2SK1169 HITACHI | Alldatasheet
Document overview
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Technical content
Features
- Low on-resistance
- High speed switching
- Low drive current
- No secondary breakdown
- Suitable for switching regulator and DC-DC converter Outline TO-3P 1. Gate 2. Drain (Flange) 3. Source D G S
2SK1169, 2SK1170 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage 2SK1169 V DSS 450 V 2SK1170 500 Gate to source voltage V GSS –30 V Drain current I D 20 A Drain peak current I D(pulse)*1 80 A Body to drain diode reverse drain current IDR 20 A Channel dissipation Pch* 2 120 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW £ 10 ms, duty cycle £ 1% 2. Value at TC = 25°C
2SK1169, 2SK1170 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source 2SK1169 V (BR)DSS 450 — — V I D = 10 mA, VGS = 0 breakdown voltage 2SK1170 500 Gate to source breakdown voltage V(BR)GSS –3 0 ——V I G = –100 mA, VDS = 0 Gate to source leak current IGSS —— –10 mAV GS = –25 V, VDS = 0 Zero gate voltage 2SK1169 IDSS — — 250 mAV DS = 360 V, VGS = 0 drain current 2SK1170 V DS = 400 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static Drain to source 2SK1169 RDS(on) — 0.20 0.25 W ID = 10 A, VGS = 10 V *1 on state resistance 2SK1170 — 0.22 0.27 Forward transfer admittance |yfs| 10 16 — S I D = 10 A, VDS = 10 V *1 Input capacitance Ciss — 2800 — pF V DS = 10 V, VGS = 0, Output capacitance Coss — 780 — pF f = 1 MHz Reverse transfer capacitance Crss — 90 — pF Turn-on delay time t d(on) — 32 — ns I D = 10 A, VGS = 10 V, Rise time t r — 115 — ns R L = 3 W Turn-off delay time t d(off) — 200 — ns Fall time t f —9 0—n s Body to drain diode forward voltage VDF — 1.0 — V I F = 20 A, VGS = 0 Body to drain diode reverse recovery time trr — 500 — ns I F = 20 A, VGS = 0, diF/dt = 100 A/ms Note: 1. Pulse test
2SK1169, 2SK1170 Power vs. Temperature Derating 150 100 Channel Dissipation Pch (W) 50 100 150 Case Temperature TC (°C) Maximum Safe Operation Area 100 0.1 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Drain Current ID (A) 1.0 0.3 2SK1170 2SK1169 Operation in this area is limited by RDS (on) 1 ms µs100 µs Ta = 25°C PW = 10 ms (1Shot)DC Operation (T C = 25 °C) Typical Output Characteristics 0 10 20 30 50 Drain to Source Voltage VDS (V) Drain Current ID (A) 6 V VGS = 4 V Pulse Test 5 V
10 V 7 V
Typical Transfer Characteristics 0 2468 1 0 Gate to Source Voltage VGS (V) Drain Current ID (A) TC = 25°C 75°C –25°C VDS = 20 V Pulse Test
2SK1169, 2SK1170 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 10 A ID = 5 A 20 A 1.0 0.5 0.05 1 2 5 20 50 100 Drain Current ID (A) 0.1 0.2 Pulse Test VGS = 10 V 15 V Static Drain to Source on State Resistance R DS (on) (Ω ) Static Drain to Source on State Resistance vs. Drain Current 1.0 0.8 0.6 0.4 0.2 0 40 80 120 160 Case Temperature TC (°C) –40 Static Drain to Source on State Resistance vs. Temperature VGS = 10 V Pulse Test Static Drain to Source on State Resistance R DS (on) (Ω ) 10 A ID = 20 A 5 A Forward Transfer Admittance vs. Drain Current 0.5 0.2 0.5 1.0 5 10 20 Drain Current ID (A) 1.0 75°C Forward Transfer Admittance yfs (S) TC = 25°C VDS = 20 V Pulse Test –25°C
2SK1169, 2SK1170 Body to Drain Diode Reverse Recovery Time di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test Reverse Drain Current IDR (A) Reverse Recovery Time trr (ns) 5,000 2,000 500 200 100 1,000 0.5 1.0 2 5 10 20 50 Typical Capacitance vs. Drain to Source Voltage 100 01 0 2 0 3 0 4 0 5 0 Drain to Source Voltage VDS (V) Capacitance C (pF) Coss Ciss Crss VGS = 0 f = 1 MHz 1,000 10,000 Dynamic Input Characteristics 500 400 300 200 100 0 40 80 120 160 200 Gate Charge Qg (nc) Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VDD = 100 V V DD = 400 V 250 V 250 V VDS ID = 20 A 400 V VGS 100 V Switching Characteristics 500 100 200 Switching Time t (ns) 0.5 1.0 2 5 10 20 50 Drain Current ID (A) VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% td (off) tr tf td (on)
2SK1169, 2SK1170 Reverse Drain Current vs. Source to Drain Voltage Source to Drain Voltage VSD (V) Reverse Drain Current IDR (A) Pulse Test
5 V, 10 V
VGS = 0, –10 V 1.0 0.1 0.03 0.01 0.3 10 µ 100 µ 1 m 10 m 100 m 1 10 Pulse Width PW (s) θch–c (t) = γS (t) · θch–c θch–c = 1.04°C/W,TC = 25°C PDM PW T D = T PW Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γS (t) TC = 25°C 0.01 0.05 0.02 0.2 0.1 0.5 1Shot Pulse D = 1 Vin Monitor Vout Monitor R L 50 Ω Vin = 10 V D.U.T .VDD = 30 V . Switching Time Test Circuit Vin 10 % 90 % 90 %90 % 10 % td (on) td (off)tr tf Vout 10 % Wavewforms
φ3.2 – 0.2 4.8 – 0.2 1.5 0.3 2.8 0.6 – 0.21.0 – 0.2 15.6 – 0.3 0.5 1.0 5.0 – 0.3 1.6 1.4 Max 2.0 2.0 14.9 – 0.2 3.6 0.9 1.0 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P Conforms 5.0 g Unit: mm
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