SKP06N60_V01 INFINEON | Alldatasheet
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1 Rev. 2.4 12.06.2013 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10s Designed for: Motor controls, Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability Very soft, fast recovery anti-parallel Emitter Controlled Diode Isolated TO-220, 2.5kV, 60s Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat) Tj Marking Package SKP06N60 600V 6A 2.3V 150C K06N60 PG-TO-220-3-1 SKA06N60 600V 5A 2.3V 150C K06N60 PG-TO-220-3-31 / -111
1 J-STD-020 and JESD-022
(TO-220AB) (FullPAK) G C E
2 Rev. 2.4 12.06.2013 Maximum Ratings Parameter Symbol Value Unit SKP06N60 SKA06N60 Collector-emitter voltage VC E 600 600 V DC collector current TC = 25C TC = 100C IC 6.9 5.0 A Pulsed collector current, tp limited by Tjmax IC p ul s 24 24 Turn off safe operating area VCE 600V, Tj 150C - 24 24 Diode forward current TC = 25C TC = 100C IF Diode pulsed current, tp limited by Tjmax IF p ul s 24 24 Gate-emitter voltage VG E 20 20 V Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150C tS C 10 10 s Power dissipation TC = 25C Pt o t 68 32 W Mounting Torque, Screw: M2.5 (Fullpak), M3 (TO220)3 M 0.6 0.5 Nm Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Ts 260 260 °C 2 Allowed number of short circuits: <1000; time between short circuits: >1s.
3 Maximum mounting processes: 3
3 Rev. 2.4 12.06.2013 Thermal Resistance Parameter Symbol Conditions Max. Value Unit SKP06N60 SKA06N60 Characteristic IGBT thermal resistance, junction – case Rt h J C 1.85 3.9 K/W Diode thermal resistance, junction – case Rt h J C D 3.5 5.0 Thermal resistance, junction – ambient Rt h J A PG-TO-220-3-1 Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V( B R ) C E S VG E=0V, IC =500 A 600 - - V Collector-emitter saturation voltage VC E ( s a t ) VG E = 15V, IC =6A Tj =25 C Tj =150 C 1.7 2.0 2.3 2.4 2.8 Diode forward voltage VF VG E=0V, IF =6A Tj =25 C Tj =150 C 1.2 1.4 1.25 1.8 1.65 Gate-emitter threshold voltage VG E ( t h) IC =250 A, VC E=VG E 3 4 5 Zero gate voltage collector current IC E S VC E=600V, VG E=0V Tj =25 C Tj =150 C 700 Gate-emitter leakage current IG E S VC E=0V, VG E=20V - - 100 nA Transconductance gf s VC E=20V, IC =6A - 4.2 - S Dynamic Characteristic Input capacitance Ci s s VC E=25V, VG E=0V, f=1MHz - 350 420 pF Output capacitance Co s s - 38 46 Reverse transfer capacitance Cr s s - 23 28 Gate charge QG a t e VC C=480V, IC =6A VG E=15V - 32 42 nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 7 - nH Short circuit collector current2) IC ( S C ) VG E=15V, tS C10 s VC C 600V, Tj 150 C - 60 - A 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
4 Rev. 2.4 12.06.2013 Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value Unitmin. typ. max. IGBT Characteristic Turn-on delay time td ( o n ) Tj =25 C, VC C=400V, IC =6A, VG E=0/15V, RG =50, 1 ) =180nH, 1 ) =250pF Energy losses include “tail” and diode reverse recovery. - 25 30 ns Rise time tr - 18 22 Turn-off delay time td ( o f f ) - 220 264 Fall time tf - 54 65 Turn-on energy Eo n - 0.110 0.127 mJ Turn-off energy Eo f f - 0.105 0.137 Total switching energy Et s - 0.215 0.263 Anti-Parallel Diode Characteristic Diode reverse recovery time tr r tS tF Tj =25 C, VR =200V, IF =6A, di F /dt =200A/ s 200 183 ns Diode reverse recovery charge Qr r - 200 - nC Diode peak reverse recovery current Ir r m - 2.8 - A Diode peak rate of fall of reverse recovery current during tb di r r/dt - 180 - A/s Switching Characteristic, Inductive Load, at Tj=150 C Parameter Symbol Conditions Value Unitmin. typ. max. IGBT Characteristic Turn-on delay time td ( o n ) Tj =150 C VC C=400V, IC =6A, VG E=0/15V, RG =50 , 1 )=180nH, 1 )=250pF Energy losses include “tail” and diode reverse recovery. - 24 29 ns Rise time tr - 17 20 Turn-off delay time td ( o f f ) - 248 298 Fall time tf - 70 84 Turn-on energy Eo n - 0.167 0.192 mJ Turn-off energy Eo f f - 0.153 0.199 Total switching energy Et s - 0.320 0.391 Anti-Parallel Diode Characteristic Diode reverse recovery time tr r tS tF Tj =150 C VR =200V, IF =6A, di F /dt =200A/ s 290 263 ns Diode reverse recovery charge Qr r - 500 - nC Diode peak reverse recovery current Ir r m - 5.0 - A Diode peak rate of fall of reverse recovery current during tb di r r/dt - 200 - A/s 1) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.
13 Rev. 2.4 12.06.2013 PG-TO220-3-1
14 Rev. 2.4 12.06.2013 Please refer to mounting instructions
15 Rev. 2.4 12.06.2013 I r r m 90% I r r m 10% Ir r m di /dt F t r r I F i,v tQ S Q F t S t F V R di /dt r r Q =Q Q r r S F t =t t r r S F Figure C. Definition of diodes switching characteristics p(t) 1 2 n T (t)j n n TC r r r r r r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L =180nH and Stray capacity C =250pF. Figure A. Definition of switching times Figure B. Definition of switching losses
16 Rev. 2.4 12.06.2013 Published by Infineon Technologies AG
81726 Munich, Germany
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