K201 KODENSHI | Alldatasheet

Document overview

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Technical content

The K201 has one channel in a 4-pin mini-flat SMD package. The K202 has two channels in a 8-pin mini-flat SMD package. The K204 has four channels in a 16-pin mini-flat SMD package.

FEATURES

  • Mini-flat Package
  • Collector-Emitter Voltage : Min.50V (at IF= ¡¾5mA, VF=5V)

APPLICATIONS

  • AC Signal Input
  • Cordless Phone
  • Programmable Logic Control and a Silicon NPN Phototransistor per a channel.
  • Current Transfer Ratio : 50% Min.
  • Electrical Isolation Voltage : AC3750Vrms K201 • K202 • K204 These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes connected in a reverse-paralled configuration for AC-input
  • Interface between two circuits of difference Potentail DIMENSION (Unit : mm) K201 K202 K204 Orientation Mark 4.4 0.2 2.54 0.25 3.6 0.2 0.4 0.1 0.1 0.1 2.5 0.2 5.2 0.2 7.0 0.5 0.4Min. 0.15 0.05 4.4 0.22.5 0.2 8.7 0.2 Orientation Mark 0.15 0.05 0.4Min. 7.0 0.5 5.2 0.2 2.54 2.54 4.4 0.2 18.8 0.2 Orientation Mark 5.2 0.2 7.0 0.5 0.4Min. 2.5 0.2 0.1 0.12.54 2.54 0.15 0.05 1 2 3 8 6 57 2 3 41 15 13 11 91416 12 10 432 65 7 8

MAXIMUM RATINGS (Ta=25¡É ) *1. Input current with 100µs pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec ELECTRO-OPTICAL CHARACTERISTICS (Ta=25¡É , unless otherwise noted) IF= ¡¾10mA V=0, f=1kHz IC=0.5mA IE=0.1mA IF=0, VCE=24V VCE=0, f=1MHz IF= ¡¾ 5mA, VCE=5V IF= ¡¾ 5mA, IC=1mA V=0, f=1KHz VCE=5V, RL=100§Ù IC=2mA *4. CTR=(IC/IF) X 100 (%) Rise Time Condition CTR1/CTR2 CT BVCEO CTR VCE(SAT) BVECO ICEO CCE 10- Min. Typ. 1.15 V K201 • K202 • K204 Parameter Lead Soldering Temperature*3 Tsol 260 ¡É Unit. 0.4 - §Ù pF Symbol V F Max. 1.30 100 pF V pF V V nA- tr IO 0.15 1011 CIO RH=40~60%, V=500V Capacitance Current Transfer Ratio*4 Collector-Emitter Saturation Voltage Input Output Forward Voltage Capacitance Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Total Power Dissipation P tot 200 mW - 4 Collector Dark Current Input-Output Isolation Resistance Operating Temperature Topr -30~+100 ¡É Storage Temperature Tstg -55~+125 ¡É Input to Output Isolation Voltage*2 Viso AC3750 Vrms Collector Power Dissipation PC 150 mW IC 50 V V mA A 70 mW Output Collector-Emitter Breakdown Voltage BVCEO 50 Emitter-Collector Breakdown Voltage BVECO 6 Unit Input Forward Current IF Peak Forward Current*1 IFP Power Dissipation PD ¡¾50 mA Fall Time tf Parameter Symbol Rating ¡¾1 Collector Current - §Á Coupled Symmetry Ratio Input-Output Capacitance 600- - §Á

K201 • K202 • K204 Ambient Temperature Ta (¡É) Forward Current vs. Ambient Temperature -20 0 20 Forward Current IF (mA) 40 60 10080 Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation PC (mW) -20 100 150 200 250 Ambient Temperature Ta (¡É ) 200 6040 10080 tr Output 90% 10% Waveform tf Switching Time Test Circuit VCC R VIN Input Test Circuit VO RL Collector Current vs. Collector-Emitter Voltage Collector Current IC (mA) 108642 Collector-Emitter Voltage VCE (V) IF=30mA IF=20mA PC(max.) IF=10mA IF=5mA IF=1mA Ta=25¡É Collector Current vs. Ambient Temperature IF=20mA IF=1mA Ambient Temperature Ta (¡É ) -20 0 4020 60 100Collector Current IC (mA) IF=5mA IF=10mA Dark Current ICEO (§Ë) Ambient Temperature Ta (¡É ) 0.001 20 40 8060 100 VCE=24V Dark Current vs. Ambient Temperature 0.01 0.1 Ta=25¡É VCE=5V Collector Current IC (mA) Forward Current IF (mA) 0.1 0.001 0.01 0.1 10 100 Collector Current vs. Forward Current 100 Forward Voltage VF (V) 0.4 Forward Current vs. Forward Voltage Forward Current IF (mA) 100 1.6 Ta=25¡É Ta=70¡É 0.8 Ta=-55¡É 1.2 Response Time vs. Load Resistance Load Resistance RL (§Ú) 500 100 0.1 Response Time tr, tf (¥ìs) 0.1 VCE=5V IC=2mA Ta=25¡É tr 1.0 2.0 tf