K2141

2SK2141 NEC | Alldatasheet

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Technical content

MOS FIELD EFFECT TRANSISTOR 2SK2141

DESCRIPTION

The 2SK2141 is N-channel Power MOS Field Effect Transis- tor designed for high voltage switching applications.

FEATURES

• Low On-state Resistance RDS(on) = 1.1 Ω MAX. (V GS = 10 V, I D = 3.0 A)
• LOW Ciss Ciss = 1150 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 (MP-45F) Package ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage V DSS 600 V Gate to Source Voltage V GSS ±30 V Drain Current (DC) I D (DC) ±6.0 A Drain Current (pulse) I D (pulse) * ±24 A Total Power Dissipation (T C = 25 °C) P T1 35 W Total Power Dissipation (T a = 25 °C) P T2 2.0 W Storage Temperature T stg –55 to +150 °C Channel Temperature T ch 150 °C Single Avalanche Current I AS 6.0 A Single Avalanche Energy E AS 12 mJ *PW ≤ 10 µs, Duty Cycle ≤ 1% **Starting T ch = 25 °C, RG = 25 Ω , VGS = 20 V → 0 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. TC-2514 (O.D. No. TC–8073) Date Published January 1995 P Printed in Japan PACKAGE DIMENSIONS (in millimeters) 10.0 ± 0.3 φ3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 1.5 ± 0.2 2.54 TYP. 1.3 ± 0.2 2.54 TYP. 0.7 ± 0.1 4 ± 0.2 15.0 ± 0.3 12.0 ± 0.2 3 ± 0.1 123 1. Gate 2. Drain 3. Source 13.5 MIN. Body diode Source (S) Drain (D) Gate (G) 123 ISOLATED TO-220 (MP-45F) © 1995 DATA SHEET

Test Circuit 1: Avalanche Capability Test Circuit 2: Switching Time Test Circuit 3: Gate Charge The application circuits and their parameters are for references only and are not intended for use in actual design-in's. ELECTRICAL CHARACTERISTICS (T A = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain to Source On-state Resistance RDS(on) 0.8 1.1 Ω VGS = 10 V, I D = 3.0 A Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 V VDS = 10 V, I D = 1 mA Forward Transfer Admittance  yfs  2.0 S VDS = 10 V, I D = 3.0 A Drain Leakage Current IDSS 100 µA VDS = 600V, V GS = 0 Gate to Source Leakage Current IGSS ±100 nA VGS = ±30 V, V DS = 0 Input Capacitance Ciss 1150 pF VDS = 10 V Output Capacitance Coss 260 pF VGS = 0 Reverse Transfer Capacitance Crss 60 pF f = 1 MHz Turn-On Delay Time td(on) 15 ns VGS = 10 V Rise Time tr 15 ns VDD = 150 V Turn-Off Delay Time td(off) 75 ns ID = 3.0 A, R G = 10 Ω Fall Time tf 13 ns RL = 37.5 Ω Total Gate Charge QG 40 nC VGS = 10 V Gate to Source Charge QGS 6.0 nC ID = 6.0 A Gate to Drain Charge QGD 20 nC VDD = 480 V Diode Forward Voltage VF(S-D) 1.0 V IF = 6.0 A, V GS = 0 Reverse Recovery Time trr 370 ns IF = 6.0 A Reverse Recovery Charge Qrr 1.5 µC di/dt = 50 A/ µs VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD PG. RG = 10 Ω D.U.T. RL VDD RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS τ = 1 s Duty Cycle ≤ 1% VGS Wave Form ID Wave Form VGS ID 10 % 10 % 90 % 90 % 90 % 10 % VGS (on) ID ton toff td(on) tr td (off) tfτ µ

TYPICAL CHARACTERISTICS (T A = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 20 140 160 100 TC - Case Temperature - °C dT - Percentage of Rated Power - % DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A FORWARD BIAS SAFE OPERATING AREA 10 100 1 000 100 VDS - Drain to Source Voltage - V ID - Drain Current - A 41 6 81 2 1.0 0.1 6040 80 100 120 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 20 140 160 TC - Case Temperature - °C PT - Total Power Dissipation - W 6040 80 100 120 DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 51 0 100 VGS - Gate to Source Voltage - V ID - Drain Current - A5.0 1.0 Pulsed 1.0 TC = 25 °C Single Pulse RDS (on) Limited (at V GS = 20 V) 100 s 1 ms 10 ms PW = 10 s Power Dissipation Limited ID (pulse) 200 ms 12 V 10 V 8 V VGS = 6 V VDS = 10 V Pulsed Tch = 125 °C 75 °C 25 °C –25 °C ID (DC) µ µ

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth (t) - Transient Thermal Resistance - °C/W 1 000 100 1.0 0.1 0.01 0.001 10 100 1 m 10 m 100 m 1 10 100 1 000 TC = 25 °C Single Pulse Rth (ch-a) = 62.5 °C/W Rth (ch-c) = 3.57 °C/W FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1.0 10 ID - Drain Current - A yfs - Forward Transfer Admittance - S 82 0 16 2.0 VGS - Gate to Source Voltage - V RDS (on) - Drain to Source On-State Resistance - Ω GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - °C VGS (off) - Gate to Source Cutoff Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.0 10 100 0.8 ID - Drain Current - A RDS (on) - Drain to Source On-State Resistance - Ω ID = 6.0 A 3.0 A 1.2 A – 50 0 50 100 150 5.0 4.0 3.0 2.0 1.0 0.1 1.0 1.0 0.4 2.0 0.1 VDS = 10 V Pulsed VDS = 10 V ID = 1 mA 41 2 Pulsed 1.2 1.6 VGS = 10 V 20 V Pulsed Tch = –25 °C 25 °C 75 °C 125 °C µµ

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Qg - Gate Charge - nC VDS - Drain to Source Voltage - V 0 2 04 06 08 0 800 600 400 200 Tch - Channel Temperature - °C RDS (on) - Drain to Source On-State Resistance - Ω –50 0 50 100 150 3.0 2.0 1.0 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1.0 10 100 800 trr - Reverse Recovery Time - ns 600 0.1 400 DYNAMIC INPUT CHARACTERISTICS VGS - Gate to Source Voltage - V VDD = 450 V 300 V 120 V VGS VDS di/dt = 50 A/ s VGS = 10 V SOURCE TO DRAIN DIODE FORWARD VOLTAGE VSD - Source to Drain Voltage - V ISD - Diode Forward Current - A 1.5 1.00.50 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 100 1 000 10 000 VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF 1 000 100 1.0 TC = 25 °C Single Pulse Ciss Coss Crss 1.0 10 100 1 000 ID - Drain Current - A td (on), tr, td (off), tf - Switching Time - ns 100 1.0 SWITCHING CHARACTERISTICS tr tf VGS = 10 V Pulsed ID = 6 A 3 A 1.0 0.1 0.01 Pulsed VGS = 0 VVGS = 10 V VDD = 150 V VGS = 10 V RG = 10 Ω td (on) td (off) ID = ID (DC) 200 Diode Forward Current - A µ

IAS - Single Avalanche Current - A 1.0 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD Starting Tch-Starting Channel Temperature - °C EAS - Single Avalanche Energy - mJ 25 50 75 125 150 100 SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE 100 0.5 RG = 25 Ω VDD = 150 V VGS = 20 V → 0 Starting Tch EAS = 12 mJ IAS = 6.0 A ID (peak = ID (DC) VDD = 150 V µµ

Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037

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