K101 KODENSHI | Alldatasheet

Document overview

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Technical content

The K101 has one channel in a 4-pin mini-flat SMD package. The K102 has two channels in a 8-pin mini-flat SMD package. The K104 has four channels in a 16-pin mini-flat SMD package.

FEATURES

  • Mini-Flat Package
  • Collector-Emitter Voltage : Min.50V
  • Current Transfer Ratio : Min.50% (at IF=5mA, VCE=5V)
  • Electrical Isolation Voltage : AC3750Vrms

APPLICATIONS

  • Programmable Logic Control
  • Microcomputer K101 • K102 • K104 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor per a channel.
  • Interface between two circuits of different potential
  • Cordless Phone DIMENSION (Unit : mm) K101 K102 K104 Orientation Mark 4.4 0.2 2.54 0.25 3.6 0.2 0.4 0.1 0.1 0.1 2.5 0.2 5.2 0.2 7.0 0.5 0.4Min. 0.15 0.05 1 2 4 3 4.4 0.22.5 0.2 8.7 0.2 8 6 57 2 3 41 Orientation Mark 0.15 0.05 0.4Min. 7.0 0.5 5.2 0.2 2.54 2.54 4.4 0.2 18.8 0.2 15 13 11 91416 12 10 432 65 7 8 Orientation Mark 5.2 0.2 7.0 0.5 0.4Min. 2.5 0.2 0.1 0.12.54 2.54 0.15 0.05

MAXIMUM RATINGS (Ta=25¡É ) *1. Input current with 100µs pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec ELECTRO-OPTICAL CHARACTERISTICS (Ta=25¡É , unless otherwise noted) IF=10mA VR=5V V=0, f=1MHz IC=0.5mA IE=0.1mA IF=0, VCE=24V VCE=0, f=1MHz IF=5mA, VCE=5V IF=5mA, IC=1mA V=0, f=1MHz VCE=5V, RL=100 IC=2mA *4. CTR=(IC/IF) X 100 (%) Parameter Symbol Rating Unit Input Forward Current IF Reverse Voltage VR Peak Forward Current*1 IFP Power Dissipation PD 50 mA 5 V 1 A 70 mW Output Collector-Emitter Breakdown Voltage BVCEO 50 Emitter-Collector Breakdown Voltage BVECO 6 Collector Current IC 50 V V mA Collector Power Dissipation PC 150 mW Input to Output Isolation Voltage*2 Viso AC3750 Vrms Storage Temperature Tstg -55~+125 ¡É Operating Temperature Topr -30~+100 ¡É Total Power Dissipation Ptot 200 mW Collector Dark Current Input-Output Isolation Resistance Input-Output Capacitance Capacitance Current Transfer Ratio*4 Collector-Emitter Saturation Voltage Input Output Forward Voltage Capacitance Reverse Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage 600- tr -RIO 0.15 1011 CIO V V nA- pF V pF pF Symbol VF IR Max. 1.30 10 §Ë 100 Unit. 0.4 - §Ù 3- - §Á Typ. 1.15 V K101 • K102 • K104 Parameter Lead Soldering Temperature*3 Tsol 260 ¡É - §Á Min. 10- tf CT BVCEO CTR VCE(SAT) BVECO ICEO CCE RH=40~60%, V=500V Coupled Rise Time Fall Time Condition

K101 • K102 • K104 Ambient Temperature Ta (¡É ) Forward Current vs. Ambient Temperature -20 0 20 Forward Current IF (mA) Collector Current vs. Forward Current Forward Current IF (mA) 40 60 100 0.1 1 Collector Current IC (mA) 0.1 100 Collector-Emitter Voltage VCE (V) Collector Current vs. Collector-Emitter Voltage 0 2 4 6 Collector Current IC (mA) 8 10 Dark Current ICEO (§Ë) Ambient Temperature Ta (¡É ) 0.001 0.01 4020 0.1 8060 100 Dark Current vs. Ambient Temperature Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation PC (mW) -20 100 150 200 250 Ambient Temperature Ta (¡É ) 200 6040 10080 100 0.001 0.01 Collector Current IC (mA) 0 4020 8060 Ambient Temperature Ta (¡É ) Collector Current vs. Ambient Temperature 100 Output Input Test Circuit VIN R RL VO VCC Wave form 10% 90% Switching Time Test Circuit tr tf -20 Ta=25¡É IF=30mA IF=20mA IF=10mA IF=5mA IF=1mA PC(max.) VCE=24V IF=20mA IF=10mA IF=5mA IF=1mA Ta=25¡É VCE =5V Forward Voltage VF (V) 0.4 Forward Current vs. Forward Voltage Forward Current IF (mA) 100 1.6 Ta=25¡É Ta=70¡É 0.8 Ta=-55¡É 1.2 Response Time vs. Load Resistance Load Resistance RL (§Ú) 500 100 0.1 Response Time tr, tf (¥ìs) 0.1 VCE=5V IC=2mA Ta=25¡É tr 1.0 2.0 tf