TK12A60D ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor TK12A60D
- FEATURES
- WithTO-220Fpackaging
- Highspeed switching
- Lowgateinputresistance
- Standardlevelgate drive
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Powersupply
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous 12 A IDM DrainCurrent-SinglePulsed 48 A PD TotalDissipation 45 W Tj OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 2.78 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor TK12A60D ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=10mA 600 V VGS(th) GateThresholdVoltage VDS=VGS;ID=1mA 2.0 4.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=6A 600 mΩ IGSS Gate-SourceLeakageCurrent VGS=±30V;VDS=0V ±1 μA IDSS Drain-SourceLeakageCurrent VDS=600V;VGS=0V; 10 μA VSDF Diodeforwardvoltage ISD=12A,VGS =0V 1.7 V