JX007U

JX007 JIEJIE | Alldatasheet

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JIEJIE MICROELECTRONICS CO. , Ltd TEL：+86-513-83639777 - 1 / 4- http://www.jjwdz.com JX007 Series 0.8A Sensitive SCRs Rev.2.0 DESCRIPTION: The JX007 SCR series provide high dv/dt rate with strong resistance to electromagnetic interface. They are especially recommended for use on residual current circuit breaker, straight hair, igniter etc. MAIN FEATURES Symbol Value Unit IT(RMS) 0.8 A IGT ≤200 μA VDRM /VRRM 600 V ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Storage junction temperature range Tstg -40-150 ℃ Operating junction temperature range Tj -40-110 ℃ Repetitive peak off-state voltage VDRM 600 V Repetitive peak reverse voltage VRRM 600 V RMS on-state current TO-92/ SOT-23-3L (TC=60℃) IT(RMS) 0.8 A Non repetitive surge peak on-state current (tp=10ms) ITSM 8 A I2t value for fusing (tp=10ms) I2t 0.32 A2s Critical rate of rise of on-state current dI/dt 50 A/μs Peak gate current (tp=20μs, Tj=110℃) IGM 0.2 A Peak gate power (tp=20μs, Tj=110℃) PGM 0.5 W Average gate power dissipation(Tj=110℃) PG(AV) 0.1 W G(3) TO-92 A(2) K(1) SOT-23-3L

JX007 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 2 / 4- http://www.jjwdz.com ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Value Unit MIN. TYP. MAX. IGT VD=12V RL=33Ω - 30 200 μA VGT - 0.6 0.8 V VGD VD=VDRM Tj=110℃ 0.2 - - V IL IG=1.2 IGT - - 5 mA IH IT=0.05A - - 3 mA dV/dt VD=2/3VDRM Tj=110℃ RGK=1KΩ 10 - - V/μs STATIC CHARACTERISTICS Symbol Parameter Value(MAX) Unit VTM IT=1A tp=380μs Tj=25℃ 1.5 V IDRM VD=VDRM VR=VRRM Tj=25℃ 5 μA IRRM Tj=110℃ 100 μA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case TO-92/ SOT-23-3L 75 ℃/W

ORDERING INFORMATION

JieJie Microelectronics Co.,Ltd Sensitive gate SCRs IT(RMS):0.8A U:TO-92 L:SOT-23-3L

JX007 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 3 / 4- http://www.jjwdz.com PACKAGE MECHANICAL DATA K G B Φ Max 1.5mm H A F C N N E P V D J Dimensions Millimeters InchesRef. A B C D E F G H J K N P V 4.45 4.32 3.18 0.407 5.20 5.33 4.19 0.533 0.175 0.170 0.125 0.016 0.205 0.210 0.165 0.021 0.60 0.80 1.1 0.043 - 1.27 - 0.050- - - 2.30 - 0.091- - 0.36 0.50 0.014 0.020 15.012.70 0.500 0.591 2.04 2.66 0.080 0.105 1.86 2.06 0.073 0.081 4.3 0.169- - 0.024 0.031 - - - - TO-92 Dimensions Millimeters InchesRef. A B C D E F G H 2.65 0.34 2.95 0.36 0.104 0.115 0.075 0.013 0.116 0.014 1.17 0.046 0.15 0.006 0.25 0.55 0.010 0.063 A 2.92 B 1.90 C D 1.60 E F G H 0.022SOT-23-3L FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A)P(w) 0.2 IT(RMS) (A) Tc (℃)0 0 25 50 75 100 125 0.4 0.6 0.8 1.0 1.2 0.2 0.4 0.6 0.8 1.0 1.2 TO-92/ SOT-23-3L α=180°

JX007 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 4 / 4- http://www.jjwdz.com FIG.3: Surge peak on-state current versus number of cycles FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of I t FIG.4: On-state characteristics (maximum values) 1 10 100 1000 Number of cycles0 ITSM (A) ITM (A) VTM (V) 0 1 2 3 4 5 0.1 Tj=25℃ Tj=Tjmax tp(ms) 0.01 0.1 1 10 ITSM (A), I t (A s) -40 0 40 80 120 IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 0.0 0.5 1.5 2.0 3.0 I t ITSM IH&IL 1.0 2.5 Tj(℃) IGT One cycle tp=10ms 0.1 100 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the second version which is made in 18 -Nov.-2014. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright ©2014 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.