2SK168 HITACHI | Alldatasheet
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Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline 1. Gate 2. Source 3. Drain TO-92 (2)
Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Gate to drain voltage V GDO –30 V Gate to source voltage V GSS –1 V Gate current I G 10 mA Drain current I D 20 mA Channel power dissipation Pch 200 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Gate to drain breakdown voltage V(BR)GDO –30 — — V I G = –100 mA, IS = 0 Gate cutoff current I GSS — — –10 nA V GS = –0.5 V, VDS = 0 Drain current I DSS *1 4 — 20 mA V DS = 5 V, VGS = 0 Gate to source cutoff voltage VGS(off) — — –3.0 V V DS = 5 V, ID = 10 mA Forward transfer admittance |yfs|81 0 — m S V DS = 5 V, VGS = 0, f = 1 kHz Input capacitance Ciss — 6.8 — pF V DS = 5 V, VGS = 0, f = 1 MHz Reverse transfer capacitance Crss — 0.1 — pF V DS = 5 V, VGS = 0, f = 1 MHz Power gain PG — 27 — dB V DS = 5 V, VGS = 0, f = 100 MHz Noise figure NF — 1.7 — dB V DS = 5 V, VGS = 0, f = 100 MHz Note: 1. The 2SK168 is grouped by IDSS as follows. DEF 4 to 8 6 to 12 10 to 20
Ambient Temperature Ta (°C) Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 100 150 0 10 20 Drain to Source Voltage VDS (V) Drain Current ID (mA) Typical Output Characteristics (1) 30 40 50 –1.0 –0.8 –0.6 –0.4 –0.2 V VGS = 0 Pch = 200 mW Drain to Source Voltage VDS (V) Drain Current ID (mA) Typical Output Characteristics (2) 345 –0.4 –0.6 –0.8 –1.0 –0.2 V VGS = 0 –3.0 –2.0 Gate to Source Voltage VGS (V) Drain Current ID (mA) Typical Transfer Characteristics –1.0 0 VDS = 5 V F E D
Drain to Source Voltage VDS (V) Forward Transfer Admittance yfs (mS) Forward Transfer Admittance vs. Drain to Source Voltage 10 15 VGS = 0 f = 1 kHz Ta = –25°C 25°C 75°C 0.5 1.0 0.5 1.0 20.2 Drain Current ID (mA) Forward Transfer Admittanceyfs (mS) Forward Transfer Admittance vs. Drain Current 1052 0 VDS = 5 V f = 1 kHz 0.2 0.5 1.00.1 Drain to Source Voltage VDS (V) Input Capacitance Ciss (pF) Input Capacitance vs. Drain to Source Voltage 521 0 VGS = 0 f = 1 MHz 0.05 0.5 0.2 0.1 0.2 0.5 1.00.1 Drain to Source Voltage VDS (V) Reverse Transfer Capacitance Crss (pF) Reverse Transfer Capacitance vs. Drain to Source Voltage 521 0 VGS = 0 f = 1 MHz 1.0
0.2 0.5 1.00.1 Drain to Source Voltage VDS (V) Output Capacitance Coss (pF) Output Capacitance vs. Drain to Source Voltage 521 0 VGS = 0 f = 1 MHz 100 Drain to Source Voltage VDS (V) Power Gain PG (dB) Power Gain vs. Drain to Source Voltage 10 15 VGS = 0 f = 100 MHz 468 1 02 Drain Current ID (mA) Power Gain PG (dB) Power Gain vs. Drain Current 1412 16 VDS = 5 V f = 100 MHz V GS Variable D E F Drain to Source Voltage VDS (V) Noise Figure NF (dB) Noise Figure vs. Drain to Source Voltage 12 16 VGS = 0 f = 100 MHz
0.5 1.0 0.2 0.1 0.05 100 200 Frequency f (MHz) Input Admittance yis (mS) Output Admittance yos (mS) Input and Output Admittance vs. Frequency 500 yis = gis+jbis yos = gos+jbos VDS = 5 V ID = 10 mA gis gos bis×10 bos×10 1.0 0.5 100 200 Frequency f (MHz) Forward Transfer Admittance yfs (mS) Reverse Transfer Admittance yrs (mS) Transfer Admittance vs. Frequency 500 VDS = 5 V ID = 10 mA yfs = gfs+jbfs yrs = grs+jbfs gfs –bfs –10 brs 10 grs 1.0 0.5 0.2 0.1 0.05 2 5 10 20 Drain Current ID (mA) Input Admittance yis (mS) Output Admittance yos (mS) Input and Output Admittance vs. Drain Current yis = gis+jbis yos = gos+jbos bos gis 0.5 1.0 VDS = 5 V f = 100 MHz gos is Negligible Small at This Frequency bis×10 1.0 0.5 2 5 10 20 Drain Current ID (mA) Forward Transfer Admittance yfs (mS) Reverse Transfer Admittance yrs (mS) Transfer Admittance vs. Drain Current yfs = gfs+jbfs yrs = grs+jbrs –bfs –100 brs 100 grs gfs 0.5 1.0 VDS = 5 V f = 100 MHz
Impedance S.G. 50 V.V 5.4 3.0 VDD 4,700 1,000 Shield Power Gain and Noise Figure Test Circuit C 1, C2 : 0 to 30 pF Variable Air L1 : 3.5 T 1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia. L2 : 4.5 T 1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia. C 1 C 2 D.U.T. Unit R : Ω C : pF
0.60 Max
0.45 – 0.1 5.0 – 0.2 0.7
2.3 Max
12.7 Min 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Unit: mm
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