K2150

2SK2150 TOSHIBA | Alldatasheet

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TOSHIBA 327 2iUd SEMICONDUCTOR TECHNICAL DATA TE EEE Oe ee TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (x - MOS IV) . HIGH SPEED. HIGH CURRENT SHITHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR UNIT in om DRIVE APPLICATIONS. 15.9MAX” + 0.2 af Za + Low Drain-Source ON Resistance : RDS(ON)*0. 29Q (Typ.) 7 a 2 4 3 + High Forward Transfer Admittance : | Yfs|= 14S (Iyp.) 3 Senn a] o as + Low Leakage Current : IDSS= 100A (Max.) (VDS= 500V) ror y 3 20203 fil | + Enhancement-Vode ©: Vth= 2.0 ~ 4.0V (VDS= 10V, ID= ImA) +03 Fi 1o-o2s Rf Gf s $45402 5.45202 al | aL Lal =| oq ri WAKIVUM RATINGS (Ta= 25 °C) 3 1. GATE CHARACTERISTIC RATING 2. DRAIN (HEAT SINK) 3. SOURCE Drain-Gate Voltage (RGS=20KQ) [ vor | 00 | v | EIA SC.65

7 TOSHIBA _2-16C1B

Gate-Source Voltage [voss | +30 | v | Weight : 4.6g Drain Current ei ip fsa aaet [Pulse [roe [60 a | Drain Power Dissipation (To-25%) [PD | 150 | w | Channel Temperature [Ta [so | | Storage Temperature Range -55~150 THERMAL CHARACTERISTICS , CHARACERISTIC [-svwpon fw. [uni Thermal Resistance, Channel To Case | Rth(ch-c) | 0.833 | oa | Thermal Resistance, Channel to Ambient | Rth(ch-a) | 0 | ca | THIS TRANSISTOR IS AN ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. © The information contained herein is presented only as a guide for the applications of our products. No responsibilitf is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or ther ights of TOSHIBA or others. TOSHIBA CORPORATION 20 . ne EEERREemeEenetiill

q SEMICONDUCTOR TECHNICAL DATA 2SK2150 TO Ss H I BA SLECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC [symp [Test conprryon | wan. | Typ. | wax. | uni | Gate Leakage Current [toss | voss 25, vos ov | — | = | +10 | uA | GaterSource Breakdom Voltage | Vi(pr)Gss | TG- t100ua, vos- ov | +30 | - | - | | Drain Cut-off Current [toss | vos- so, vas ov | - | = | 100 | HA | Drain-Source Breakdom Voltage | V(BR)DSS | ID= 10m, vos ov | _ 500 [| - [| - [ v_| Gate Threshold Voltage [ven | vos= ov, TD ima | 0 | | 40 | Vv | Drain-Source ON Resistance | RDS(ON) | VGS« tov, Th 7A | — | 0.29 | 040 | 2 | ’ Forvard Transfer Adwittance [| Yfs{ | vos tov, th 7s | | | oa | = [Ss | Tt Cacia view vex 0 =] jeere Trrser Coal Nera [=| aw |=] oF Output. Capacitance | = [730] = | seithine Ti ve wll GTi 3. L- [| 5] = | ae ope el 4 : Vinitr,tt< Sos ‘Vpn: 2lov i Gate Source Charge Paes] VO sr. vase Peers ac} he i qi i SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25°C) GHMRACTERISTIC [smo | __test conprrmow | win. | ror. | wae. | oor | Continuous Drain Reverse Current | TpR | = | = | = | TA | [Pulse Drain Reverse Current [ro | = | ~ | - | oof a | ‘Diode Foward Voltage [vos | toe isa, ves | - | - [art iv | Reverse Recovery Tine ames, vee = | ~ | a | - | ns | Reverse Recovery Charge d IDR t= 1004/uS | - [sa] - [uc | \\ ; i i . Iw. 21 >i ah

TO SH I BA 2SK2150 SEMICONDUCTOR TECHNICAL DATA OO SS e ee my Pt Ti] ID-VDS = . FPeeeeAL a pen eens g Pee 3 HH -, WZ Pretty. euL ft iti tT Te ELLE Fe oe s freee ey 3 a ee a) 2S z eee 2.-4~lt Titty ze Ut TT Pitt Try ,

8 TFT TT ET TTT |

j rt? ttt DRAIN-SOURCE VOLTAGE VDS (Vv) DRAIN-SOURCE VOLTAGE VDs (Vv) o—= ID-VGS : : YDS-VGS Pe 2 ee Oe ee 2 es Sy ee o pe

0 SS eee S —

o 8 re oo! pa eS *o 2 «a 6 8 10 3 *O = 7 . F 2 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (Vv)

8 RDS (ON) -ID : Fy Fi RDS (ON) -Te °

Sz egg is Ses MUL 225 se EisksG ens = ee Ae ! HESS es SERRE 3 Gamoet Ce rapee se eee = aa 305 °~«0 0 100 i: o” Biceesjesn ose ences S DRAIN CURRENT 1D (A) z 0 PE eee ’ a -80 40 0 ) 80 120 160 _ ‘ CASE TEMPERATURE Te (TC) a 22 :

SEMICONDUCTOR TECHNICAL DATA 2SK2150 IBA Be S ’ : 2» Wte-1D 2 wm 1DR-VDs e g foe es = 2 » [- e S] « Ete csmiimun oss emres epson aa we § mmae fee Shoe 2) SS Se <= 3 LAA Fe . — a eS Fae . a 5 a ‘4 03.05 1 305° 30 Siege Ss 3 z 1 bod ~ . = 0 oa 08-12 “L620 a e DRAIN-SOURCE VOLTAGE VDs (v) CAPACITANCE -VDS 10000 pS] . Se s 5 Vth-Te Op a Che a z SSS see= 454 < Ae Fs MAES AS SS ==. es SS SS Se & Fee ee ee o SSS |

8 SSeS SS SS 2 3’ BESS

Se ee eee me Sg es aE SE ee es ee | % | conan soars — Habart] = Pee Pee ee | wy Hees é& o “0 0 «0 oo 1 16 al a3 1 3 10 c 100 < DRAIN-SOURCE VOLTAGE VDS (Vv) CASE TEMPERATURE Te (TC) z PD-Te ° “a eee = . 5 2° = eee Py SS SS Se Fn = = | = 2) = Se - : z : z a 0 40 oO 120 160 200 . aa CASE TEMPERATURE Te (C) : - - i 23

TOSHIBA 2SK2150 SEMICONDUCTOR TECHNICAL DATA eee ee Owe

2 Tth — tw

2 {LU TT TTT res oer os Sa pe Cena EA east eet ae watt ee oa 3 sodeoctreme rowse (TUTTI TTT TTT DF SS ee Pa yn0sstc/W doostat EEE — FE (ore) 10. 1100p im 10m 100m 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA

100 SSS =a

TD MAX, (PULSED) 3 SE D wx oo SEE 2 0 Reese ees S Po SG A = Sa eee & — C55 SS NS 20 == Sa ea: Ramee RigEsts meee ests 0.3 | % SINGLE NONREPETITIVE ===] = , . PULSE Tc= 25°C EiaatiSry CURVES MUST BE DERATED 223203! LINEARY WITH INCREASE ===] SIE 0,1 UIN_TENPERATURE, ae 3 10 30 100 © 300~=—:1000 DRAIN-SOURCE VOLTAGE YDS(V) ee ; 24 é