2SK1521 HITACHI | Alldatasheet
Document overview
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Technical content
Features
- Low on-resistance
- High speed switching
- Low drive current
- Built-in fast recovery diode (trr = 120 ns)
- Suitable for motor control, switching regulator, DC-DC converter Outline TO-3PL 1. Gate 2. Drain 3. Source D G S
2SK1521, 2SK1522 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage 2SK1521 V DSS 450 V 2SK1522 500 Gate to source voltage V GSS –30 V Drain current I D 50 A Drain peak current I D(pulse)*1 200 A Body to drain diode reverse drain current IDR 50 A Channel dissipation Pch* 2 250 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW £ 10 ms, duty cycle £ 1% 2. Value at TC = 25°C
2SK1521, 2SK1522 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source 2SK1521 V (BR)DSS 450 — — V I D = 10 mA, VGS = 0 breakdown voltage 2SK1522 500 Gate to source breakdown voltage V(BR)GSS –3 0 ——V I G = –100 mA, VDS = 0 Gate to source leak current IGSS —— –10 mAV GS = –25 V, VDS = 0 Zero gate voltage 2SK1521 IDSS — — 250 mAV DS = 360 V, VGS = 0 drain current 2SK1522 V DS = 400 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static Drain to source 2SK1521 RDS(on) — 0.08 0.10 W ID = 25 A, VGS = 10 V *1 on state resistance 2SK1522 — 0.085 0.11 Forward transfer admittance |yfs| 22 35 — S I D = 25 A, VDS = 10 V *1 Input capacitance Ciss — 8700 — pF V DS = 10 V, VGS = 0, Output capacitance Coss — 2400 — pF f = 1 MHz Reverse transfer capacitance Crss — 235 — pF Turn-on delay time t d(on) — 85 — ns I D = 25 A, VGS = 10 V, Rise time t r — 250 — ns R L = 1.2 W Turn-off delay time t d(off) — 600 — ns Fall time t f — 250 — ns Body to drain diode forward voltage VDF — 1.1 — V I F = 50 A, VGS = 0 Body to drain diode reverse recovery time trr — 120 — ns I F = 50 A, VGS = 0, diF/dt = 100 A/ms Note: 1. Pulse test
2SK1521, 2SK1522 300 200 100 0 50 100 150 Case Temperature TC (°C) Channel Dissipation Pch (W) Power vs. Temperature Derating 1,000 1,000 Drain to Source Voltage VDS (V) Drain Current ID (A) Maximum Safe Operation Area 300 100 0.3 0.1 3 10 30 100 300 100 µs1 msDC Operation (T C = 25°C) PW = 10 ms (1 Shot) µs Ta = 25°C Operation in this areais limited by R DS (on) 2SK1521 2SK1522 100 82 0 Drain to Source Voltage VDS (V) Typical Output Characteristics 41 2 1 60 Drain Current ID (A) Pulse Test VGS = 4 V 8 V
10 V 6 V
5.5 V 5 V 4.5 V 100 41 0 Gate to Source Voltage VGS (V) Drain Current ID (A) Typical Transfer Characteristics 26 80 VDS = 20 V Pulse Test TC = 75°C –25°C 25°C
2SK1521, 2SK1522 82 0 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS (on) (V) 41 2 1 60 Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test ID = 10 A 20 A
50 A 1
Drain Current ID (A) Static Drain to Source on State Resistance R DS (on) (Ω ) Static Drain to Source on State Resistance vs. Drain Current 0.5 0.2 0.1 0.05 0.02 0.01 10 20 50 100 200 VGS = 10, 15 V Pulse Test 0.5 40 160 Case Temperature TC (°C) Static Drain to Source on State Resistance R DS (on) (Ω ) 0.4 0.1 0 80 120 0.2 0.3 Static Drain to Source on State Resistance vs. Temperature –40 Pulse Test ID = 50 A 20 A 10 A Drain Current ID (A) Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current 0.5 1 2 5 10 20 0.5 VDS = 20 V Pulse Test TC = –25°C 25°C 75°C
2SK1521, 2SK1522 500 Reverse Drain Current IDR (A) Reverse Recovery Time trr (ns) Body to Drain Diode Reverse Recovery Time 0.5 200 100 12 5 1 0 2 0 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test 10,000 20 50 Drain to Source Voltage VDS (V) Capacitance C (pF) 10 30 40 Typical Capacitance vs. Drain to Source Voltage 1,000 100 VGS = 0 f = 1 MHz Crss Coss Ciss 500 160 400 Gate Charge Qg (nc) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 400 100 80 240 3200 200 300 Gate to Source Voltage VGS (V)VDD = 100 V 250 V 400 V ID = 50 A VDS VGS VDD = 400 V 250 V 100 V 5,000 Drain Current ID (A) Switching Time t (ns) 0.5 Switching Characteristics 2,000 1,000 500 200 100 15 1 022 0 VGS = 10 V, VDD 30 V PW = 2 µs, duty < 1% =.. td (off) tf td (on) tr
2SK1521, 2SK1522 100 0.8 2.0 Source to Drain Voltage VSD (V) Reverse Drain Current IDR (A)80 0.4 1.2 1.6 Reverse Drain Current vs. Source to Drain Voltage Pulse Test VGS = 0, –5 V 10 V Pulse Width PW (s) Normalized Transient Thermal Impedance γS (t) 0.1 0.3 10 µ 0.03 0.01 100 µ 10 m 100 m 1 101 m Normalized Transient Thermal Impedance vs. Pulse Width TC = 25°C PW PDM D = T PW θch–c (t) = γS (t) · θch–c θch–c = 0.5°C/W, TC = 25°C T D = 1 0.5 0.2 0.1 0.05 0.02 0.01
1 Shot Pulse
Switching Time Test Circuit Vin Monitor Vout Monitor R L VDD 30 V D.U.T 50 Ω Vin 10 V =.. Vout Waveforms td (on) 10% 10% 90% 90% 10% 90% Vin tr td (off) tf
20.0 – 0.3 φ3.3 – 0.2 1.4 2.2 3.0 1.2 1.0 3.8 7.4 2.8 – 0.20.6 5.0 – 0.2 6.0 – 0.2 2.5 – 0.3 +0.25 –0.1 +0.25 –0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3PL 9.9 g Unit: mm
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