K1271

2SK1271 NEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. PT 98:

. , | = cy N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR SS SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE eee

DESCRIPTION

een TENSIONS The 2SK1271 is N-channel MOS Field Effect Transistor de- signed for high voltage switching applications. 93.2402 * a7max | FEATURES oo) RBZ MAX 15 © High Voltage Rating Voss = 1 400 V ~ bal — 3 © Low On-state Resistance TTT Ei Rosion) = 4.0 2 MAX. (Ves = 10 V, lo =3 A) 2 | ~ © LowCiss —Ciss = 1 800 pF TYP. | BS

2 QUALITY GRADE

2 Standard

S Please refer to “Quality grade on NEC Semiconductor Devices” 2 (Document number IEI-1209) published by NEC Corporation to ~ know the specification of quality grade on the devices and its 22202 1.002 OSIM recommended applications. 06+01 28401 Pe! ° ABSOLUTE MAXIMUM RATINGS (ia ial 3} Gate Maximum Temperatures 3. Source Storage Temperature -55 to +150 °C 4 Fin (Orain} Channel Temperature 150 MAX. °C Drain Maximum Power Dissipation ~ Total Power Dissipation (Tc = 25 °C) 240 Ww Maximum Voltages and Currents (Ta = 25 °C) body diode Voss Drain to Source Voltage 1 400 Vv Gate Voss Gate to Source Voltage £20 v lowe) Drain Current (DC) +5 A Source IDipuise)* Drain Current (pulse) +10 A * PWS 10 ys, Duty Cycle $ 1% Document No. TC-2380 (.D. No. TC-7592) Date Published J M . Printed ndapan © NEC Corporation 1989

ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC symBo. | MIN. | TyP. | MAX. | UNIT | TEST CONDITIONS \\ Gate to Source Cutoff Voltage | vom | 15 | | 35 | v | Vos = 10 V, lo= 1 mA Forward Transfer dmitance [lel [08 ||] sven 20 ena Gate to Source Leakage Curent | lem [sso] | ven 220, Vn 0 Ri=509 Reverse Recovery Time ee Test Circuit 1: Switching Time Re Nes 920 % Tur. Ni Nest Ics [6S ton Ro NwewoFom)| 10%. PG.) R= 102 ied lo 90 % Ves Ne sam! 0 10% tt | 10% o— tevoal| Ite tevorg| | Ite "| "| t or lost t=1 Duty Cycle $ 1% Test Circuit 2: Gate Charge Io=2mA — TUT. Re PG. 50a I Voo

TYPICAL CHARACTERISTICS (Ta = 25 °C) a DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs. ‘SAFE OPERATING AREA CASE TEMPERATURE 240 ze ot tt tT TT TI KORE EnE = 100 1 200 Sy ET TT pot IN ETT is) N & N\\ 3 80 NI $ 160 NI é NX a \\ REL TNE PLEIN 2 40 N & IS A NY 3 NX Pott EEN EI Poet ET TINT 20 ps 1 40 o NI é \\

5 IN N

0 20 40 60 80 100 120 140 160 [) 20 40 60 80 100 120 140 160 Tc Case Temperature - °C Tc- Case Temperature - °C DRAIN CURRENT vs. FORWARD BIAS SAFE OPERATING AREA. DRAIN TO SOURCE VOLTAGE 10 ee 8 10 == aes SSP = 10 sh 7 FSB o0e SSN ot Pulsed Kl SCONE NI KON 8 Ev] < cA TUTTI T SNo Ns TTT < an

1 ROLES USSIN TTT i

re} a a [s} ee ee ee | € 4) LT | § o LOTTI ET & 4 Yr Po HEE 2} fo oo Pre Pose | TTT TT TTT 7 | 1 100 1000 10000 0 10 20 30 40 Vos - Drain to Source Voltage - V Vos — Drain to Source Voltage - V a TRANSFER CHARACTERISTICS, 10 ———— = ——— Pulsed ——= ers eS NS ry <r e cl

2 Et yy TAT ec}

,aSnn) 2s.

64 Ai —\\ | |

7 —— [al ee a A! | A eS 1 a SS A ff A | a e/a | | | | Tey Ty Ett i | Ty | on 0 2 4 6 8 Ves - Gate to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Oe Be 2 Se = oT TT ei = ee ee ee eee

5 Saal

§ sc CC CT CCT § on 2 0.01

5 SSS aa

as Te = 25% U Cee te = 25°C

2 SS SI dee ae

Fool | TTIIMI TF TTT TTT TPT TET TTTT crane! to case 10m 100} 1m 10m 100m 1 70 PW ~ Pulse Width ~ s FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE DRAIN CURRENT @ vs, GATE TO SOURCE VOLTAGE 0 10 g ~ SS) OM a 3 2 z a a & NT § EEE NT 8 to 5 pee Vos = 20 Q 8 pee ee eran eq XP a yf ed

5 B#eeeete ee ey 3

ei: or ee & Cocoon 2 5 cS - 4 a cog PL Ae _ § 01 1 10 z 0 4 8 12 16 20 24 lo Drain Current - A « Ves ~ Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE vs. g RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE 60 > 60 eg ae 4 ri tf td fey § of rin 8 oo p= - eo a | 3* BER 2 gop | TTI TT ai 5 a0 & |_| TTT eer 8 § 30h Dee TT 8 309) I ioe, a a) TP ELT 3 of I 5 Po eo. | TUT TTT 2 Piette LL a 3, eres) CECE 4 oL [TIT 7 |ves=t0v goo g 01 1 10 -50 0 50 100 150 « lo — Drain Current - A Ter - Channel Temperature ~ °C

e DRAIN TO SOURCE ON-STATE RESISTANCE SOURCE TO DRAIN DIODE 7 vs. CHANNEL TEMPERATURE FORWARD VOLTAGE g 10 0 === OT) > EE 2B < —— ae ae Sn an 7 Ae @ 80 j a eS e [7 § a Fi 2 8 feeererry eee ® 60 Z Sorrpeerr) =) 8 40 > 6 SERRE eee hattt] ttl) ot GRRREReEREe 2 al 4 324 oow 2 COP ie PLL ET TT kee 8 reer E -50 0 50 700 750 O19 97 04 06 08 10 12 Ten — Channel Temperature - °C Vso - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS BS Eee tt = iz 1 — sr are ; ERE Sat 2 Ee 5 000 2 PES So _—— oS ee est | i=

8 EERE 2 a lll

rey AS S100; tp bt eg a 6 SS Ee Soo UN Se 2 REECE Se ames ast ees cas TT 2 etic Con — 3 a i nT ll vol LTT TT TTT = 10 1 10 100 1000 1 10 100 Vos - Drain to Source Voltage - V lo — Drain Current - A REVERSE RECOVERY TIME vs. DYNAMIC INPUT CHARACTERISTICS DIODE FORWARD CURRENT 600 12 2.0 "Teal | || A- . SOF eee oe EE Bo eA | lg 7 8 ol OL fa ee Sop) Z| E°™RVELE LL ee Mi sty a3 e ETT ew EE 8 eee ooo PERT 2 HHH fron pj | | | _4, a ac 0 20 40 60 80 100 120 140 0.1 1 10 Qy - Gate Charge - nC Ie - Diode Forward Current - A

Safe operating area of Power MOS FET. TEA-1034 ~ Application circuit using Power MOS FET. TEA-1035 Quality control of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. MEI-1202 Assembly manual of semiconductors devices. IEI-1207

IMEMO}

[MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written _ consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use “Standard” quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. ~ Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6