2SK1056 RENESAS | Alldatasheet

Document overview

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Technical content

Features

  • Good frequency characteristic
  • High speed switching
  • Wide area of safe operation
  • Enhancement-mode
  • Good complementary characteristics
  • Equipped with gate protection diodes
  • Suitable for audio power amplifier Outline (Package name: TO-3P) 1. Gate 2. Source (Flange) 3. Drain D G S 2 3

2SK1056, 2SK1057, 2SK1058 Rev.2.00 Sep 07, 2005 page 2 of 5 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit 2SK1056 120 2SK1057 140 Drain to source voltage 2SK1058 VDSX 160 V Gate to source voltage V GSS ±15 V Drain current I D 7 A Body to drain diode reverse drain current I DR 7 A Channel dissipation Pch* 1 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at T C = 25°C

Electrical Characteristics

(Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions 2SK1056 120 2SK1057 140 Drain to source breakdown voltage 2SK1058 V(BR)DSX 160 — — V I D = 10 mA, VGS = –10 V Gate to source breakdown voltage V (BR)GSS ±15 — — V I G = ±100 µA, VDS = 0 Gate to source cutoff voltage V GS(off) 0.15 — 1.45 V I D = 100 mA, VDS = 10 V Drain to source saturation voltage V DS(sat) — — 12 V I D = 7 A, VGD = 0 *2 Forward transfer admittance |y fs| 0.7 1.0 1.4 S I D = 3 A, VDS = 10 V *2 Input capacitance Ciss — 600 — pF Output capacitance Coss — 350 — pF Reverse transfer capacitance Crss — 10 — pF VGS = –5 V, VDS = 10 V, f = 1 MHz Turn-on time t on — 180 — ns Turn-off time t off — 60 — ns VDD = 20 V, ID = 4 A Note: 2. Pulse test

2SK1056, 2SK1057, 2SK1058 Rev.2.00 Sep 07, 2005 page 3 of 5 Main Characteristics 50 1000 Case Temperature TC (°C) 150 Channel Dissipation Pch (W) Power vs. Temperature Derating 100 150 Maximum Safe Operation Area Drain Current ID (A) 10 20 50 1.0 100 Drain to Source Voltage VDS (V) 5 500 0.5 200 0.2 ID max (Continuous) Ta = 25°C PW = 10 m s 1 s hot PW = 100 ms 1 shot PW = 1 s 1 shot DC Operat ion (T C = 25 °C) 2SK1056 2SK1057 2SK1058 Typical Output Characteristics Drain to Source Voltage VDS (V) 402010 50 Drain Current ID (A) VGS = 10 V TC = 25°C Pch = 100 W Typical Transfer Characteristics 1.2 Gate to Source Voltage VGS (V) 1.60.80.40 2.0 0.2 0.4 0.6 0.8 1.0 Drain Current ID (A) TC= –25 VDS = 10 V Drain to Source Saturation Voltage vs. Drain Current 1.0 Drain Current ID (A) 20.50.2 5 1.0 0.1 0.5 Drain to Source Saturation Voltage VDS (on) (V) 0.2 0.1 TC = –25 25°C 75°C VGD = 0 Drain to Source Voltage vs. Gate to Source Voltage Gate to Source Voltage VGS (V) 84201 0 Drain to Source Voltage VDS (V) ID = 1 A 5 A TC = 25°C 2 A

2SK1056, 2SK1057, 2SK1058 Rev.2.00 Sep 07, 2005 page 4 of 5 Input Capacitance vs. Gate Source Voltage 1000 500 200 100Input Capacitance Ciss (pF) 0– 2– 4 –10 Gate to Source Voltage VGS (V) –6 –8 VDS = 10 V f = 1 MHz Forward Transfer Admittance vs. Frequency 3.0 1.0 0.3 0.1 0.03 0.01 0.003 10 k 30 k 100 k 300 k 1 M 10 M Frequency f (Hz) 3 M Forward Transfer Admittance yfs (S) TC = 25°C VDS = 10 V ID = 2 A Switching Time vs. Drain Current 500 200 100 0.1 0.2 0.5 1.0 2 10 Drain Current ID (A) Switching Time ton, toff (ns) ton toff Output RL= 2 Ω 20 V 50 Ω Input PW = 50 µs duty ratio = 1 % Switching Time Test Circuit 90 % 10 % 90 % 10 % Output Input t on t off Waveforms

2SK1056, 2SK1057, 2SK1058 Rev.2.00 Sep 07, 2005 page 5 of 5 Package Dimensions φ3.2 ± 0.2 4.8 ± 0.2 1.5 0.3 2.8 0.6 ± 0.21.0 ± 0.2 15.6 ± 0.3 0.5 1.0 5.0 ± 0.3 1.6 1.4 Max 2.0 2.0 14.9 ± 0.2 3.6 0.9 1.0 Package Name PRSS0004ZE-A TO-3P / TO-3PV MASS[Typ.] 5.0gSC-65 RENESAS CodeJEITA Package Code Unit: mm

Ordering Information

Part Name Quantity Shipping Container 2SK1056-E 360 pcs Box (Tube) 2SK1057-E 360 pcs Box (Tube) 2SK1058-E 360 pcs Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan http://www.renesas.com Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Renesas Technology Singapore Pte. Ltd.

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Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 RENESAS SALES OFFICES © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0