 on on ooo 3 °F yng PEERS ESE eee ame Be Duw=05 a 2 g 05] - a cate ee aie esta eee Ee os Fos Ce a | aS Se a ed Le eee 5) ee FH He ag er SINGLE PULSE [{{TI TUTTI TT ro LL. Se yo Leech tot IIT VT T 22 O° BESS 0.02 SS SS SSS far | $5 0.005 FFF Te tt 2 9.003} HH 0-1 Duty=t/T $ FA EO Ran y= 6.25°C/ 8 oonyL ELLUM CTT TEIN TTT Ou 100u im 10m, 100m 1 10 100 PULSE WIDTH tw (s) SAFE OPERATING AREA E, = T 30 200) ‘AS ch | . -EE TT TTT et PeermIN@NIP 3 EEEEEEEEES ok tN oe - Pera ELEY ~ wd | | tt tt tt s 4 COIN tm SE 2 INT TTT TTT | a } J —TN GEN NO s ‘ NI
2 J PONG NG TINTH a oN
DCm NON): -EEERRSEEE o Te=25°C Be NN e LTT] PNET TY gs —oeee ate ASS ott | | | Pee Sf Ht NH a a a CT
2 SINGLE NONREPETITIVE NH CHANNEL TEMPERATURE Teh (°C)
0.3 PULSE Tc=25°C meni
linearly with increase in Voss Bypss temperetre, was ory rT) 3060 100 15V fl TAR, DRAIN-SOURCE VOLTAGE Vps (V) —15V 4 Y N oul Vpp /’ \\|_ vps TEST CIRCUIT WAVE FORM Peak IAR=5A, RG=250 —1 op. —BvDss_ Vpp=25V, L=7mH Bas=g LP ‘Bypss-Vpp) TT «*O“NB-T I-12 O55