FKN08PN40 FAIRCHILD | Alldatasheet
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©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FKN08PN40 Rev. A FKN08PN40 TRIAC (Silicon Bidirectional Thyristor) tm August 2006 FKN08PN40 TRIAC (Silicon Bidirectional Thyristor) Application Explanation
- Switching mode power supply, light dimmer, electric flasher unit, hair drier
- TV sets, stereo, refrigerator, washing machine
- Electric blanket, solenoid dr iver, small motor control
- Photo copier, electric tool Absolute Maximum Ratings Ta = 25°C unless otherwise noted Thermal Characteristics Note1: Infinite cooling condition. Note2: JESD51-10 ( Test Borad: FR4 3.0”*4.5”*0.062”, Minimum land pad) Symbol Parameter Value Rating Units VDRM VRRM Peak Repetitive Off-State Voltage Sine Wave 50 to 60Hz, Gate Open 400 V IT (RMS) RMS On-State Current Commercial frequency, sine full wave 360° conduction, Tc= 70 ℃ 0.8 A ITSM Surge On-State Current Sinewave 1 full cycle, peak value, non-repetitive 50Hz 8 A 60Hz 9 A I2t I2t for Fusing Value corresponding to 1 cycle of halfwave, surge on-state current, tp=8.4ms
0.33 A2s
PGM Peak Gate Power Dissipation 5 W PG (AV) Average Gate Power Dissipation 0.1 W VGM Peak Gate Voltage 5 V IGM Peak Gate Current 1 A TJ Junction Temperature - 40 ~ 125 °C TSTG Storage Temperature - 40 ~ 125 °C Symbol Parameter Value Units RθJC Thermal Resistance, Junction to Case (note1) 40 °C/W RθJA Thermal Resistance, Junction to Ambient (note2) 160 °C/W 1: T1 2: Gate 3: T2 1 2 3 TO-92
2 www.fairchildsemi.com FKN08PN40 Rev. A FKN08PN40 TRIAC (Silicon Bidirectional Thyristor) Electrical Characteristics TC = 25°C unless otherwise noted Commutation dv/dt Test Symbol Parameter Test Condition Min. Typ. Max. Units IDRM IRRM Repetieive Peak Off-State Current VDRM/VRRM applied - - 100 µA VTM On-State Voltage TC=25°C, ITM=1.12A Instantaneous measurement - - 1.8 V VGT Gate Trigger Voltage I VD=12V, RL=100Ω II T2(+), Gate (-) - - 2.0 V III T2(-), Gate (-) - - 2.0 V IGT Gate Trigger Current I VD=12V, RL=100Ω T2(+), Gate (+) - - 5 mA II T2(+), Gate (-) - - 5 mA III T2(-), Gate (-) - - 5 mA VGD Gate Non-Trigger Voltage TJ=125°C, VD=1/2VDRM 0.2 - - V IH Holding Current (I, II,III) VD = 12V, ITM = 200mA - - 15 mA IL Latching Current I, III VD = 12V, IG = 10mA - - 15 mA II - - 20 mA dv/dt(s) Critical Rate of Rise of Off-State Voltag VDRM = 63% Rated, Tj = 125°C, Exponential Rise 20 - - V/µs dv/dt(c) Critical-Rate of Rise of Off-State Com- mutating Voltage (di/dt=-0.7A/mS) 3.0 - - V/µs VDRM (V) Test Condition Commutating voltage and current waveforms (inductive load) FKN08PN40 1. Junction Temperature TJ=125°C 2. Rate of decay of on-state commutating current (di/dt)C 3. Peak off-state voltage VD = 200V Supply Voltage Main Current Main Voltage Time Time Time VD (dv/dt)C (di/dt)C
3 www.fairchildsemi.com FKN08PN40 Rev. A FKN08PN40 TRIAC (Silicon Bidirectional Thyristor) Quadrant Definitions for a Triac Package Marking and Ordering Information Device Marking Device Package Packing Tape Width Quantity K08PN40 FKN08PN40 TO-92 Bulk -- -- T2 Positive T2 Negative Quadrant II Quadrant I Quadrant III Quadrant IV IGT -+ I GT (+) T2 (+) IGT GATE (+) T2 (-) IGT GATE (-) T2 (+) IGT GATE (-) T2 (-) IGT GATE
5 www.fairchildsemi.com FKN08PN40 Rev. A FKN08PN40 TRIAC (Silicon Bidirectional Thyristor) Typical Performance Characteristics (Continued) Figure7. Typical Holding Current vs Junction Temperature Figure8. Junction to Case Thermal Resistance -40 0 40 80 120 IH[mA],Holding Current TJ[ o C], Junction Temperature 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Junction to Case Thermal Resistance, [ o C/W] Time, [S]
6 www.fairchildsemi.com FKN08PN40 Rev. A FKN08PN40 TRIAC (Silicon Bidirectional Thyristor) Package Dimension 0.46 ±0.10 1.27TYP (R2.29) 3.86MAX [1.27 ±0.20] 1.27TYP [1.27 ±0.20] 3.60 ±0.20 14.47 ±0.40 1.02 ±0.10 (0.25) 4.58 ±0.20 4.58 +0.25 –0.15 0.38 +0.10 –0.05 0.38 +0.10 –0.05 TO-92
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FKN08PN40 TRIAC (Silicon Bidirectional Thyristor) DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERV ES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LI CENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE- CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in th e labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datas heet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ Wire™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FAST FASTr™ FPS™ FRFET™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™ Rev. I20 7 www.fairchildsemi.com FKN08PN40 Rev. A FKN08PN40 TRIAC (Silicon Bidirectional Thyristor)