K2131

2SK2131 NEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

DESCRIPTION

The 2SK2131 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS designed for solenoid, motor and lamp driver. 10.3 + 0.3 45402 $3.2 +02 27402 FEATURES S © Low On-state Resistance. o Ea a Roston) S 0.12 Q (Ves = -10 V, lb = 8 A) $i 3 Roston) S 0.20 2 (Ves = -4 V, lo = 8 A) g j 4 © Low Ciss Cis = 1 600 pF TYP. 7 1 | 3/9 © Built-in G-S Gate Protection Diode a QUALITY GRADE Standard Please refer to “Quality grade on NEC Semiconductor _ Devices" (Document number IEI-1209) published by NEC 07+01 Lrs02 065+01 25401 ii ificati i 1.5 + 0.2 Corporation to know the specification of quality grade on 2.54 TYP. le Fe the devices and its recommended applications. 1. Gate ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) 2. Drain Drain to Source Voltage Voss 150 Vv 3. Source Gate to Source Voltage Vess +20 Vv Drain Current (DC) lowe +15 A : Drain Current (pulse) Ipipulse* +60 A Drain(D) Total Power Dissipation (Te = 25 °C) Pri 35 Ww Total Power Dissipation (Ta = 25 °C) Prz 2.0 WwW Channel Temperature Teh 150 °c Gateta) Body Diode Storage Temperature Tstg -55 to +150 °C * PW S 10 us, Duty Cycle S 1% Gate Protection © Source(S) Diode TR Document No. TC-2457 (O.D. No. TC-7953) Date Published August 1993 M Printdin Japan © NEC Corporation 1993

ELECTRICAL CHARACTERISTICS (Ta = 25 °C) Drain to Source Onstato Resistance | Rowcw [| 008] on? | a | Van tovib=BA Drain to Source On-state Resistance [ Rosem | | 042 | 020 | @ | Ves=40V,=8A Gate to Source Cutoff Voltage [| vesom | 10 | | 25 | v | Vos = 10 V, lo= 1mA Forward Transfer Admittance [wt | 0 | | | s | Vos=10V,b=8A Drain Leakage Current [ ws | | | 1 | wa | Vos = 150 V, Ves = 0 Gate to Source Leakage Current [tess | | | #10 | wa | Vos=420V, Vos =0 | risotime Tm ts | veo = 100 Turn-Off Delay Time lo = 8A, Re = 102 [tm ff 200 Tins | 8 ae _ Test Circuit 1: Switching Time pur Ru Ves 20% Voo _ pG(A) Ro= 10a lo 90 % goal [os 7 Vv ot] wall te | te BY ton tott t= 14s Duty Cycle $ 1% Test Circuit 2 : Gate Charge but lo=2mA mR = ie Q | I Voo

TYPICAL CHARACTERISTICS (Ta = 25 °C) ~ DERATING FACTOR OF FORWARD BIAS. TOTAL POWER DISSIPATION vs. SAFE OPERATING AREA 36 CASE TEMPERATURE -{T[ LTTE LINE ETT Ty 100 30 PONCE a -EEN EE é 80 IN 5 % Pt tINT TTT 4 s @ 20 3% ‘ et tttN tt ER ERNESE eee PJ tTTT NT] 2° 5 a £ ett TTT tEAN *LEETTEIN * TEPTT TTX IN IN WL 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tc - Case Temperature - °C Tc - Case Temperature - ‘C DRAIN CURRENT vs. FORWARD BIAS SAFE OPERATING AREA 60 DRAIN TO SOURCE VOLTAGE 100 pS SS = ES ee | EEF Sets EHH pea EE aa isis SRRnaee2. < SE Nah Cs Tn) < | | i AT An a £10 Re aN LL 2g A, gs EEA HS joasctsee soemmeaiiil g f ~ 8 Saar Sy 3 (LiA4 tov aa e ee INOS c 4 YA g 4-H NSN g || Bena » LLU NUNN ETT posts| | a se = 222 nn eesti 2 2 4 FE BS Wi Gnnaaaaa eee F | a 8 iy Bese sed fl CCH PCT AA itt or Single use fT [LTT TT TT A 1 10 100 1000 0 2 4 6 8 10 Vos - Drain to Source Voltage - V Vos - Drain to Source Voltage - V

