K1050G

K1050G BILIN | Alldatasheet

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www.galaxycn.com BLGALAXY ELECTRICAL BL Document Number 0290001 General Description IT(RMS) VDRM IDRM VTM ITSM RS dv/dt di/dt (7) (8) (5) (9) MAX MIN MIN MAX MAX MAX Max 60Hz 50Hz MIN MIN TYP K1050G 1 ±90 95 113 5 150 1.5 20 16.7 0.1 1500 150 K1100G 1 ±90 104 118 5 150 1.5 20 16.7 0.1 1500 150 K1200G 1 ±90 110 125 5 150 1.5 20 16.7 0.1 1500 150 K1300G 1 ±90 120 138 5 150 1.5 20 16.7 0.1 1500 150 K1400G 1 ±90 130 146 5 150 1.5 20 16.7 0.1 1500 150 K1500G 1 ±90 140 170 5 150 1.5 20 16.7 0.1 1500 150 K2000G 1 ±180 190 215 5 150 1.5 20 16.7 0.1 1500 150 K2200G 1 ±180 205 230 5 150 1.5 20 16.7 0.1 1500 150 K2400G 1 ±190 220 250 5 150 1.5 20 16.7 0.1 1500 150 K2500G 1 ±200 240 280 5 150 1.5 20 16.7 0.1 1500 150 K2501G 1(10) ±200 240 280 5 150 6 20 16.7 0.1 1500 150 60 Type SIDAC VBO: 95 - 280 Volts available for custom design applications. Please GALAXY ELECTRICAL holding current of the device. ◇ Switching voltages in the range of 95 V to 330 V. ◇ Sidacs feature glass-passivated junctions that ensure DO - 15 KG --- SERIES IBO mA TYP µA MAX A V V µA k Ω V/µSec A/µSec ◇ A sidac is a silicon bilateral voltage triggered switch, with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac switches on, through a negative resistance region, to a a low on-state voltage. Conduction will continue until the current is interrupted or drops below the minimum consult the factory for more information. IH (3) (4) long term reliability and stable characteristics by creating a rugged, reliable barrier against junction contamination. ◇ Variations of devices covered in this data sheet are VBO (1) VA Dimensions in millimeters

-V +V IT IH IS IBO IDRM VT VDRM VS VBO RS (VBO-VS) (IS-IBO) RS SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: IT RMS Maximum Rated Value at Specified Junction Temperature BLOCKING CAPABILITY MAY BE LOST DURING AND IMMEDIATELY FOLLOWING SURGE CURRENT INTERVAL OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION TEMPERATURE HAS RETURNED TO STEADY-STATE RATED VALUE. 1.0 10 1000100 1.0 2.0 100 4.0 8.0 6.0 Surge Current Duration - Full Cycles Peak Surge (NonRepetitive) On-State Current [ITSM] - Amps www.galaxycn.com BLGALAXY ELECTRICALDocument Number 0290001 2. (9) For best Sidac operation, the load impedance should be near or less than sw itching resistance. RS — Sw itching resistance RS= 50/60 Hz sine w ave (VBO-VS) ◇ All measurements are made at 60Hz w ith a resistive load at an of this catalog. ◇ Junction temperature range (TJ) is -40°C to +125°C. ◇ Lead solder temperature is a maximum of +230°C for 10 seconds ambient temperature of +25°C unless otherw ise specified. VDRM — Repetitive peak off-state voltage (IS-IBO) VBO — Breakover voltage 50/60 Hz sine w ave max imum; ≥ 1/16" (1.59mm ) from case. ◇ Storage temperature range (TS) is -65°C to +150°C . ◇ The case (TC) or lead (TL) temperature is measured as show n on the dimensional outline draw ings. See “Package Dimensions” section VTM — Peak on-state voltage, IT = 1 Amp General Notes IDRM — Repetitive peak off-state current 50/60 Hz sine w ave; V = VDRM (5) See Figure 9.1 for more than one full cycle rating. IH — Dynamic holding current 50/60 Hz sine w ave; R = 100Ω (6) RθJA Type 41 is 70° C/W. IT(RM S) — On-state RMS current TJ ≤ 125°C 50/60 Hz sine w ave (7) TL ≤ 100°C ITSM — Peak one cycle surge current 50/60 Hz sine w ave (nonrepetitive) (8) See Figure 9.14 for clarification of Sidac operation. Specific Tes t Conditions Electrical Specification Notes di/dt — Critical rate-of-rise of on-state current (1) See Figure 9.5 for VBO change vs junction temperature. 100°C (3) See Figure 9.2 for IH vs case temperature. IBO — Breakover current 50/60 Hz sine w ave (4) See Figure 9.13 for test circuit. (2) See Figure 9.6 for IBO vs junction temperature. dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM; TJ ≤ RATINGS AND CHARACTERISTIC CURVES KG --- SERIES V-I CHARACTERISTICS FIG.1-- PEAK SURGE CURRENT vs SURGE CURRENT FFFFFFFF DURATION

