K1946-01MR

K1946-01MR VBSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 7

Technical content

www.VBsemi.com K1946-01MR-VB Datasheet N-Channel 60-V (D-S) MOSFET

FEATURES

• 175°C JunctionTemperature
• TrenchFET ®PowerMOSFET
• Materialcategorization: TO-220 FULLPAK D G DSG Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS(TC= 25 °C, unless otherwise noted) Parameter Symbol Limit Unit VGate-SourceVoltage GS ±20 V TC ContinuousDrain Current (TJ=175 °C)b = 25 °C ID TC A =100 °C 50a IPulsedDrain Current DM 200 IContinuousSourceCurrent (Diode Conduction) S 50a IAvalancheCurrent AS 50 SingleAvalancheEnergy(DutyCycle  1 %) EL= 0.1mH AS 125 mJ TC MaximumPower Dissipation = 25 °C PD 136 WTA= 25°C 3b,8.3b, c TJ, TOperatingJunctionandStorage Temperature Range stg - 55 to175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RMaximumJunction-to-Ambienta thJA 15 18t 10 sec °C/WSteadyState 40 50 RMaximumJunction-to-Case thJC 0.85 1.1 Notes: a.Packagelimited. b.Surfacemountedon 1"x1"FR4board. c.t 10s. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.010atV GS = 10V 70 0.012atV GS =4.5V 55 g

www.VBsemi.com SPECIFICATIONS (TJ= 25 °C, unless otherwisenoted) Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static VDrain-SourceBreakdown Voltage DS VGS= 0V,ID= 250 µA 60 VVGateThresholdVoltage GS(th) VDS =VGS,ID=250 µA 1 2 3 IGate-BodyLeakage GSS VDS= 0V,VGS= ±20V ±100 nA VDS= 60 V,VGS IZeroGateVoltage Drain Current DSS =0 V 1 VDS =60 V,VGS= 0V,TJ µA= 125°C 50 VDS =60 V,VGS= 0V,TJ= 175°C 250 IOn-StateDrain Currentb D(on) VDS =5 V,VGS=10 V 60 A VGS =10 V,ID RDrain-SourceOn-StateResistance b DS(on) =20 A 0.010 VGS= 10V,ID= 20 A,TJ =125 °C 0.016 VGS= 10V,ID= 20 A,TJ=175 °C 0.020 VGS= 4.5V,ID=15 A 0.012 gForward Transconductanceb fs VDS =15 V,ID= 20A 60 S Dynamic CInputCapacitance iss VGS =0 V,VDS= 25V,f=1 MHz 2650 C pFOutputCapacitance oss 470 CReverseTransfer Capacitance rss 225 QTotalGateCharge c g VDS=30 V,VGS= 10V,ID= 50A 47 70 nCQGate-SourceChargec gs 10 QGate-DrainChargec gd 12 tTurn-OnDelayTime c d(on) VDD=30 V,RL= 0.6 ID 50 A,VGEN=10 V,Rg= 2.5 10 20 tRiseTime ns c r 15 25 tTurn-OffDelayTime c d(off) 35 50 tFallTimec f 20 30 Source-Drain Diode Ratings and Characteristics(TC= 25 °C) IPulsedCurrent SM 70 A IF= 20A,VGSVDiodeForward Voltage SD =0V 1 1.5 V tReverse RecoveryTime rr IF=20 A,di/dt=100 A/µs 45 100 ns Notes: a. Fordesignaidonly; notsubjecttoproductiontesting. b. Pulsetest;pulsewidth  300µs,dutycycle  2 %. c.Independent ofoperatingtemperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. g

www.VBsemi.com VGS= 10 thru 5 V 4 V 2V,3 V Crss Coss ID Ciss - Drain Current (A) TYPICAL CHARACTERISTICS V -Gate-to-Source Voltage(V) (25 °C unless noted) 200 100 160 80 120 60 80 40 40 20 0 2 4 6 8 10 VDS- Drain-to-Source Voltage (V) Output Characteristics 0 1 2 3 4 5 VGS- Gate-to-Source Voltage (V) Transfer Characteristics 120 100 0.020 0.016 0.012 0.008 0.004 0 10 20 30 40 50 ID- Drain Current (A) Transconductance 0.000 0 20 40 60 80 100 ID- Drain Current (A) On-Resistance vs. Drain Current 4000 3500 3000 2500 2000 1500 1000 500 0 10 20 30 40 50 60 VDS- Drain-to-Source Voltage (V) Capacitance 0 10 20 30 40 50 Qg- Total Gate Charge (nC) Gate Charge TC= 125 °C 25 °C - 55 °C VGS= 4.5 V VGS= 10 V VDS= 30 V ID= 50 A C - Capacitance (pF) gfs- Transconductance (S) ID- Drain Current (A) RDS(on)- T GS C= -55 °C 25°C 125 °C g

VGS=10 V ID=20A www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C unless noted) 102.5 0 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75100 125 150 175 TJ-Junction Temperature(°C) On-Resistance vs. Junction Temperature VSD-Source-to-DrainVoltage(V) Source-Drain Diode Forward Voltage g TJ=150°C TJ=25 RDS(on)-On-Resistance (Normalized IS-SourceCurrent (A)

www.VBsemi.com THERMAL RATINGS 1000 100 0.1 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS> minimum VGSat which RDS(on) TA -Ambient Temperature (°C) Maximum Drain Current vs. Ambient Temperature is specified Safe Operating Area 0.1 0.01 10-4 10-3 10-2 10-1 1 Square WavePulse Duration (s) 10 100 Normalized Thermal Transient Impedance, Junction-to-Case Limited by RDS(on)* 10µs 100 µs 1ms 10ms 100 ms DC TC= 25 °C SinglePulse Duty Cycle = 0.5 0.2 0.1 0.05 0.02 SinglePulse ID- Drain Current (A)Normalized EffectiveTransient Thermal Impedance ID-Drain Current (A) g

www.VBsemi.com E Øn P L b TO-220 FULLPAK (HIGH VOLTAGE) e MILLIMETERS INCHES 4.570 2.570 2.510 0.622 1.229 1.229 0.440 8.650 15.88 12.300 10.360 4.830 2.830 2.850 0.890 1.400 1.400 0.629 9.800 16.120 12.920 10.630 0.180 0.101 0.099 0.024 0.048 0.048 0.017 0.341 0.622 0.484 0.408 0.190 0.111 0.112 0.035 0.055 0.055 0.025 0.386 0.635 0.509 0.419 2.54BSC A b c D E e L n ØP u 0.100BSC v 13.200 3.100 6.050 3.050 2.400 0.400 13.730 3.500 6.150 3.450 2.500 0.500 0.520 0.122 0.238 0.120 0.094 0.016 0.541 0.138 0.242 0.136 0.098 0.020 ECN:X09-0126-Rev.B,26-Oct-09 DWG:5972 Notes 1. Tobeusedonlyforprocessdrawing. 2. ThesedimensionsapplytoallTO-220,FULLPAKleadframeversions3leads. 3. AllcriticaldimensionsshouldCmeetCpk >1.33. 4. Alldimensionsincludeburrsandplatingthickness. 5. Nochippingorpackagedamage. A D u V c g

www.VBsemi.co Disclaimer m All products due to improve reliability, function or design or for other reasons, product specifications and data aresubjecttochangewithout notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including aparticular purpose, non-infringementand merchantabilityguarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemipurchasing termsandconditions,including butnotlimitedto warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used inTaiwanVBsemisuch applications using client didnot express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and otherterms and conditionsin writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product namesand trademarksreferred toherein aretrademarksof theirrespectiverepresentatives willbe all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.com) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A.