2SK1767 TOSHIBA | Alldatasheet
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Discrete Semiconductors 2SK1767 —— eee INO Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type ¢-MOS II1.5) High Speed, High Current Switching Applications Ez S Fe f <0, Features oad Low Drain-Source ON Resistance 3 - Rogion = 1.9 (Typ.) ® * High Forward Transfer Admittance 1 | - Njgl = 3.08 (Typ.) ma ! © Low Leakage Current i - Ipgg = 100A (Max.) @ Vpg= 600V O75£0.15 4 HF * Enhancement-Mode 5 3 - Vin = 2:1 ~ 4.0V @ Vpg= 10V, b = -1mA 2: 42028 254+0.25 be 2 Absolute Maximum Ratings (Ta = 25€) La be
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CHARACTERISTIC SYMBOL [ nating | uNrr J . + as A a care | a aE fete * | BA) __SC-67 (Tc = 25°C) 7 Weight : 1.9; a _ a Thermal Characteristics CHARACTERISTIC SYMBOL | Max. [unr | [Thermal Resistance, Channel To Case | Rene) | 3.125 [CA _| [Thermal Resistance, Channel fo Ambient | Renay [625 [CW | This transister is an electrostatic sensitive device. Please handle with caution.
Electrical Characteristics (Ta = 25€) a a a a A a Parsons resi | Wome [oe | PL a] Foner [Wal [Vetosee PP OT S| C= ar | pea a [Tate 10V Ry= 800. Vpp=200V VIN S tye ty<5ns [est Baamonn | ee (Gate-Source Plus Gate-Drain) [swan cme [a | LE et=7 Source-Drain Diode Ratings and Characteristics (Ta = 2&0) [emacs [seit rear common [we] Te wa SA A [Fuse oaintewee Owen [ae [TP | [Sie Fort aes YN = ae Y fees —t ef ey
'b-Ves! Yo-Yos 20 - Set ta) [4 aul ttt mati | i. z y = 1 25 BY 4a p— Bp Am eee DARE a a AEE ESEEEe eee” ° 1 2 3 4 5 : DRAIN-SOURCE VOLTAGE Vps (V) DS(ON) = 10 4 am ze woo . SCP Pec fe 23 f tl Ce Blt leedied = 3 ‘og 03 3 10 2 eee mmoney ea PTA TT Te TTT ett ten PEER RECHE 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE Vps (V)
= Vos bes _ teres - tbe
10 Feonrow SOURCE 3000 ben gates eomenga ate cae wnt nde
YoS+25¥ OBL ie. : § (SE SOE Fa 2 oo] NEE F | sdesabusdemalendpgleudeleentsual Ee = 100 ce 2 gaa ES Fy Hh eLi TT Py Try: : “TT TTTETTT TT) te x ves-or fh Toxt5 °C H} ‘f-30 Ltt if@ tt tt) 2 Ot 0.3 1 3 10 Evy 100 on i2e808 cane | | Qf to=-55C ie 0 2 4 6 4 10 GATE-SOURCE VOLTAGE V@g (V)
RDS (ON) — To eee aaa ma GAT RR H i a po
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[ Bebe ey oe 3 PETS tes Sy EE ee Pee ae | Eg Sane ea oS ee eee 25 ean | Pi eegenencceusceses-7aest a ==== SSseceees 2 : § ‘pp FE Se erse aan bf eee 2 ober ee Fa ccs cas scence nar weno ee : i MA ka A TCL | 80 ™40 ry 0 80 120 160 Ea se MA 9 A MRSS | ee oe i Ba = CASE TEMPERATURE Te (°C)
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i EY eT a 2] Vin <Te (DRAINSOURCE VOLTAGE Vps (V) I¥ts} - ip ‘ . = : COMNON SOURCE en : Seat a ee w PYDS=25¥ = pets — crow on ee Ca) Sen et ne, g Plt LE peo 3 > : z a a a ee at are a co ot = fae 3}. — s ee 4 . ge |. oes | “ coe
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6 1 ~y we tenes Ils . ce ry 40 fy 40 80 120 160 ‘CASE TEMPERATURE Te (°C) asi“? : art) 0.3 1 3 10 DRAIN CURRENT Ip {A)
DYNAMIC INPUTIOUTPUT CHARACTERISTICS wu ET “AAA wee P ee LR od 7 See i Pet RE é ee 2 scol A hz 2 See eae
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PREC CCCO, © og =SHH SHEA a SSF Secon PAY\\R TET TT TT wrcorcurmanen PAA ASS Co ci Cn TOTAL GATE CHARGE Qg (nC) . _ Asciiiew sent OMT = GSS ee La A a LTTtTi tt ti TT STINT NY SECO) PISS 2 a 1 Pere i Se e L + sas amortin rse tease CLL | PCCCCRSCo EEE : LH CASE TEMPERATURE Te ("0) 3 re ” 100 30 y000 onanccunce vont sta