2SK1358 TOSHIBA | Alldatasheet
Document overview
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Technical content
Features
- Low Drain-Source ON Resistance DS(ON) = 1.1 W (Typ.)
- High Forward Transfer Admittance œ Y fs œ = 4.0S (Typ.)
- Low Leakage Current DSS = 300 m A (Max.) @ V DS = 720V
- Enhancement-Mode th = 1.5 ~ 3.5V @ V DS = 10V, I D = 1mA This transistor is an electrostatic sensitive device. Please handle with care. Absolute Maximum Ratings (Ta = 25 CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage V DSS 900 V Drain-Gate Voltage (R GS = 20k W DGR 900 V Gate-Source Voltage V GSS 30 V Drain Current DC I D Pulse I DP Drain Power Dissipation (Tc = 25 P D 150 W Channel Temperature T ch 150 C Storage Temperature Range T stg -55 ~ 150 C Thermal Characteristics CHARACTERISTIC SYMBOL MAX. UNIT Thermal Resistance, Channel to Case R th(ch-c) 0.833 C/W Thermal Resistance, Channel to Ambient R th(ch-a) C/W Unit in mmIndustrial Applications
Source-Drain Diode Ratings and Characteristics (Ta = 25 Electrical Characteristics (Ta = 25 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP . MAX. UNIT Gate Leakage Current I GSS V GS 25V, V DS = 0V – – 100 nA Drain Cut-off Current I DSS V DS = 720V, V GS = 0V – – 300 m A Drain-Source Breakdown Voltage V (BR) DSS I D = 10mA, V GS = 0V 900 – – V Gate Threshold Voltage V th V DS = 10V, I D = 1mA 1.5 – 3.5 V Drain-Source ON Resistance R DS (ON) I D = 4A, V GS = 10V – 1.1 1.4 W Forward Transfer Admittance œ Y fs œ V DS = 20V, I D = 4A 2.0 4.0 – S Input Capacitance C iss V DS = 25V, V GS = 0V, f = 1MHz – 1300 1800 pFReverse Transfer Capacitance C rss – 100 150 Output Capacitance C oss – 180 260 Switching Time Rise Time t r –2 5 5 0 ns Turn-on Time t on –4 0 8 0 Fall Time t f –2 0 4 0 Turn-off Time t off – 100 200 Total Gate Charge (Gate-Source Plus Gate-Drain) Q g V DD = 400V, V GS = 10V, I D = 9A – 120 240 nCGate-Source Charge Q gs –7 0– Gate-Drain (“Miller”) Charge Q gd –5 0– CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP . MAX. UNIT Continuous Drain Reverse Current I DR – – – 9 A Pulse Drain Reverse Current I DRP – – – 27 A Diode Forward Voltage V DSF I DR = 9A, V GS = 0V – – -2.0 V
f The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip- ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA. Notes