2SK1773 HITACHI | Alldatasheet
Document overview
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- PDF pages: 10
Technical content
Features
- Low on-resistance
- High speed switching
- Low drive current
- No secondary breakdown
- Suitable for switchingregulator, DC-DC converter Outline TO-3P 1. Gate 2. Drain (Flange) 3. Source D G S
Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS 1000 V Gate to source voltage V GSS –30 V Drain current I D 5A Drain peak current I D(pulse)*1 15 A Body to drain diode reverse drain current IDR 5A Channel dissipation P ch*2 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW £ 10 ms, duty cycle £ 1 % 2. Value at Tc = 25 °C
Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 1000 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS –30 — — V I G = –100 mA, VDS = 0 Gate to source leak current IGSS —— –10 mAV GS = –25 V, VDS = 0 Zero gate voltage drain current IDSS — — 250 mAV DS = 800 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance R DS(on) — 1.5 2.0 W ID = 3 A VGS = 10 V*1 Forward transfer admittance |yfs| 3.2 5.0 — S I D = 3 A VDS = 20 V*1 Input capacitance Ciss — 1700 — pF V DS = 10 V Output capacitance Coss — 700 — pF V GS = 0 Reverse transfer capacitance Crss — 315 — pF f = 1 MHz Turn-on delay time t d(on) — 25 — ns I D = 3 A Rise time t r — 110 — ns V GS = 10 V Turn-off delay time t d(off) — 210 — ns R L = 10 W Fall time t f — 135 — ns Body to drain diode forward voltage VDF — 0.85 — V I F = 5 A, VGS = 0 Body to drain diode reverse recovery time trr — 1050 — ns I F = 5 A, VGS = 0, diF / dt = 100 A / ms Note 1. Pulse Test
Channel Dissipation Pch (W) 50 100 150 200 Case Temperature Tc (°C) Power vs. Temperature Derating 50 0.3 0.1 0.05 10 30 100 300 1000 3000 10000 Drain to Source Voltage V (V)DS Drain Current I (A)D 1 ms PW = 10 ms (1 shot) DC Operation (Tc = 25°C) 10 s µ100 s µ Operationm in this area is limited by R (on)DS Ta = 25°C Maximum Safe Operation Area 0 10 20 30 40 50 Drain Current I (A)D Drain to Source Voltage V (V)DS
10 V 8 V
5.5 V Pulse Test 5 V 4 V V = 3.5 VGS Typical Output Characteristics 02 46 8 1 0 Gate to Source Voltage V (V) GS Drain Current I (A)D Tc = 75°C 25°C –25°C V = 10 V Pulse Test DS Typical Transfer Characteristics
Gate to Source Voltage V (V)GS Drain to Source Saturation Voltage V (on) (V)DS Pulse Test 5 A 2 A I = 1 AD Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 0.2 0.5 1 2 5 10 20 Drain Current I (A)D Static Drain–Source on State Resistance R (on) ( )DS Ω Pulse Test V = 10 VGS Static Drain to Source on State Resistance vs. Drain Current –40 0 40 80 120 160 Case Temperature T (°C)C Static Drain–Source on State Resistance R (on) ( )DS Ω Pulse Test V = 10 V
2 A 1 A
I = 5 AD GS Static Drain to Source on State Resistance vs. Temperature 0.5 0.2 0.1 0.05 0.1 0.2 0.5 1 2 5 Forward Transfer Admittance |y | (S) Drain Current I (A)D Tc = – 25°C 25°C 75°C V = 10 V Pulse Test DS fs Forward Transfer Admittance vs. Drain Current
0.1 0.2 0.5 1 2 5 10 Reverse Recovery Time trr (ns) Reverse Drain Current I (A)DR µdi / dt = 100 A / s V = 0, Ta =25°CGS Body to Drain Diode Reverse Recovry Time 10000 1000 100 01 0 20 30 40 50 Capacitance C (pf) Drain to Source Voltage V (V)DS Ciss Coss Crss V = 0 f = 1 MHz GS Typical Capacitance vs. Drain to Source Voltage 1000 800 600 200 04 0 8 0 120 160 200 Gate Charge Qg (nc) Drain to Source Voltage V (V)DS 400 V 600 V 400 V 250 V V GS I = 5 AD V = 600 VDD V = 250 VDD V DS 400 Gate to Source Voltage V (V)GS Dynamic Input Characteristics 500 200 100 0.1 0.2 0.5 1 2 5 10 Switing Time t (ns) Drain Current I (A)D td (off) tf tr td (on) V = 10 V, V 30 V PW = 2 s, duty < 1% GS µ =..DD Switching Characteristics
Source to Drain Voltage V (V) SD Reverse Drain Current I (A)DR Pulse Test 0, – 5 V V = 10 VGS Recerse Drain Current vs. Source to Drain Voltage 10 100 1 m 10 m 100 m 10 0.01 0.03 0.1 0.3 1.0 Pulse Width PW (S) Normalized Transient Thermal Impedance s (t)γ µ µ D = 1 0.5 0.2 0.1 0.05 0.02 1 shot Pulse Tc = 25°C 0.01 θ ch – c(t) = s(t) ch – c ch – c = 1.25°C / W, Tc = 25°C P D = PW T PWT DM γ . θ θ Normalized Transient Thermal Impedance vs. Pulse Width
R V 30 V 50Vin 10 V D.U.T DD L =.. Ω Switching Time Test Circuit Vin 10 % 90 % 90 %90 % 10 % td (on) td (off)tr tf Vout 10 % Waveforms
φ3.2 – 0.2 4.8 – 0.2 1.5 0.3 2.8 0.6 – 0.21.0 – 0.2 15.6 – 0.3 0.5 1.0 5.0 – 0.3 1.6 1.4 Max 2.0 2.0 14.9 – 0.2 3.6 0.9 1.0 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P Conforms 5.0 g Unit: mm
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