2SK170 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm 5.1 MAX. © Recommended for first stages of EQ and M.C. Head Amplifiers. | || Fi © High [Yep + [¥pg|=22ms (Typ.) os a (Vpg=10V, Vgg=0, Ipgg=3mA) ossmax. {) ae © High Breakdown Voltage : Vgpg=—40V os “8 © Low Noise : Ey=0.95nV /V Hz (Typ.) (Vpg=10V, Ip=1mA, f=1kHz) ay 2? | ime © High Input Impedance : Iggg=—nA (Max.) (Vqg=—30V) S| en) i MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL | RATING UNIT Tops + onan 3. SOURCE | Drain Power Dissipation _| Pp _{ _400_| mW | TEDEC 70-32 ——— EIAS S043 Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION | ma. | rye. [ax. unr] Gate Cutoff Current | Iass | Vas=—-30V, Vps=0 | — | — [-10] na | Gate-Drain Breakdown oo ne ee [estes | oe] | mf Gate-Source Cut-off Voltage [Ves orm| Vps=10V, Ip=0.1nA [-o2]| — |-15] v | Forward Transfer Input Capacitance Vps=10V, Vqs=0,f=1MHz | — | 30| — | pr | Reverse Transfer Vps=10V, Ip=1.0mA, Noise Figure me ta p= 1kO, f= 1H * *
8 NF@ | VDS=10V, Ip=10mA, Os
Rg=1k0, f=1kHz " Note :Ipgg Classification GR: 2.6~6.5mA, BL: 6.0~12mA, V : 10~20mA 2610016442 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilty of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Sperating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-04-10 1/4
STATIC CHARACTERISTICS Ip - Vpg (LOW VOLTAGE REGION) 16) commox | | tt common souwce | | | | | Vas=0Vv Ta=25°C peoe Bf J at acc B= b12 aT 2 4 er | | be 7 | e LEFT | Ee! /f | [ te & ES p47 _| a = a 2 Lt PY | os | eLerTT TT a z |_| ee fa AT fo ee ae== on a re Mm L LY | be \\_ -08 04 0 20 40 0 4 3 2 16 GATE-SOURCE VOLTAGE DRAIN-SOURCE Vos () VOLTAGE Vpg (V) DRAIN-SOURCE VOLTAGE Vpg (V) Ip - Vas 2 lYés| — ID mom | TT» SDD Vps= = & 00 aoe age [||] I Ta=25°C /| n=! Ss /, ee Ll jet lf eee 4 “a Z| oS BF LLL), BL AY coms sins 2 2 29 Vps=10V ee 4 y Ay a € f=1kHz (_~ 8 Z| Pe a el lo A 06 0.4 “02 5 ° 4 3 2 16 GATE-SOURCE VOLTAGE Vgs (V) DRAIN CURRENT Ip (mA) 100 l¥ts| — IDss Vas (OFF) — IDss COMMON SOURCE [rr try | | | 8 Ipss : Vps=tov. ee 1g -3| COMMON SOURCE HI zg ves=o | g Ipss__: Vps=10V Hit | Ego) Male ¥pgetov, rr é Vos=0 5 ferme = | [| | | $ Vesiorr) : Vps=10V ag % Pa S$. _,| ta=25° eB —| se -! es | is L— BS a SG 23 4 fo tal 880 ee 5 1 cid -o —| tt 2 | et | 2 et Deacon 2 ee 3 © A St * oo TET TT Bs 1 3 1020 ae 3 10 30 DRAIN CURRENT Ipgg (mA) DRAIN CURRENT Ipgg (mA) Q61001EAA2’ @ The information contained herein is presented only as a guide for the applications of our products. No. responsibilty is assumed by TOSHIBA CORPORATION for any infringements of intelectual roperty or other rights ofthe third partes which may resit from it use, No license s granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others @ The information contained herein is subject to change without notice. 1997-04-10 2/4
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