ITK17A80W ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor TK17A80W，ITK17A80W
- FEATURES
- Lowdrain-sourceon-resistance:RDS(ON)=0.25Ω (typ.)
- Enhancementmode: Vth=3.0 to4.0V(VDS =10 V,ID=0.85mA)
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- Switching VoltageRegulators
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 800 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 17 A IDM DrainCurrent-SinglePulsed 68 A PD TotalDissipation@TC=25℃ 45 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 2.78 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor TK17A80W，ITK17A80W ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=10mA 800 V VGS(th) GateThresholdVoltage VDS=10V;ID=0.85mA 3.0 4.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=8.5A 250 290 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±1 μA IDSS Drain-SourceLeakage Current VDS=800V;VGS=0V 10 μA VSDF Diodeforwardvoltage IDR =17A,VGS =0V 1.7 V