2SK2185 SHINDENGEN | Alldatasheet
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Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd OUTLINE DIMENSIONS RATINGS (F5F50VX2) 500V5A Case : E-pack VX-2 Series Power MOSFET N-Channel Enhancement type (Unit : mm)Case : FTO-220 Switching power supply of AC 100V input High voltage power supply Inverter APPLICATION Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.
FEATURES
Absolute Maximum Ratings iTc = 25j Item Symbol Conditions RatingsUnit Storage Temperature Tstg -55\`150 Channel Temperature Tch 150 Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS }30 Continuous Drain CurrentiDCjID 5 Continuous Drain CurrentiPeak)IDP 15 A Continuous Source CurrentiDCjIS 5 Total Power DissipationPT 30 W Single Pulse Avalanche CurrentIAS Tch = 25 5 A Dielectric Strength uTerminals to case, AC 1 minute2 u Mounting Torque snqi Recommended torque : 0.3N¥m j0.5 mE
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2185 ( F5F50VX2 )VX-2 Series Power MOSFET
- Electrical Characteristics Tc = 25℃ Item Symbol Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS ID = 1mA, VGS = 0V 500 V Zero Gate Voltage Drain Current IDSS VDS = 500V, VGS = 0V 250 μA Gate-Source Leakage Current IGSS VGS = ±30V, VDS = 0V ±0.1 Forward Tranｓconductance gfs ID = 2.5A, VDS = 10V 1.5 3.8 S Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 2.5A, VGS = 10V 1.11 .5 Ω Gate Threshold Voltage VTH ID = 1mA, VDS = 10V 2.5 3.0 3.5 V Source-Drain Diode Forwade Voltage VSD IS = 2.5A, VGS = 0V 1.5 Theｒmal Resistance θjc junction to case 4.17 ℃/Ｗ Total Gate Charge Qg VDD = 400V, VGS = 10V, ID = 5A 21 nC Input Capacitance Ciss 580 Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1MHZ 45 pF Output Capacitance Coss 140 Turn-On Time ton ID = 2.5A, VGS = 10V, RL = 60Ω 55 90 ns Turn-Off Time toff 110 170
2SK2185 Transfer Characteristics VDS = 25V pulse test TYP Tc = −55°C 25°C 100°C 150°C Gate-Source Voltage V GS [V] Drain Current I D [A]
Static Drain-Source On-state Resistance 0.1 -50 0 50 100 150 2SK2185 VGS = 10V pulse test TYP ID = 2.5A Case Temperature Tc [ °C] Static Drain-Source On-state Resistance R DS(ON) [Ω ]
-50 0 50 100 150 2SK2185 VDS = 10V ID = 1mA TYP Case Temperature Tc [ °C] Gate Threshold Voltage V TH [V]
0.01 0.1 100 1 10 100 1000 2SK2185 100µs Tc = 25°C Single Pulse 200µs 1ms 10ms DC Drain-Source Voltage V DS [V] Drain Current I D [A] RDS(ON) limit
0.01 0.1 100 2SK2185 10-5 10-4 10-3 10-2 10-1 100 101 102 Transient Thermal Impedance Time t [s] Transient Thermal Impedance θjc(t) [°C/W]
0.005 Tc=25°C TYP Ciss Coss Crss Drain-Source Voltage V DS [V] Capacitance Ciss Coss Crss [pF]
Power Derating [%] Case Temperature Tc [ °C]
Gate Charge Characteristics ID = 5A 100V VDD = 400V VGS VDS Gate Charge Qg [nC] Drain-Source Voltage V DS [V] Gate-Source Voltage V GS [V]