K03H1202

IKA03N120H2 INFINEON | Alldatasheet

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Technical content

Power Semiconductors 1 Mar-04, Rev. 2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode G C E

• Designed for: - TV – Horizontal Line Deflection
• 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Integrated anti-parallel diode - E off optimized for IC =3A P-TO220-3-31 (FullPAK) P-TO220-3-34 (FullPAK)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE I C Eoff Tj Marking Package Ordering Code IKA03N120H2 1200V 3A 0.15mJ 150°C K03H1202 P-TO-220-3-31 Q67040-S4649 IKA03N120H2 1200V 3A 0.15mJ 150°C K03H1202 P-TO-220-3-34 Q67040-S4655 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V Triangular collector peak current (VGE = 15V) TC = 100°C, f = 32kHz IC 8.2 Pulsed collector current, tp limited by Tjmax ICpuls 9 Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C - 9 A Diode forward current TC = 25°C TC = 100°C IF 9.6 3.9 Gate-emitter voltage VGE ±20 V Power dissipation TC = 25°C Ptot 29 W Operating junction and storage temperature Tj , Tstg -40...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

Power Semiconductors 2 Mar-04, Rev. 2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 4.3 Diode thermal resistance, junction - case RthJCD 5.8 Thermal resistance, junction – ambient RthJA P-TO-220-3-31 P-TO-220-3-34 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =300 µ A 1200 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =3A Tj =25 °C Tj =150 °C VGE = 10V, IC =3A, Tj =25 °C 2.2 2.5 2.4 2.8 Diode forward voltage VF VGE = 0, IF =3A Tj =25 °C Tj =150 °C 1.55 1.6 Gate-emitter threshold voltage VGE(th) IC =90 µ A, VCE =VGE 2.1 3 3.9 V Zero gate voltage collector current ICES VCE =1200V, VGE =0V Tj =25 °C Tj =150 °C µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =3A - 2 - S Dynamic Characteristic Input capacitance Ciss - 205 - Output capacitance Coss - 24 - Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 7 - pF Gate charge QGate VCC =960V, IC =3A VGE =15V - 8.6 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE P-TO-220-3-1 - nH

Power Semiconductors 3 Mar-04, Rev. 2 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 9.2 - Rise time tr - 5.2 - Turn-off delay time td(off) - 281 - Fall time tf - 29 - ns Turn-on energy Eon - 0.14 - Turn-off energy Eoff - 0.15 - Total switching energy Ets Tj =25 °C, VCC =800V, IC =3A, VGE =0V/15V, RG =82 Ω , Lσ 2) =180nH, Cσ 2) =40pF Energy losses include “tail” and diode 2) reverse recovery. - 0.29 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 52 - ns Diode reverse recovery charge Qrr - 0.23 - µC Diode peak reverse recovery current Irrm - 9.3 - A Diode current slope di F /dt Tj =25 °C, VR =800V, I F =3A, RG =82 Ω - 723 - A/µs Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 9.4 - Rise time tr - 6.7 - Turn-off delay time td(off) - 340 - Fall time tf - 63 - ns Turn-on energy Eon - 0.22 - Turn-off energy Eoff - 0.26 - Total switching energy Ets Tj =150 °C VCC =800V, I C =3A, VGE =0V/15V, RG =82 Ω , Lσ 2) =180nH, Cσ 2) =40pF Energy losses include “tail” and diode 3) reverse recovery. - 0.48 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 112 - ns Diode reverse recovery charge Qrr - 0.52 - µC Diode peak reverse recovery current Irrm - 11 - A Diode current slope di F /dt Tj =150 °C VR =800V, I F =3A, RG =82 Ω - 661 - A/µs 2) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E 2) Commutation diode from device IKP03N120H2

Power Semiconductors 4 Mar-04, Rev. 2 Switching Energy ZVT, Inductive Load Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-off energy Eoff VCC =800V, I C =3A, VGE =0V/15V, RG =82 Ω , C r 2) =4nF Tj =25 °C Tj =150 °C 0.05 0.09 mJ

Power Semiconductors 12 Mar-04, Rev. 2 TO-220-3-31 (FullPAK) dimensions symbol [mm] [inch] min max min max A 10.37 10.63 0.4084 0.4184 B 15.86 16.12 0.6245 0.6345 C 0.65 0.78 0.0256 0.0306 D 2.95 typ. 0.1160 typ. E 3.15 3.25 0.124 0.128 F 6.05 6.56 0.2384 0.2584 G 13.47 13.73 0.5304 0.5404 H 3.18 3.43 0.125 0.135 K 0.45 0.63 0.0177 0.0247 L 1.23 1.36 0.0484 0.0534 M 2.54 typ. 0.100 typ. N 4.57 4.83 0.1800 0.1900 P 2.57 2.83 0.1013 0.1113 T 2.51 2.62 0.0990 0.1030 TO-220-3-34 (FullPAK) dimensions symbol [mm] [inch] min max min max A 10.37 10.63 0.4084 0.4184 B 15.86 16.12 0.6245 0.6345 C 0.65 0.78 0.0256 0.0306 D 2.95 typ. 0.1160 typ. E 3.15 3.25 0.124 0.128 F 6.05 6.56 0.2384 0.2584 G 8.28 8.79 0.326 0.346 H 3.18 3.43 0.125 0.135 K 0.45 0.63 0.0177 0.0247 L 1.23 1.36 0.0484 0.0534 M 2.54 typ. 0.100 typ. N 4.57 4.83 0.1800 0.1900 P 2.57 2.83 0.1013 0.1113 T 2.51 2.62 0.0990 0.1030 U 5.00 typ. 0.197 typ. 1: Gate 2: Collector 3: Emitter

Power Semiconductors 13 Mar-04, Rev. 2 Figure A. Definition of switching times I rrm 90% I rrm 10% I rrm di /dt F t rr I F i,v tQS QF tS tF V R di /dt rr Q= Q Q rr S F t= t trr S F + Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ = 180nH, Stray capacitor Cσ = 40pF, Relief capacitor Cr = 4nF (only for ZVT switching) Figure B. Definition of switching losses öö VDC DUT (Diode) ½ Lσ RG DUT (IGBT) L ½ Lσ Cσ Cr

Power Semiconductors 14 Mar-04, Rev. 2 Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.