JX0805H

JX080 JIEJIE | Alldatasheet

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JIEJIE MICROELECTRONICS CO. , Ltd TEL：+86-513-83639777 - 1 / 5- http://www.jjwdz.com JX080 Series Sensitive gate SCRs Rev.3.0 DESCRIPTION: The JX080 SCR series provide high dv/dt rate with strong resistance to electromagnetic interface. They are especially recommended for use on residual current circuit breaker, straight hair, igniter etc. MAIN FEATURES Symbol Value Unit VDRM/ VRRM 600/800 V IT(RMS) 8 A IGT ≤200 μA ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Storage junction temperature range Tstg -40 - 150 ℃ Operating junction temperature range Tj -40 - 110 ℃ Repetitive peak off-state voltage VDRM 600/800 V Repetitive peak reverse voltage VRRM 600/800 V RMS on-state current TO-251/ TO-252/ TO-220B(Non-Ins) (TC=100℃) IT(RMS) 8 A Non repetitive surge peak on-state current (tp=10ms) ITSM 70 A I2t value for fusing (tp=10ms) I2t 24.5 A2s Critical rate of rise of on-state current dI/dt 50 A/μs Peak gate current (tp=20μs, Tj=110℃) IGM 4 A Peak gate power (tp=20μs, Tj=110℃) PGM 5 W Average gate power dissipation(Tj=110℃) PG(AV) 1 W TO-252 TO-251 K(1) G(3) A(2) TO-220B (Non-Ins) 1 1 3 3

JX080 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 2 / 5- http://www.jjwdz.com ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Value Unit MIN. TYP. MAX. IGT VD=12V RL=33Ω - 50 200 μA VGT - 0.6 0.8 V VGD VD=VDRM Tj=110℃ 0.2 - - V IL IG=1.2 IGT - - 6 mA IH IT=0.05A - - 5 mA dV/dt VD=2/3VDRM Tj=110℃ RGK=1KΩ 10 - - V/μs STATIC CHARACTERISTICS Symbol Parameter Value(MAX) Unit VTM IT=16A tp=380μs Tj=25℃ 1.5 V IDRM VD=VDRM VR=VRRM Tj=25℃ 5 μA IRRM Tj=110℃ 100 μA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case TO-251/ TO-252 20 ℃/W TO-220B(Non-Ins) 15

ORDERING INFORMATION

JieJie Microelectronics Co.,Ltd Sensitive gate SCRs IT(RMS):8A B:TO-220B(Non-Ins) H:TO-251 K:TO-252 05: IGT ≤ 200μA

JX080 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 3 / 5- http://www.jjwdz.com PACKAGE MECHANICAL DATA A D C E H L G B Dimensions Millimeters InchesRef. A B C D E G H L 2.20 0.90 0.55 5.10 2.40 1.20 0.65 5.40 0.086 0.035 0.022 0.200 0.095 0.047 0.026 0.213 0.76 0.85 0.48 6.40 6.70 0.252 0.264 16.0 17.0 0.630 0.669 8.90 9.40 0.350 0.370 0.030 0.033 0.45 0.62 2.30 0.091 1.37 1.50 0.054 0.059 0.018 0.024 0.62 0.019 0.024 6.00 6.20 0.236 0.244 1.80 1.90 0.071 0.075 4° 4°TO-251 A D E H

0.6 MIN

C G B Dimensions Millimeters InchesRef. A B C D E G H 2.20 0.03 0.55 5.10 2.40 0.23 0.65 5.40 0.086 0.001 0.022 0.200 0.095 0.009 0.026 0.213 0.48 6.40 6.70 0.252 0.264 9.35 10.6 0.368 0.417 0.45 0.62 1.37 1.50 0.054 0.059 0.018 0.024 0.62 0.019 0.024 6.00 6.20 0.236 0.244 1.30 1.70 0.051 0.067 4° 4° 4.40 4.70 0.173 0.185 V2 0° 8° 0° 8°V2 TO-252

JX080 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 4 / 5- http://www.jjwdz.com PACKAGE MECHANICAL DATA JIE A F C E G B D H Φ Max 3.8mm Dimensions Millimeters InchesRef. A B C D E F G H 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.60 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 0.339 0.382 10.4 0.378 0.409 6.20 6.60 0.244 0.260 2.65 2.95 0.104 0.116 45° 45° 3.75 0.148 TO-220B Non-Ins FIG.3: Surge peak on-state current versus number of cycles FIG.1 Maximum power dissipation versus RMS on-state current FIG.4: On-state characteristics (maximum values) FIG.2: RMS on-state current versus case temperature IT(RMS) (A)P(w) 0 2 4 6 8 10 IT(RMS) (A) Tc (℃)0 0 25 50 75 100 125 1 10 100 1000 Number of cycles0 ITSM (A) ITM(A) VTM(V) 100 Tj=25℃ Tj=Tjmax TO-251/TO-252/ TO-220B(Non-Ins) α=180° One cycle tp=10ms

JX080 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 5 / 5- http://www.jjwdz.com FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of I t (dI/dt < 50A/μs) tp(ms) 0.01 0.1 1 10 100 ITSM (A), I t (A s) -40 0 40 80 120 IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 2 1000 dI/dt I t IGT IH&IL Tj(℃) ITSM Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the third version which is made in 6-June-2015. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.