K1284

2SK1284 NEC | Alldatasheet

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MOS FIELD EFFECT POWER TRANSISTOR NEC 2SK1284, 1284-Z ee SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ee DESCRIPTION PACKAGE DIMENSIONS The 2SK1284/1284-Z is N-channel MOS Field Ef- (in millimeters) fect Transistor designed for solenoid, motor and lamp driver. | 23202 654024, 23202 — FEATURES ; este os#01 feel 0520.1 Low On-state Resistance ae a Rosion) § 0.32 Q (Ves = 10 V, In = 2 A) g 4 z amine AS Rosion) $ 0.40 © (Vos = 4 V, Ip = 2 A) es Lis | a ce o}2 © LowCiss —Cise = 500 pF TYP. A g . 1 te i © Built-in G-S Gate Protection Diode aie (Ml | B | 1, mill; OMAK, : 23/23; O8MAX |} og QUALITY GRADE | WS Standard Ii Dbz 0 car Please refer to “Quality grade on NEC Semiconductor I | a ew Devices” (Document number IEI-1209) published by Gl NEC Corporation to know the specification of quality coh’, grade on the devices and its recommended MP3 1.Gate applications. 2. Drain 3. Source _ ABSOLUTE MAXIMUM RATINGS (Te = 25 °C) “Fin Oran) LL Drain to Source Voltage Voss 100 Vv Gate to Source Voltage Vessiac) +202 «VV Drain (D) Drain Current (DC) Ini) +3.0 A Drain Current (pulse) Ip(pulsey"* = £12 A Total Power Dissipation (Tc = 25 °C)Pt: 20 Ww Total Power Dissipation (Te = 25°C)Prz 1.0 W Gate (G) Pony diode Channel Temperature Teh 150 °c Storage Temperature Tstg -55 to +150 °C Gate Protection diode * PWS 10 ys, Duty Cycle $ 1% Source (S) WL Document No. TC-2383 Date Published July 1993 M Printed in Japan © NEC Corporation 1963

NEC 2SK1284, 1284-Z ELECTRICAL CHARACTERISTICS (Ta = 25 °C) [____cuanacrensne | svweor | wn | We [wax | unt] vesrconomons] (_ ) [ rainseSouce orate nesiance | Amms | | 026 | ose | @ |Varwwneza | [rane Source Ona Resitanco | Ames | | asa | oa | a |Vareovinn2a | [Gatto Sour Guortvorage | Vow | 19 || 28 |v |vari0v,b=1ma__| [Foner Tensor adminance [Iwi | ae ||| 8 |Vactov.na2a | PO [crete Source tsoage Curent [tm | | | 30 | aA |Vanst0v.voeno | [ios Forwaravonsoe «dt ve ff ee | |v [medavero | VY Test Circuit 1: Switching Time TUT: mn Was om PG.@) Ro= 10a I r 9 veal he ~ Baty Gcle 51% Test Circuit 2: Gate Charge en2mh TUT. : Re PG. 500 | T Voo Vv ; 2

NEC 2SK1284, 1284-Z eee EOE TYPICAL CHARACTERISTICS (Ta = 25 °C) we DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs. SAFE OPERATING AREA CASE TEMPERATURE Foot LETT TTT I {TTT EIT £400 1 : . : "LIN aREEE IN 3 z° N a IN é NX a NJ RLEEN TT : s

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NEC 2SK1284, 1284-Z DRAIN TO SOURCE ON-STATE RESISTANCE vs. SOURCE TO DRAIN DIODE g CHANNEL TEMPERATURE FORWARD VOLTAGE gis 0 SS =SSS SS ae on «Pee ries | s LLL bike | 3 Cope Se SSS | CEEErETT)] — | Baadeeaseiass osK <= 2 "EFT TTT || fo) eee co ee ee Eee ee $0 onL LT TTT yT TT tt tT | Fa -50 bY) 50 100 150 0 02 04 06 08 10 12 14 « Tes — Channel Temperature - °C Vso — Source to Drain Voltage - V SOURCE VOLTAGES 70 SWITCHING CHARACTERISTICS WY 1000 1000 pe . Bee ce ee 3; FS BE cu EE Cee em § roo 2 1-H} +H Ss — 5 SSS © soo LU § ae (Be ae _— ee | — er os oo — é FE Ss Leber TTT veo s s0v 3 PT aioe q ein Vestn) = 10.V LT TTT pte te 2 0 Ro= 100 1 10 100 0.1 1 10 Vos - Drain to Source Voltage - V lb — Drain Current - A REVERSE RECOVERY TIME vs. DYNAMIC INPUT CHARACTERISTICS. DIODE FORWARD CURRENT zy 12 200 . [es] | | [| Ye] > , LUT Tin SE Ae Ee 8 lel wae A | | Bog Ceo ; OZ? Anan 5 — ET Cn |W AAYY ee Oe A . 2 oA ae Borer Th PiAT ILL) é Eee oon PUT To NL) dy oL | TTT [aver = 50 Ans , 0 4 8 12 16 0.1 1 1 Qs - Gate Charge - nC |r - Diode Forward Current - A o

NEC 2SK1284, 1284-Z Reference Application note name [No ww) Safe operating area of Power MOS FET. TEA-1034 Application circuit using Power MOS FET. TEA-1035 Quality control of NEC semiconductors devices. TEI-1202 Quality contro! guide of semiconductors devices. Assembly manual of semiconductors devices. 161-1207 WY WY a VY

NEC 2SK1284, 1284-Z - [MEMO] wy)

NEC 2SK1284, 1284-Z [MEMO] . VY No part of this document may be copied or reproduced in any form or by any means without the prior written wy consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact Vy our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 WY