2SK1760 NEC | Alldatasheet
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a SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK1760 is N-channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS signed for high voltage switching applications. 93.0+02 FEATURES 47MAX. © Low On-state Resistance e 15.7 MAX, /' S| 15 Ros(on) $ 4.0 Q (Ves = 10 V, Ip = 3 A) 7 RY © Low Cis Ciss = 790 pF TYP. a | / ex BI © Built-in G-S Gate Protection Diode S| ot g © High Avalanche Capability Ratings | ° a QUALITY GRADE r Standard z S| Please refer to “Quality grade on NEC Semiconductor Devices” 2) 3 (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its 22x02 - aye o8x01,l| | 28201 recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) , Gate Drain to Source Voltage Voss 900 Vv 3. Source Gate to Source Voltage Voss 430 OV 4 Fin {Drain} Drain Current (DC) lowe) $5.0 A ~ Drain Current (pulse) lo(putse)* +10 A Total Power Dissipation (Tc = 25 °C) Pr 100 w Drain (D) Channel Temperature Teh 150 °c Storage Temperature Tstg -55 to +150 °C * PWS 10 us, Duty Cycle $ 1% Body Diode Gate (G) Gate Protection Diode ‘Source (S) Document No. TC-2437 Date Published August 1993 M Printed in Japan © NEC Corporation 1993
ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC symeot | MIN. | Typ. | MAX. | UNIT TEST CONDITIONS ) Drain to Source On-state Resistance | Row | | 31 | 40 | Q | Vos=10V,lo=3A Gate to Source Cutoff Voltage [Voswm | 25 | | 35 | v_ | Voe=10V,l0=1maA Forward Transfer Admittance [ivi [| 10 [| 31 | [S| Voo=20V,0=3A Gate to Source Leakage Current [ts | | eto | wk _| Vos =430V, Vos =0 Ri= 509 Voo = 150 V, L = 100 yH Single Avalanche Current a | Ro= 252, Vos = 20V +0 : Unclamped Starting Ten = 25 °C Test Circuit 1: Avalanche Capability Test Circuit 2: Switching Time DUT but Ves 90% = v Ro= 250 L a ee 0% neon oe (FO _ PG. 50 Voo PG.@D Ro = oo - Ves = 20> 0V al 4 e p90 % lo wal iaite BVoss Wave] 0224 ry ves [| Form sy 1 Nos 0 terony || [te torn] || te bo AY t tr Ne 1\\ to---- + ton teat ! ' oa t= Tus L seoning Ten Duty Cycle $1 % Test Circuit 3: Gate Charge bur lo=2mA Re ro te Q | T Voo
TYPICAL CHARACTERISTICS (Ta = 25 °C) ~ DERATING FACTOR OF FORWARD BIAS FORWARD BIAS SAFE OPERATING AREA SAFE OPERATING AREA 10 eee __ FLINT T ; CNA © 6 NJ + Leet IT [TMNT SERN , Fae S PLETE NEE ¢ es : \\ FN 2 40 201 baad LL o EE PEE EIEN eS esiere eee i
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» LETT || IN oon Bese Pel LTH LLL 0 20 40 60 80 100 120 140 160 1 10 100 1000 Tc- Case Temperature - °C Vos ~ Drain to Source Voltage - V TOTAL POWER DISSIPATION vs. DRAIN CURRENT vs. CASE TEMPERATURE DRAIN TO SOURCE VOLTAGE 100 8 "TNT TLLD TL ponn 7 ae coo PIAL > os ~ J 7 \\ a ‘ \\ oy 3 t iN Zi | | | tf | 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35 Te~ Case Temperature ~ °C Vos - Drain to Source Voltage - V ~ TRANSFER CHARACTERISTICS FT r= -25°cf TTT TT vos = 20V woe EL Mised | < GREER ASSES EEE RES L COCOA geet =o LU Bee Ail === eeeeeceeaeel & 200 » ott eee eee eee ooLLETITTTITT TTT Tt ttt ie) 5 10 15 18 Ves - Gate to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH g CoO on BT Ld TT OT Tt a © on LUM TTT < | | | eyeeg a & ESSE ee ni Fee HE corel se ooo: CACTI | note Pulse é 10m 1004 Im 10m 100m 1 10 PW - Pulse Width - s FORWARD TRANSFER ADMITTANCE vs. ws DRAIN TO SOURCE ON-STATE RESISTANCE DRAIN CURRENT rm" vs. GATE TO SOURCE VOLTAGE SSSSea CPT TT] 3 = Soa :
2 Ta = 25 CSE 3 |_|
§ bet Pe ey Mail ed er 10 | ae : ee eZ 7. er 3 0.8. A a a = LLU TUT viol | | | [ 7 0.1 1.0 10 z 0 10 20 30 lo - Drain Current - A © lo - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE GATE TO SOURCE CUTOFF VOLTAGE vs. S vs. DRAIN CURRENT CHANNEL TEMPERATURE —— > 40 e CMT : ima 5 all | 3 DeimA a 4 f 2 i
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Ni FORWARD VOI = ON-STATE RESIST, 10 22======>2== VR CANNEL TEMPERATURE - . aueaenes Zane i [| my | an Sav 4a geseeeee eee 3 60 Lt tt é Seeaeassseee coo) eee i PTT |_| lerdece teen pCCpert a> canes AEEEES pee CE A B sol 4 | ee * oP ETE TTT} £0 0 50 ° ENT s 50 = IN CURR’ a Ter Channel Temperature 5 ee “ba. ICE vs. DRAIN Tt 1000 Sarees ey i" SSeS eett oes ri 2 100 =e i Saiiilimnnsilipaaaiil seth eee eer
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° 100 TIME vs. " * Source Voltage - V EOS ECVE Ne Vos - Drain to REVERS TTT aivat = 50 ps cs 00 [T] OUTPUT CHARACTERISTICS 14 aera DYNAMIC INPUT 62 Eling Sooner ee ee ae eee = 450V 2 8 = 800 [ {| | | Tp > 700 rt Wee = 480 N. |" = eT 0 | ATi i PSP TAN ZA 8 F ty Tr Bt [Zien tv BA” st an
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e™ WL gt OL CO 10 5 ool PA pitt) s f (PTH & 200 FAM || | 4 1 t-A . A | | |, 0. Forward Current § 100 p NCCE “0 I~ Diode Fw Oo 1 0 5 ve cate Chore ne
Tpplication note name [ed Safe operating area of Power MOS FET. TEA-1034 ~ Application circuit using Power MOS FET. TEA-1035 Quality control of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. MEI-1202 Assembly manual of semiconductors devices. 11-1207 No part of this document may be copied or reproduced in any form or by any means without the prior written — consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact _ our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6