LM118JAN_V01 TI | Alldatasheet
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www.ti.com SNOSAM8A –JULY 2005–REVISED MARCH 2013 LM118JANOperationalAmplifier Check forSamples: LM118JAN 1FEATURES DESCRIPTION The LM118 is a precisionhigh speed operational 2• 15 MHz Small SignalBandwidth amplifierdesigned for applicationsrequiringwide• Ensured 50V/μs Slew Rate bandwidthand highslew rate.Itfeaturesa factorof
- Maximum Bias Currentof250 nA ten increaseinspeed over generalpurpose devices withoutsacrificingDC performance.• Operates from Suppliesof±5V to±20V
- InternalFrequency Compensation The LM118 has internalunity gain frequency compensation. This considerably simplifiesits• Inputand Output Overload Protected applicationsince no external components are• Pin Compatible withGeneralPurpose Op necessary for operation.However, unlike mostAmps internallycompensated amplifiers,externalfrequency compensation may be added for optimum performance.For invertingapplications,feedforward compensation willboost the slew rate to over 150V/μs and almost double the bandwidth. Overcompensationcan be used withtheamplifierfor greaterstabilitywhen maximum bandwidth is not needed.Further,a singlecapacitorcan be added to reducethe0.1% settlingtimetounder1 μs. The highspeed and fastsettlingtimeofthisop amp makes itusefulinA/D converters,oscillators,active filters,sample and holdcircuits,or generalpurpose amplifiers.Thisdeviceiseasy toapplyand offersan order of magnitude betterAC performance than industrystandardssuch as theLM709. FastVoltageFollower Do nothard-wireas voltagefollower(R1 ≥ 5 kΩ) Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2005–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.
-IN +IN N/C Comp2 OUT 1 10 2 9 3 8 4 7 V- Bal/Comp35 6 LM118JAN SNOSAM8A –JULY 2005–REVISED MARCH 2013 www.ti.com Connection Diagram Pinconnectionsshown on schematicdiagramand typical applicationsareforTO-5 package. Figure1.CDIP Package Figure2.TO Package Top View Top View See Package Number J0014A See Package Number LMC0008C Figure3.CDIP Package Figure4.CLGA Package Top View Top View See Package Number NAB0008A See Package Number NAD0010A
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www.ti.com SNOSAM8A –JULY 2005–REVISED MARCH 2013 Schematic Diagram These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM118JAN
SNOSAM8A –JULY 2005–REVISED MARCH 2013 www.ti.com AbsoluteMaximum Ratings(1) SupplyVoltage ±20V
8 LD TO 750mW
Power Dissipation(2) 14LD CDIP 1250mW 10LD CLGA 600mW DifferentialInputCurrent(3) ±10 mA InputVoltage(4) ±15V OutputShort-CircuitDuration Continuous OperatingTemperatureRange −55°C ≤ TA ≤ +125°C 8 LD TO (StillAir@ 0.5W) 160°C/W 8 LD TO (500LF/Min Airflow@ 0.5W) 86°C/W 8LD CDIP (StillAir@ 0.5W) 120°C/W 8LD CDIP (500LF/Min Airflow@ 0.5W) 66°C/W θJA 14LD CDIP (StillAir@ 0.5W) 87°C/W 14LD CDIP (500LF/Min Airflow@ 0.5W) 51°C/W ThermalResistance 10LD CLGA (StillAir@ 0.5W) 198°C/W 10LD CLGA (500LF/Min Airflow@ 0.5W) 124°C/W
8 LD TO 48°C/W
8LD CDIP 17°C/W θJC 14LD CDIP 17°C/W 10LD CLGA 22°C/W StorageTemperatureRange −65°C ≤ TA ≤ +150°C Lead Temperature(Soldering,10 seconds) 300°C ESD Tolerance(5) 2000V (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisfunctional,butdo notensurespecificperformancelimits.Forensuredspecificationsand testconditions,see the ElectricalCharacteristics.The ensuredspecificationsapplyonlyforthetestconditionslisted.Some performancecharacteristicsmay degradewhen thedeviceisnotoperatedunderthelistedtestconditions. (2) The maximum power dissipationmust be deratedatelevatedtemperaturesand isdictatedby TJmax (maximum junctiontemperature), θJA (packagejunctiontoambientthermalresistance),and TA (ambienttemperature).The maximum allowablepower dissipationatany temperatureisPDmax = (TJmax -TA)/θJA orthenumber givenintheAbsoluteMaximum Ratings,whicheverislower. (3) The inputsareshuntedwithback-to-backdiodesforovervoltageprotection.Therefore,excessivecurrentwillflowifa differentialinput voltageinexcessof1V isappliedbetween theinputsunlesssome limitingresistanceisused. (4) Forsupplyvoltageslessthan±15V,theabsolutemaximum inputvoltageisequaltothesupplyvoltage. (5) Human body model,1.5kΩ inserieswith100 pF.
