IKW08T120_13 INFINEON | Alldatasheet
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TrenchStop® Series IFAG IPC TD VLS 1 Rev. 2.4 12.06.2013 Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP305D Short circuit withstand time – 10s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package IKW08T120 1200V 8A 1.7V 150C K08T120 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VC E 1200 V DC collector current TC = 25C TC = 100C IC A Pulsed collector current, tp limited by Tjmax IC p ul s 24 Turn off safe operating area VCE 1200V, Tj 150C - 24 Diode forward current TC = 25C TC = 100C IF Diode pulsed current, tp limited by Tjmax IF p ul s 24 Gate-emitter voltage VG E 20 V Short circuit withstand time2) VGE = 15V, VCC 1200V, Tj 150C tS C 10 s Power dissipation TC = 25C Pt o t 70 W Operating junction temperature Tj -40...+150 C Storage temperature Ts t g -55...+150
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO-247-3
TrenchStop® Series IFAG IPC TD VLS 2 Rev. 2.4 12.06.2013 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
TrenchStop® Series IFAG IPC TD VLS 3 Rev. 2.4 12.06.2013 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case Rt h J C 1.7 K/W Diode thermal resistance, junction – case Rt h J C D 2.3 Thermal resistance, junction – ambient Rt h J A 40 Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value Unitmin. typ. max. Static Characteristic Collector-emitter breakdown voltage V( B R ) C E S VG E=0V, IC =0.5mA 1200 - - V Collector-emitter saturation voltage VC E ( s a t ) VG E = 15V, IC =8A Tj =25 C Tj =125 C Tj =150 C 1.7 2.0 2.2 2.2 Diode forward voltage VF VG E=0V, IF =8A Tj =25 C Tj =125 C Tj =150 C 1.7 1.7 1.7 2.2 Gate-emitter threshold voltage VG E ( t h) IC =0.3mA, VC E=VG E 5.0 5.8 6.5 Zero gate voltage collector current IC E S VC E=1200V , VG E=0V Tj =25 C Tj =150 C 0.2 2.0 mA Gate-emitter leakage current IG E S VC E=0V, VG E=20V - - 100 nA Transconductance gf s VC E=20V, IC =8A - 5 - S Integrated gate resistor RG i n t none Ω
TrenchStop® Series IFAG IPC TD VLS 4 Rev. 2.4 12.06.2013 Dynamic Characteristic Input capacitance Ci s s VC E=25V, VG E=0V, f=1MHz - 600 - pF Output capacitance Co s s - 36 - Reverse transfer capacitance Cr s s - 28 - Gate charge QG a t e VC C=960V, IC =8A VG E=15V - 53 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13 - nH Short circuit collector current1) IC ( S C ) VG E=15V, tS C10 s VC C = 600V, Tj = 25 C - 48 - A Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value Unitmin. typ. max. IGBT Characteristic Turn-on delay time td ( o n ) Tj =25 C, VC C=600V, IC =8A, VG E=0/15V, RG =81 , 2 )=180nH, 2 )=39pF Energy losses include “tail” and diode reverse recovery. - 40 - ns Rise time tr - 23 - Turn-off delay time td ( o f f ) - 450 - Fall time tf - 70 - Turn-on energy Eo n - 0.67 - mJ Turn-off energy Eo f f - 0.7 - Total switching energy Et s - 1.37 - Anti-Parallel Diode Characteristic Diode reverse recovery time tr r Tj =25 C, VR =600V, IF =8A, di F /dt =600A/ s - 80 - ns Diode reverse recovery charge Qr r - 1.0 - µC Diode peak reverse recovery current Ir r m - 13 - A Diode peak rate of fall of reverse recovery current during tb di r r/dt - 420 - A/s 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.
TrenchStop® Series IFAG IPC TD VLS 5 Rev. 2.4 12.06.2013 Switching Characteristic, Inductive Load, at Tj=150 C Parameter Symbol Conditions Value Unit min. typ. max. IGBT Characteristic Turn-on delay time td ( o n ) Tj =150 C, VC C=600V, IC =8A, VG E=0/15V, RG = 81 , 1 )=180nH, 1 )=39pF Energy losses include “tail” and diode reverse recovery. - 40 - ns Rise time tr - 26 - Turn-off delay time td ( o f f ) - 570 - Fall time tf - 140 - Turn-on energy Eo n - 1.08 - mJ Turn-off energy Eo f f - 1.2 - Total switching energy Et s - 2.28 - Anti-Parallel Diode Characteristic Diode reverse recovery time tr r Tj =150 C VR =600V, IF =8A, di F /dt =600A/ s - 200 - ns Diode reverse recovery charge Qr r - 2.3 - µC Diode peak reverse recovery current Ir r m - 20 - A Diode peak rate of fall of reverse recovery current during tb di r r/dt - 320 - A/s 1) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.
TrenchStop® Series IFAG IPC TD VLS 14 Rev. 2.4 12.06.2013
TrenchStop® Series IFAG IPC TD VLS 15 Rev. 2.4 12.06.2013 I r r m 90% I r r m 10% Ir r m di /dt F t r r I F i,v tQ S Q F t S t F V R di /dt r r Q =Q Q r r S F t =t t r r S F Figure C. Definition of diodes switching characteristics p(t) 1 2 n T (t)j n n TC r r r r r r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L =180nH and Stray capacity C =39pF. Figure A. Definition of switching times Figure B. Definition of switching losses
TrenchStop® Series IFAG IPC TD VLS 16 Rev. 2.4 12.06.2013 Published by Infineon Technologies AG
81726 Munich, Germany
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