00 TRANSFER CHARACTERISTICS

1 SSS Sat eS]

=< eee eS SS ee NO | a 2. < FEC Rec é tt TA Most | || SLL LF ee | a ———— 1 | a 2 a a | a a ae) aa 8 Ae ~ "9 2 4 6 8 10 Ves — Gate to Source Voltage - V

L TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

9 SS EE Err on” tt

' a a | _ etait] | epee anne! to Case = a OP | | 3 on LLU TTT TTI TTT TTT TTT) 5 Re 2 am ot 2 cr % oo Con nc tT TTT ease | 10u 100 1m 10m m - PW - Pulse Width -s FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT a 02 GATE TO SOURCE VOLTAGE oe SSS] € CILLI | | peel PERC ver E | gs oe coool 2 TE EE i a 2 015 fA Eg LI TT TT ET : mean N f LINE a 3 okt cpa IN © on NM 8 eee e ri ttt eee g LT an Ty = 0.05 Ce eZ & * Will VM Ul =§ Ee err erry y} ' é 0 10 20 a lo- rain Current - Na mo Ves - Gate to Source Voltage - V _ DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE vs. ¢ 02 RESISTANCE vs. DRAIN CURENT 30, CHANNEL TEMPERATURE e CMT er TT] TS] COUMCTAMICTM =— as —— CoM 2) | | tT § COMIC 0 § LO er ing} Toe Cnr PS

2 CMS Tn 1 Ss

s Come §=68 of | TT Ey Le | | AT i CCU Tr c8 « 0.1 1 10 100 -50 0 50 100 150 ~~ lo - Drain Current - A Ten - Channel Temperature ~ ‘C

~ DRAIN TO SOURCE ON-STATE RESISTANCE vs. SOURCE TO DRAIN DIODE CI ° 2g CHANNEL TEMPERATURE 100 FORWARD VOLTAGE : y S5csscasasaas== 3 0.20 7 wa + Pitter rt tet MCLLLL) 3s a 4 3 es oe oe | gus Ze € hero ey eae 8 ~) || B TT yt TT TAT Try) 6 2 Terry eee PLL LO REECE c -50 0 50 100 150 0 02 04 06 O08 10 12 14 ~ Ten - Channel Temperature - ‘C Vso - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO. SOURCE VOLTAGE SWITCHING CHARACTERISTICS Hh er =O 2 Seite Peed uw a a | Te ay 1 a | "= FooBEtEESSraMe HH] LETHE 8 sooo SCI ee = val 2 100 SSS Sasa Se ee eect asee = 2 SS 8 SESS te 8 [PS SE Cee HECHT = Fee a 1 [TANS rer ean ° ee 7 | 5 ae A | g | | a Zz a | LEU CIT Crna 1 10 100 1000 0.1 1 10 100 Vos - Drain to Source Voltage - V lo - Drain Current -A REVERSE RECOVERY TIME vs.

10 DYNAMIC INPUT CHARACTERISTICS 1000 REVERSE DRAIN CURRENT

TAL see. 7 ptt lol TY tT i eee CO eee = ,-IiT il iI“zA] I 5 sa ener anaes ee ell Peer) Eo a i a FECCCeESa ot LATHE TET — 0 20 40 60 80 100 1 10 100 Qg - Gate Charge - nC le - Diode Forward Current - A

[___Aeptenton noterame dN Safe operating area of Power MOS FET. TEA-1034 Application circuit using Power MOS FET. TEA-1035 Quality control of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. | _mei-t202 | Assembly manual of semiconductors devices. 11-1207 No part of this document may be copied or reproduced in any form or by any means without the prior written wv consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact . our sales people in advance ~ Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc M4 92.6