K102P ETC1 | Alldatasheet
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TELEFUNKEN ELECTRONIC 98) D M® 8920056 0007751 3 MMALGG a , K1o2P_ | TELEPUNKEN electronic i Creative Technologies 7 i ee lays | Optically Coupled Isolator ‘ Construction: Emitter: GaAs {R Emitting Diode j . Detector: Silicon NPN Epitaxial Planar Phototransistor i Applications: Gelvanically separated circuits, . | non-interacting switches } . i . a Features: ‘ © DCisolation test voltage V,, 4.4 kV © Current transfer ratio in groups selected é © Low coupling capacity O, typ. 0.3 pF © Low temperature coefficient of CTR a - @ Test class 26/100/21 DIN 40045 ” Dimensions in mm Pin connections | 88 . ae ET) 84. raat es Fi | } east as l A Orne. ¥ H { 5 184 [Losae 1008 i} (aie a : a 7 . ot . See DIP6 ; ry suse Weight max. 0.7 g : . : : i Absolute maximum ratings f Emitter i Reverse voltage Va 5 7 : Forward current I 50 mA 3 Forward surge current . i t : FP 5104s lism 1.5 A ° Power dissipation . Tomy 25 °C Py 120 mw Junction temperature T 126 °c 71.2/1182,1185 E3 .
1787 B~04 115
TELEFUNKEN ELECTRONIC 58) D MM@ 892009 o007752 5 MEALGG K 102 P T-Y/-22 i Detector ‘ Collector base voltage . Veso 50 Vv * Collector emitter voltage Veco 32 v + Emitter collector voltage Veco 7 v : Collector current Ie 50 mA i Peak collector current of f, B : F =05,1,510ms Tom 100 mA L : Power dissipation : Trap 25 °C Py 130 mw a . Junction temperature y 125 °c % . Coupled device : DC isolation test voltage : t=1 min. Vv," 44 v : Total power dissipation : Tam 25 °C Poot . 260 mw : Ambient temperature range Tren —55...4100 *c i Storage temperature range La —55...4126 °C : Soldering temperature ; 2mm from case, tS 10s Tra 260 *c 3 Electrical characteristics Min. ‘Typ. Max. 5 Tam = 25 °C Emitter . Forward voltage : 1,=50 mA Ve 1.25 1. ov Breakdown voltage mG Ig= 100 pA Vien) 5 v i Junction capacitance Es Va 0, f= 1 MHz G 50 pF Detector ‘ : «Collector emitter breakdown voltage ; ign Tima Yeonyceo 32 v : Collector dark currant : Vog™= 20 V, p= 0, E=0 heeo 200 nA Vege 10V, f= 0, E= 0 leo 5O nA Veg" 10V, f= 0, E=0 ee 20 A Collector emitter saturation voltage : Ig= TMA, f= 10 mA Vessar 03 v “related to standard climate 23/50 DIN 50014 16 1788 B-05
En enna a ane eR Re ee cece TELEFUNKEN ELECTRONIC 58D) D mm 892005 0007753 7 MMALGG 7-21-83 .. Min, Typ. Max. ‘. Coupled device : DC isolation test voltage tet min . v," 44 wv Isolation resistance Vio™ 1 kV, 40% relative humidity a,” 10 Q Collector curtent Veg 5 V, [p= 10 mA K102P1 |, 2 6 mA KiozP2 4 8 mA K102P3 6.2 125 mA . = 2mA K102P2 04 1 mA “pe K102P3 i, 06 1200 mA : . Current transfer ratio : Vog= 6 V, [p= 10 mA, K102P1 CTR 20 60 % K102P2 CIR 40 80 % K102P3 CIR 62 125 % = 2mA K102P2 CIR 20 50 % K102P3 CIR 25 60 % Cut-off frequency Ve_= 5 V, p= 10 mA, R, = 1002 f 110 kHz Coupling capacitance t= 1MHz Q 0.3 pF ‘ Switching characteristics Vg= 5 V, [p= 6 mA, R, = 100 0, see Fig, 1 Delay time ty 4.0 ps Rise time t 7.0 ps Turn-on time bg 11.0 ~. wo, Storage time t 0.3 Hs Fall time t 6.7 bs Turn-off time tote 7.0 ps Vg =5 V, [p= 10 mA, R, =1 ka, see Fig. 2 + Turn-on time ton 25 ¥s Tum-off time tout 42.5 bs ke +5 . J It ka I= mA; adjusted through Pg =500 | 7 ‘input amplitude : i= TAO LI =50ps . * Channel t Oscilloscope Channel tt Az IMQ . arune + 800 1000 OS 20pF Fig. 1 Test circuit, non saturated operation "related to standard climate 23/50 DIN 50014
1789 B-06 117
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1790 B-07
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