2SK192A TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FM TUNER APPLICATIONS Unit in mm VHF BAND AMPLIFIER APPLICATIONS azn © High Power Gain : Gpg=24dB (Typ.) (f=100MHz) By © Low Noise Figure : NF=1.8dB (Typ.) (f=100MHz) ossuax || 4 — Z @ High Forward Transfer Admittance i 3 q : lygs|=7mS (Typ.) (f= 1kHz) oe fl [ _ i MAXIMUM RATINGS (Ta = 25°C) a) _jayiaz, 3 CHARACTERISTIC SYMBOL aa z Gate-Drain Voltage Vapo = - pan Drain Power Dissipation [ Pp | 200 | mw | 2. SOURCE Junction Temperature or Storage Temperature Range —55~125 JEDEC = TOSHIBA 2-4E1D Weight : 0.13g¢ ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION | xan. | rye. [max.|unrr] Vas=—10V, Vps=0 | — | — [-10] na | Gate-Drain Breakdown Voltage | V (BR) GDO|IG=—100uA [-18| — | — | v | i Ipss = = Drain Current (Note) Ves=0, Vpg=10V 3 mA Gate-Source Cut-off Voltage Vas (OFF) | VpS=10V, Ip=1zA [-12[ -s | — | v | Forward Transfer Admittance lyesl Voes=0, Vpg=10V, f=1kHz [| — | 7| — | ms | Input Capacitance Vps=10V, Ves=0, f=1MHz| — | 35 | — | pr | Reverse Transfer Capacitance Vps=~10v, f=1MHz | — | - | 065] pr | Vpp=10V, f=100MHa (Fig) | — | 24 | — | ap | Vpp=10v, f=100mH2 rig.) | — | 18 [3.5 [ ap | Q61001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products, Nevertheless, semiconductor devices in general can malfunction or ‘all due to their inherent electrical Sensitivity and vulnerability to physical Stress. is the responsibilty of the buyer, when lang TOSHIBA products, to observe standards of safety, and t0 avoid situations in which @ malfunction oF failure of a TOSHIBA product could cause lost of hhuman life, bodily injury or damage to property. In developing. your, designs, please ensure that TOSHIBA products afe, used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ ‘he information contained herein is presented only as a guide for the applications of our products. No_ responsibilty is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property -or other rights of the third parties which may result from Its use. NO license’ Is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION co others @ The information contained herein is subject to change without notice. 1997-05-12 1/4
Input . 7PF D 8pF _ OUTPUT Ly : 0.8mm¢ Ag PLATED Cu = WIRE 3 TURNS, 10mm Ip, =500 RL=500 D: Rg=50 anys. L= 10mm LENGTH ey laa) lg Lg : 0.8mm¢ Ag PLATED Cu Ly o 2 & a L4 WIRE 3.5 TURNS, 10mm a 0.005 uF} 19 Ip, 10mm LENGTH Ie VpD Fig.1 100MHz Gps, NF TEST CIRCUIT STATIC CHARACTERISTICS Ip - Vas 4 comon 2 Fo coumon source |_| ||| 2 source |, COL Corr] - i | | tv Ta=25°C | a 4 CEE Vps=10V 20 2 Coo “HEH Ta=25°C TLV YA s HoH § were Roo" * FECH Ee jo | ee co 2 8 He 2 Ab aoe COP C TT “ey # LOCH &/ eer LEP AAA, 3 Hy yes COT ZAZA = a oS ee nr eee 40 ae Hyos-iov | SSS LALA [A], 8 Hy Fae arr cee Arar Lert) Fee ere a ee eae -32<24=15-08 0481216 028 rn a a CAE SOURCE OUTAGE DRAIN SOURCE OUTAGE GATE-SOURCE VOLTAGE Vgg (V) Ip - Vps (LOW VOLTAGE REGION) 16; wg source | err TTT Tan25% 7 ttt wl TY Pe pest | « ta i PALE good tee C8 Ee a Senne JIVE bosl | Bg CEE TH toss 200m 2 LUAATTT TTT TTT < 10 2 V Pre 2@ LOT tie Tt es & UAE | B= gf tT TTT Ty eer 4 S/n g= (CCL eee & Yee a [Tl art TTT TTT Try V7 ||
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cess eceeeenene ie ( seetsesecauens : e tell LTT tT = gfe er e | 5 wR fos Zz ====SS=>S=2>==> 5 a ee A A o — a 006 ee oogh LI Ee oosL LL Pe OSS 4 6 8 10 12 14 16 18 4 6 8 10. 12 4 16 18 DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN-SOURCE VOLTAGE Vpg (V) sx Yfs, Yrs — VDS «109 Pp - Ta E “Temggpeonee TCO E f=100MHz |_| | Bo hee LL ronnapsp tf o | | tt tT SS FSP eer = —O SSS y FS ECEP Ere] 3, Lif tt tet ttt 200) Bf Ree P NEP Ett ..==SSS2====S=== pi NT tt te i =saaascaascena : ~ J ee Pi EN EEE
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$ ol TITIiTi titi iT) 6 g 4 6 68 1 12 14 16 18 0 50 100 150 200 DRAIN-SOURCE VOLTAGE Vpg (V) AMBIENT TEMPERATURE Ta (C) 1997-05-12 4/4