CURRENT WAVEFORM: Sinusoidal - 60 Hz LOAD: Resistive or Inductive FREE AIR RATING RMS On-State Current [IT(RMS)] - Amps Maximum Allowable Ambient Temperature (TA) - ° C 1.5 1.0 2.0 -40 -15 +25 +65 +105 +125 Case Temperature (TC) - ° C IH(TC=25° C) IH Ratio of www.galaxycn.com BLGALAXY ELECTRICALDocument Number 0290001 3. RATINGS AND CHARACTERISTIC CURVES KG --- SERIES FIG.2 -- NORMALIZED DC HOLDING CURRENT vs FFFFFFFFFFF CASE/LEAD TEMPERATURE FIG.3-- REPETITIVE PEAK ON-STATE CURRENT (ITRM) GGGGvs PULSE WIDTH at VARIOUS FREQUENCIES FIG.4 -- MAXIMUM ALLOWABLE AMBIENT FFFFFFFFFF FFTEMPERATURE vs ON-STATE CURRENT FIG.5 -- NORMALIZED VBO CHANGE vs JUNCTION JJJJJJJJJJJ TEMPERATURE FIG.6 -- NORMALIZED REPETITIVE PEAK BREAKOVER CURRENT vs JUNCTION TEMPERATURE FIG.7 -- ON-STATE CURRENT vs ON-STATE VOLTAGE GGGGGGG(TYPICAL) 0.6 0.8 100 200 400 600 46 8 2 1 6482 6 48 2 x 10-3 1 x 10-2 1 x 10-1 f=20 kHz f=10 kHz f=5 kHz f=1 kHz f=100 kHz f=10 kHz Repetition Frequency f=5 Hz Non- Repeated to l/f Current VBO Firing ITRM Waveform di/dt Limit Line TJ=125o C Max Pulse base width (to) - mSec. Repetitive Peak On-State Current (ITRM) - Amps -12 -10 -40 -20 0 +20 +40 +60 +80 +120+100 +140+25 Percentage of VBO Change - % Junction Temperature (TJ) - ° C 20 40 50 60 80 90 100 120110 1307030 Repetitive Peak Breakover Current (IBO) Multiplier Junction Temperature (TJ) - ° C V=VBO Positive or Negative Instantaneous On-State Current (iT) - Amps Positive or Negative Instantaneous On-State Voltage (VT) - Volts 1.2 1.61.4 1.8 TL =25° C Kxx01G

100Ω SWITCH TO TEST IN EACH DIRECTION DEVICE UNDER TEST SCOPE 100-250 VAC 60 Hz IPK IH SCOPE INDICATIONS 100Ω 10μF 250V 10μF 450V 120VAC 60Hz XENON LAMP K2200G 4KV SIDAC 200- 400V TRIGGER TRANSFORMER 20:1 20MΩ .01μF 400V

24 VAC

• + 10μF 4.7μF 100V 4.7 kΩ 1/2W 200V K1200E SIDAC H.V. IGNITOR 4.7μF 100V 1.2μF 100-250 VAC 60 Hz 100-250 VAC 60 Hz SIDACSCR www.galaxycn.com BLGALAXY ELECTRICALDocument Number 0290001 4. FIG.13 -- DYNAMIC HOLDING CURRENT TEST CIRCUIT FOR SIDACS RATINGS AND CHARACTERISTIC CURVES KG --- SERIES FIG.8 -- POWER DISSIPATION (TYPICAL) vs ON-STATE MMMMMMMM CURRENT FIG.9 -- COMPARISON OF SIDAC vs SCR FIG.10 -- LGNITOR CIRCUIT (LOW VOLTAGE INPUT) FIG.11 -- TYPICAL HIGH PRESSURE SODIUM LAMP FIRING CIRCUIT FIG.12 -- XENON LAMP FLASHING CIRCUIT 1.8 1.6 1.2 1.4 0.6 0.8 1.0 01 . 0 2.0 2.2 0.8 Average On-State Power Dissipation [PD(AV)] - Watts RMS On-State Current [IT(RMS)] - Amps 0.4 0.2 0.60.4 0.2 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: See Figure 9.15 Kxx01G

120 VAC

0.47μF 400V SIDAC 3.3 kΩ LAMP 16 mH

220 VAC

SIDAC 0.22μF 7.5 kΩ LAMP BALLAST

50Ω 50Ω VBB1=10V VBB2=0 2N6127 (or equivalent) (See Note B) RBB2=100Ω VCE MONITOR TIP-47 VCC=20V RS=0.1Ω IC MONITOR 100mH SIDAC VBO 0.63 A 5 V 0 V INPUT VOLTAGE COLLECTOR CURRENT 10 V VCE(sat) tw≈3 ms (See Note A) tw 100 mS COLLECTOR CURRENT RBB1=150Ω VOLTAGE AND CURRENT WAVEFORMSTEST CIRCUIT NOTE A: Input pulse width is increased until ICM = 0.63A. NOTE B: Sidac (or Diac or series of Diacs) chosen so that VBO is just below VCEO rating of transistor to be protected. The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the transistor could be destroyed. DC(IN)V ≥VBO (a) Circuit R Vc C IL SIDAC RL (b) Waveforms VBO VC IL t t VIN-VTM Rmin≥ IH(MIN) VIN-VBO Rmax≤ IBO 100-250 VAC 60Hz IH VBO LOAD VBO VBO 120-145° CONDUCTION ANGLE LOAD CURRENT IH IH www.galaxycn.com BLGALAXY ELECTRICALDocument Number 0290001 5. FIG.16 -- SIDAC ADDED TO PROTECT TRANSISTOR FOR TYPICAL TRANSISTOR INDUCTIVE VVVVVVVVVVVVVVVVVLOAD SWITCHING REQUIREMENTS RATINGS AND CHARACTERISTIC CURVES KG --- SERIES FIG.14 -- BASIC SIDAC CIRCUIT FIG.15 -- RELAXATION OSCILLATOR USING a SIDAC