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www.ti.com SNOSAM8A –JULY 2005–REVISED MARCH 2013 QualityConformance Inspection Mil-Std-883,Method 5005;Group A Subgroup Description Temp °C
1 Statictestsat 25
2 Statictestsat 125
3 Statictestsat -55
4 Dynamic testsat 25
5 Dynamic testsat 125
6 Dynamic testsat -55
7 Functionaltestsat 25
9 Switchingtestsat 25
10 Switchingtestsat 125
11 Switchingtestsat -55
12 Settlingtimeat 25
13 Settlingtimeat 125
14 Settlingtimeat -55
LM118JAN ElectricalCharacteristicsDC Parameters The followingconditionsapplytoallthefollowingparameters,unlessotherwisespecified. DC: VCC = ±20V Sub-Symbol Parameter Conditions Notes Min Max Unit groups VIO InputOffsetVoltage +VCC = 35V,-VCC = -5V, -4.0 4.0 mV 1 VCM = -15V -6.0 6.0 mV 2,3 +VCC = 5V,-VCC = -35V, -4.0 4.0 mV 1 VCM = 15V -6.0 6.0 mV 2,3 VCM = 0V -4.0 4.0 mV 1 -6.0 6.0 mV 2,3 +VCC = 5V,-VCC = -5V, -4.0 4.0 mV 1 VCM = 0V -6.0 6.0 mV 2,3 IIO InputOffsetCurrent +VCC = 35V,-VCC = -5V, See (1) -40 40 nA 1 VCM = -15V,R S = 100KΩ See (1) -80 80 nA 2,3 +VCC = 5V,-VCC = -35V, See (1) -40 40 nA 1 VCM = 15V,R S = 100KΩ See (1) -80 80 nA 2,3 VCM = 0V,R S = 100KΩ See (1) -40 40 nA 1 See (1) -80 80 nA 2,3 +VCC = 5V,-VCC = -5V, See (1) -40 40 nA 1 VCM = 0V,R S = 100KΩ See (1) -80 80 nA 2,3 ±IIB InputBiasCurrent +VCC = 35V,-VCC = -5V, See (1) 1.0 250 nA 1,2 VCM = -15V,R S = 100KΩ See (1) 1.0 400 nA 3 +VCC = 5V,-VCC = -35V, See (1) 1.0 250 nA 1,2 VCM = 15V,R S = 100KΩ See (1) 1.0 400 nA 3 VCM = 0V,R S = 100KΩ See (1) 1.0 250 nA 1,2 See (1) 1.0 400 nA 3 +VCC = 5V,-VCC = -5V, See (1) 1.0 250 nA 1,2 VCM = 0V,R S = 100KΩ See (1) 1.0 400 nA 3 (1) SlashSheet:R S = 20KΩ,testedwithR S = 100KΩ forbetterresolution. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM118JAN
SNOSAM8A –JULY 2005–REVISED MARCH 2013 www.ti.com LM118JAN ElectricalCharacteristicsDC Parameters (continued) The followingconditionsapplytoallthefollowingparameters,unlessotherwisespecified. DC: VCC = ±20V Sub-Symbol Parameter Conditions Notes Min Max Unit groups +PSRR Power SupplyRejectionRatio +VCC = 10V,-VCC = -20V -100 100 µV/V 1 -150 150 µV/V 2,3 -PSRR Power SupplyRejectionRatio +VCC = 20V,-VCC = -10V -100 100 µV/V 1 -150 150 µV/V 2,3 CMRR Common Mode RejectionRatio VCM = ±15V, 80 dB 1,2,3VCC = ± 35V to±5V +VIO adj. OffsetNull 7.0 mV 1,2,3 -VIO adj. OffsetNull -7.0 mV 1,2,3 DeltaVIO / TemperatureCoefficientofInput 25°C ≤ TA ≤ 125°C See (2) -50 50 µV/°C 2 DeltaT OffsetVoltage -55°C ≤ TA ≤ 25°C See (2) -50 50 µV/°C 3 DeltaIIO / TemperatureCoefficientofInput 