2SK1056 HITACHI | Alldatasheet

Document overview

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Technical content

Features

  • Good frequency characteristic
  • High speed switching
  • Wide area of safe operation
  • Enhancement-mode
  • Good complementary characteristics
  • Equipped with gate protection diodes
  • Suitable for audio power amplifier

2SK1056, 2SK1057, 2SK1058 Outline TO-3P 1. Gate 2. Source (Flange) 3. Drain D G S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage 2SK1056 V DSX 120 V 2SK1057 140 2SK1058 160 Gate to source voltage V GSS –15 V Drain current I D 7A Body to drain diode reverse drain current IDR 7A Channel dissipation Pch* 1 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C

2SK1056, 2SK1057, 2SK1058 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source 2SK1056 V (BR)DSX 120 — — V I D = 10 mA, VGS = –10 V breakdown voltage 2SK1057 140 2SK1058 160 Gate to source breakdown voltage V(BR)GSS –1 5 ——V I G = –100 mA, VDS = 0 Gate to source cutoff voltage VGS(off) 0.15 — 1.45 V I D = 100 mA, VDS = 10 V Drain to source saturation voltage VDS(sat) ——1 2V I D = 7 A, VGD = 0 *1 Forward transfer admittance |yfs| 0.7 1.0 1.4 S I D = 3 A, VDS = 10 V *1 Input capacitance Ciss — 600 — pF V GS = –5 V, VDS = 10 V, Output capacitance Coss — 350 — pF f = 1 MHz Reverse transfer capacitance Crss — 10 — pF Turn-on time t on — 180 — ns V DD = 20 V, ID = 4 A, Turn-off time t off —6 0—n s Note: 1. Pulse test

2SK1056, 2SK1057, 2SK1058 50 1000 Case Temperature TC (°C) 150 Channel Dissipation Pch (W) Power vs. Temperature Derating 100 150 Maximum Safe Operation Area Drain Current ID (A) 10 20 50 1.0 100 Drain to Source Voltage VDS (V) 5 500 0.5 200 0.2 ID max (Continuous) Ta = 25°C PW = 10 ms 1 shotPW = 100 ms 1 shot PW = 1 s 1 shot DC Operation (T C = 25°C) 2SK1056 2SK1057 2SK1058 Typical Output Characteristics Drain to Source Voltage VDS (V) 402010 50 Drain Current ID (A) VGS = 10 V TC = 25°C Pch = 100 W Typical Transfer Characteristics 1.2 Gate to Source Voltage VGS (V) 1.60.80.40 2.0 0.2 0.4 0.6 0.8 1.0 Drain Current ID (A) TC= –25°C75 VDS = 10 V

2SK1056, 2SK1057, 2SK1058 Drain to Source Saturation Voltage vs. Drain Current 1.0 Drain Current ID (A) 20.50.2 5 1.0 0.1 0.5 Drain to Source Saturation Voltage VDS (on) (V) 0.2 0.1 TC = –25 25°C 75 VGD = 0 Drain to Source Voltage vs. Gate to Source Voltage Gate to Source Voltage VGS (V) 84201 0 Drain to Source Voltage VDS (V) ID = 1 A TC = 25°C Input Capacitance vs. Gate Source Voltage 1000 500 200 100 Input Capacitance Ciss (pF) 0– 2– 4 –10 Gate to Source Voltage VGS (V) –6 –8 VDS = 10 V f = 1 MHz Forward Transfer Admittance vs. Frequency 3.0 1.0 0.3 0.1 0.03 0.01 0.003 10 k 30 k 100 k 300 k1 M 10 M Frequency f (Hz) 3 M Forward Transfer Admittance  yfs  (S) TC = 25°C VDS = 10 V ID = 2 A

2SK1056, 2SK1057, 2SK1058 Switching Time vs. Drain Current 500 200 100 0.1 0.2 0.5 1.0 2 10 Drain Current ID (A) Switching Time ton,toff (ns) t on t off Output R L= 2 Ω 20 V 50 Ω Input PW = 50µs duty ratio = 1 % Switching Time Test Circuit 90 % 10 % 90 % 10 % Output Input t on t off Waveforms

φ3.2 – 0.2 4.8 – 0.2 1.5 0.3 2.8 0.6 – 0.21.0 – 0.2 15.6 – 0.3 0.5 1.0 5.0 – 0.3 1.6 1.4 Max 2.0 2.0 14.9 – 0.2 3.6 0.9 1.0 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P Conforms 5.0 g Unit: mm

  1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 Copyright © Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. Hitachi Asia Pte. Ltd.

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