K20J50D

K20J50D THINKISEMI | Alldatasheet

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Technical content

Features

※ Uninterruptible Power Supply(UPS) LCD Panel Power ※ DC-AC Inverter,Amplifier and SMPS Mechanical Data ※ Case:TO-3P non-isolated package ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As per configuration ※ Mountin g p osition: An y ※ Wei g ht: 6.0 g ram a pp roximatel y Epoxy: UL 94V-0 rate flame retardant Schematic Diagram Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve ESD Capability Improved 100% Avalanche Tested Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V DSS 500 V Gate-source voltage V GSS ±30 V DC (Note 1) I D Drain current Pulse (Note 1) I DP A Drain power dissipation (Tc = 25°C) P D 280 W Single pulse avalanche energy (Note 2) E AS 470 mJ Avalanche current I AR 20 A Repetitive avalanche energy (Note 3) E AR 28 mJ Channel temperature T ch 150 °C Storage temperature range T stg −55 to 150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c) 0.446 °C/W Thermal resistance, channel to ambient R th (ch-a) 50 °C/W

http://www.thinkisemi.com.tw/ Page 2/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd.

Electrical Characteristics

(Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±30 V, V DS = 0 V ⎯ ⎯ ± 1 μA Drain cut-off current I DSS V DS = 500 V, V GS = 0 V ⎯ ⎯ 10 μA Drain-source breakdown voltage V (BR) DSS I D = 10 mA, V GS = 0 V 500 ⎯ ⎯ V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 2.0 ⎯ 4.0 V Drain-source ON-resistance R DS (ON) V GS = 10 V, I D = 10 A ― 0.22 0.27 Ω Forward transfer admittance |Y fs | V DS = 10 V, I D = 10 A 2.4 8.5 ― S Input capacitance C iss ⎯ 2600 ⎯ Reverse transfer capacitance C rss ⎯ 11 ⎯ Output capacitance C oss V DS = 25 V, V GS = 0 V, f = 1 MHz 280 pF Rise time t r Turn-on time t on 100 Fall time t f Switching time Turn-off time t off Duty ≤ 1%, t w = 10 μs ⎯ 150 ns Total gate charge Q g ⎯ 45 ⎯ Gate-source charge Q gs ⎯ 28 ⎯ Gate-drain charge Q gd V DD ≈ 400 V, V GS = 10 V, I D = 20 A ⎯ 17 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) I DR ⎯ ⎯ ⎯ 20 A Pulse drain reverse current (Note 1) I DRP ⎯ ⎯ ⎯ 80 A Forward voltage (diode) V DSF I DR = 20 A, V GS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time t rr ⎯ 1700 ⎯ ns Reverse recovery charge Q rr I DR = 20 A, V GS = 0 V, dI DR /dt = 100 A/μs ⎯ 26 ⎯ μC R L = 20 Ω 0 V 10 V V GS V DD ≈ 200 V I D = 10 A V OUT 50 Ω Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V DD = 90 V, T ch = 25°C (initial), L = 2.0 mH, R G = 25 Ω, I AR = 20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. K20J50D

http://www.thinkisemi.com.tw/ Page 3/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. ソース接地 Tc = 25°C パルス測定 ソース接地 Tc = 25℃ パルス測定 0.1 0.1 1 100 10 100 Tc = −55 °C 0.1 100 0.1 1 100 4 8 12 16 20 ID = 20 A 0 2 4 6 8 Tc = −55 °C 100 0 20 40 50 VGS = 6 V 30 10 7.5 6.5 0 2 4 6 8 10 VGS = 6 V 6.5 7.5 6.7 Common source Tc = 25°C Pulse Test I D – V DS I D – V DS I D – V GS V DS – V GS Common source Tc = 25°C Pulse Test fs | – I D R DS (ON) – I D Drain-source voltage V DS ( V ) Drain current I D ( A ) Drain-source voltage V DS ( V ) Drain current I D ( A ) Gate-source voltage V GS ( V ) Drain current ID (A) Gate-source voltage V GS ( V ) Drain current I D (A) Drain current I D (A) Drain-source ON resistance RDS (ON) ( Ω) Drain-source voltage V DS (V) Forward transfer admittance ⎪Yfs⎪ (S) Common source Tc = 25°C Pulse Test Common source Tc = 25°C Pulse Test Common source VDS = 10 V Pulse Test Common source VDS = 20 V Pulse Test VGS = 10, 15 V K20J50D

http://www.thinkisemi.com.tw/ Page 4/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. VDD = 100 V VDS VGS 400 200 500 400 300 200 100 0 20 40 60 80 −80 −40 0 40 80 120 160 Crss 100 1000 10000 Ciss Coss 0.1 −0.3 100 −0.9 −1.2 VGS = 0 V −1.5−0.6 160 −40 0 40 80 120 −80 ID = 5 A 0.8 0.2 0.4 0.6 V th − Tc R DS (ON) − Tc I DR − V DS P D − Tc Common source Tc = 25°C Pulse Test Common source VGS = 0 V f =1MHz Tc = 25°C Common source VDS = 10 V ID = 1mA Pulse Test Case temperature Tc (°C) Gate threshold voltage V th (V) Case temperature Tc (°C) Total gate charge Q g (nC) Capacitance C (pF) Capacitance – V DS Drain-source voltage V DS (V) Drain-source ON resistance RDS (ON) ( Ω) Case temperature Tc (°C) Drain reverse current I DR (A) Drain-source voltage V DS (V) Drain power dissipation P D (W) Drain-source voltage V DS (V) Dynamic input / output characteristics Gate-source voltage V GS (V) Common source ID = 20 A Tc = 25°C Pulse Test Common source VGS = 10 V Pulse Test 400 0 40 80 120 160 100 200 300 0.1 1 10 100 K20J50D

http://www.thinkisemi.com.tw/ Page 5/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. 0.001 0.01 100 1000100 100 μs * 1 ms * 0.1 1 10 10μ 0.1 100μ 1m 10m 100m 1 10 T PDM t Duty = t/T Rth (ch-c) = 0.446 °C/W Duty=0.5 0.2 0.1 0.05 0.02 0.01 0.01 RG = 25 Ω V DD = 90 V, L = 2.0 mH −⋅ ⋅ ⋅ = VDDBVDSS BVDSS2I L2 1ΕAS Test circuit Wave form I AR B VDSS V DD V DS −15 V V E AS – T ch Channel temperature (initial) T ch (°C) Avalanche energy E AS ( m J ) r th – t w Pulse width t w (s) Normalized transient thermal impedance r th (t) th (ch-c) SINGLE PULSE * Single pulse Tc=25°C Curves must be derated linearly with increase in temperature. ID max (pulse) * ID max (continuous) DC OPERATION Tc = 25°C SAFE OPERATING AREA Drain-source voltage V DS (V) Drain current I D (A) 25 50 75 100 125 150 400 300 200 100 500 VDSS max K20J50D

15.60 ±0.20 4.80 ±0.20 13.60 ±0.20 9.60 ±0.20 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 1.40 ±0.20 ø3.20 ±0.10 3.80 ±0.20 13.90 ±0.20 3.50 ±0.20 16.50 ±0.30 12.76 ±0.20 19.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.50 +0.15 –0.05 0.60 +0.15 –0.05 5.45TYP [5.45 ±0.30 5.45TYP [5.45 ±0.30 TO-3PN-SQ/TO-3PB-SQ http://www.thinkisemi.com.tw/ Page 6/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. K20J50D