25°C ≤ TA ≤ 125°C -See (2) 1000 pA/°C 2DeltaT OffsetCurrent 1000 -55°C ≤ TA ≤ 25°C -See (2) 1000 pA/°C 31000 +IOS ShortCircuitCurrent +VCC = 15V,-VCC = -15V, -65 mA 1,2,3t≤ 25mS, VCM = -15V -IOS ShortCircuitCurrent +VCC = 15V,-VCC = -15V, 65 mA 1,2 t≤ 25mS, VCM = 15V 80 mA 3 ICC Power SupplyCurrent +VCC = 15V,-VCC = -15V 8.0 mA 1 7.0 mA 2 9.0 mA 3 +VOpp OutputVoltageSwing R L = 10KΩ,VCM = -20V 17 V 4,5,6 R L = 2KΩ,VCM = -20V 16 V 4,5,6 -VOpp OutputVoltageSwing R L = 10KΩ,VCM = 20V -17 V 4,5,6 R L = 2KΩ,VCM = 20V -16 V 4,5,6 +AVS Open Loop VoltageGain VO = 15V,R L = 2KΩ See (3) 50 V/mV 4 See (3) 32 V/mV 5,6 VO = 15V,R L = 10KΩ See (3) 50 V/mV 4 See (3) 32 V/mV 5,6 -AVS Open Loop VoltageGain VO = -15V,R L = 2KΩ See (3) 50 V/mV 4 See (3) 32 V/mV 5,6 VO = -15V,R L = 10KΩ See (3) 50 V/mV 4 See (3) 32 V/mV 5,6 AVS Open Loop VoltageGain ±VCC = ±5V,VO = ±2V, See (3) 10 V/mV 4,5,6R L = 2KΩ ±VCC = ±5V,VO = ±2V, See (3) 10 V/mV 4,5,6R L = 10KΩ (2) Calculatedparameter. (3) DataloginK = V/mV
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www.ti.com SNOSAM8A –JULY 2005–REVISED MARCH 2013 LM118JAN ElectricalCharacteristicsAC Parameters The followingconditionsapplytoallthefollowingparameters,unlessotherwisespecified. AC: VCC = ±20V Sub-Symbol Parameter Conditions Notes Min Max Unit groups NIBB NoiseInputBroadband BW = 10Hz to5KHz, 25 µVRMS 7R S = 0Ω NIPC NoiseInputPopcorn BW = 10Hz to5KHz, 80 µVPK 7R S = 20KΩ TR tR TransientResponse:RiseTime VI= 50mV, PRR = 1KHz 40 nS 7,8A,8B TR OS TransientResponse:Overshoot VI= 50mV, PRR = 1KHz 50 % 7,8A,8B +SR Slew Rate AV = 1,VI= -5V to+5V 50 V/µS 7,8B
40 V/µS 8A
-SR Slew Rate AV = 1,VI= +5V to-5V 50 V/µS 7,8B +tS SettlingTime VI= -5V to+5V See (1) 800 nS 12 See (1) 1200 nS 13,14 -tS SettlingTime VI= +5V to-5V See (1) 800 nS 12 See (1) 1200 nS 13,14 (1) Errorband= ±2%. LM118JAN ElectricalCharacteristicsDC DriftParameters The followingconditionsapplytoallthefollowingparameters,unlessotherwisespecified. DC: VCC = ±20V Deltacalculationsperformedon JAN S devicesatgroupB,subgroup5 only. Sub-Symbol Parameter Conditions Notes Min Max Unit groups VIO InputOffsetVoltage VCM = 0V -1.0 1.0 mV 1 ±IIB InputBiasCurrent VCM = 0V,R S = 100KΩ -25 25 nA 1 Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM118JAN
SNOSAM8A –JULY 2005–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics InputCurrent VoltageGain Figure5. Figure6. Power Supply Rejection InputNoise Voltage Figure7. Figure8. Common Mode Rejection Supply Current Figure9. Figure10.
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www.ti.com SNOSAM8A –JULY 2005–REVISED MARCH 2013 TypicalPerformance Characteristics(continued) Closed Loop Output Impedance CurrentLimiting Figure11. Figure12. InputCurrent UnityGain Bandwidth Figure13. Figure14. VoltageFollowerSlew Rate InverterSettlingTime Figure15. Figure16. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM118JAN
SNOSAM8A –JULY 2005–REVISED MARCH 2013 www.ti.com TypicalPerformance Characteristics(continued) Large SignalFrequency Response Open Loop Frequency Response Figure17. Figure18. VoltageFollowerPulse Response Large SignalFrequency Response Figure19. Figure20. Open Loop Frequency Response InverterPulse Response Figure21. Figure22.
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www.ti.com SNOSAM8A –JULY 2005–REVISED MARCH 2013 AUXILIARY CIRCUITS Figure23. Feedforward Compensation Figure25. OffsetBalancing forGreaterInvertingSlew Rate Figure26. IsolatingLarge CapacitiveLoads *Balancecircuitnecessaryforincreased slew. Slew ratetypically150V/μs. Figure24. Compensation forMinimum Settling Time Figure27. Overcompensation Slew and settlingtimeto0.1% fora 10V stepchange is800 ns. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM118JAN
SNOSAM8A –JULY 2005–REVISED MARCH 2013 www.ti.com TypicalApplications Figure28. FastVoltageFollower Figure29. Integratoror Slow Inverter C F = Large (CF ≥ 50 pF) *Do nothard-wireas integratororslowinverter;inserta 10k-5pF networkinserieswiththeinput,toprevent oscillation. (1) Do nothard-wireas voltagefollower(R1 ≥ 5 kΩ) FastSumming Amplifier DifferentialAmplifier
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www.ti.com SNOSAM8A –JULY 2005–REVISED MARCH 2013 Figure30. FastSample and Hold Figure31. D/A ConverterUsing Ladder Network *Optional— Reduces settlingtime. Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LM118JAN
SNOSAM8A –JULY 2005–REVISED MARCH 2013 www.ti.com Figure32. Four Quadrant Multiplier ΔOutputzero. *“Y”zero +“X”zero ‡Fullscaleadjust. Figure33. D/A ConverterUsing BinaryWeighted Network *Optional— Reduces settlingtime.
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www.ti.com SNOSAM8A –JULY 2005–REVISED MARCH 2013 Figure34. FastSumming AmplifierwithLow InputCurrent Wein BridgeSine Wave Oscillator InstrumentationAmplifier Copyright© 2005–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LM118JAN
SNOSAM8A –JULY 2005–REVISED MARCH 2013 www.ti.com REVISION HISTORY SECTION Date Released Revision Section Originator Changes 07/12/05 A New Release,Corporateformat L.Lytle 1 MDS datasheet,MJLM118 –X Rev 0A0 was convertedintotheCorp.datasheet format.MDS datasheetwillbe archived. 03/20/2013 A AllSections Changed layoutofNationalData SheettoTI format
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www.ti.com 30-Sep-2021 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead finish/ Ball material (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples JL118BPA ACTIVE CDIP NAB 8 40 Non-RoHS & Green Call TI Level-1-NA-UNLIM -55 to 125 JL118BPA Q JM38510/ 10107BPA ACO (10107BPA >T, 1010 7BPA MYS) M38510/10107BPA ACTIVE CDIP NAB 8 40 Non-RoHS & Green Call TI Level-1-NA-UNLIM 0 to 0 JL118BPA Q JM38510/ 10107BPA ACO (10107BPA >T, 1010 7BPA MYS) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two lines if the finish value exceeds the maximum column width.
www.ti.com 30-Sep-2021 Addendum-Page 2 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
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