JL111BGA

JM38510-10304BGA TI | Alldatasheet

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www.ti.com SNOSAM9B –JULY 2008–REVISED MARCH 2013 LM111JANVoltageComparator Check forSamples: LM111JAN 1FEATURES DESCRIPTION The LM111 isa voltagecomparatorthathas input 2• Operates from Single5V Supply currentsnearlya thousandtimeslowerthandevices• InputCurrent:200 nA max. Over Temperature such as theLM106 or LM710. Itisalsodesignedto

• OffsetCurrent:20 nA max. Over Temperature operateover a widerrange of supplyvoltages:from standard±15V op amp suppliesdown to the single• DifferentialInputVoltageRange: ±30V 5V supplyused forIC logic.The outputiscompatible• Power Consumption: 135 mW at±15V withRTL, DTL and TTL as wellas MOS circuits.
• Power Supply Voltage,single5V to±15V Further,it can drive lamps or relays,switching voltagesup to50V atcurrentsas highas 50 mA.• OffsetVoltageNullCapability
• StrobeCapability Both theinputsand theoutputsoftheLM111 can be isolatedfrom system ground, and the outputcan driveloadsreferredtoground,thepositivesupplyor the negativesupply.Offsetbalancingand strobe capabilityare providedand outputscan be wire OR'ed. Althoughslowerthan the LM106 and LM710 (200 ns responsetimevs 40 ns) the deviceisalso much lessprone tospuriousoscillations.The LM111 has the same pin configurationas the LM106 and LM710. Connection Diagrams Note:Pin4 connectedtocase Figure1. MetalCan Package Top View See Package Number LMC0008C Figure2.Dual-In-LinePackage Figure3.Dual-In-LinePackage Top View Top View See Package Number NAB0008A See Package Number J0014A Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2008–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SNOSAM9B –JULY 2008–REVISED MARCH 2013 www.ti.com Figure4. See Package Number NAD0010A, NAC0010A Schematic Diagram Note:Pinconnectionsshown on schematicdiagramareforLMC0008C package. These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates.

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www.ti.com SNOSAM9B –JULY 2008–REVISED MARCH 2013 AbsoluteMaximum Ratings(1) PositiveSupplyVoltage +30.0V NegativeSupplyVoltage -30.0V TotalSupplyVoltage 36V OutputtoNegativeSupplyVoltage 50V GND toNegativeSupplyVoltage 30V DifferentialInputVoltage ±30V SinkCurrent 50mA InputVoltage(2) ±15V Power Dissipation(3) 8 LD CERDIP 400mW @ 25°C

8 LD MetalCan 330mW @ 25°C

10 LD CERPACK 330mW @ 25°C

10 LD CeramicSOIC 330mW @ 25°C

14 LD CERDIP 400mW @ 25°C

OutputShortCircuitDuration 10 seconds Maximum StrobeCurrent 10mA OperatingTemperatureRange -55°C ≤ TA ≤ 125°C ThermalResistance θJA 8 LD CERDIP (StillAir@ 0.5W) 120°C/W 8 LD CERDIP (500LF/MinAirflow@ 0.5W) 76°C/W 8 LD MetalCan (StillAir@ 0.5W) 150°C/W 8 LD MetalCan (500LF/MinAirflow@ 0.5W) 92°C/W 10 CeramicSOIC (StillAir@ 0.5W) 231°C/W 10 CeramicSOIC (500LF/MinAirflow@ 0.5W) 153°C/W 10 CERPACK (StillAir@ 0.5W) 231°C/W 10 CERPACK (500LF/MinAirflow@ 0.5W) 153°C/W 14 LD CERDIP (StillAir@ 0.5W) 120°C/W 14 LD CERDIP (500LF/MinAirflow@ 0.5W) 65°C/W θJC 8 LD CERDIP 35°C/W

8 LD MetalCan Pkg 40°C/W

10 LD CeramicSOIC 60°C/W

10 LD CERPACK 60°C/W

14 LD CERDIP 35°C/W

StorageTemperatureRange -65°C ≤ TA ≤ 150°C Maximum JunctionTemperature 175°C Lead Temperature(Soldering,60 seconds) 300°C VoltageatStrobePin V+ -5V Package Weight(Typical) 8 LD MetalCan 965mg

8 LD CERDIP 1100mg

10 LD CERPACK 250mg

10 LD CeramicSOIC 225mg

14 LD CERDIP TBD

ESD Rating(4) 300V (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisfunctional,butdo notensurespecificperformancelimits.Forensuredspecificationsand testconditions,see the ElectricalCharacteristics.The ensuredspecificationsapplyonlyforthetestconditionslisted.Some performancecharacteristicsmay degradewhen thedeviceisnotoperatedunderthelistedtestconditions. (2) Thisratingappliesfor±15V supplies.The positiveinputvoltagelimitis30 V above thenegativesupply.The negativeinputvoltagelimit isequaltothenegativesupplyvoltageor30V belowthepositivesupply,whicheverisless. (3) The maximum power dissipationmust be deratedatelevatedtemperaturesand isdictatedby TJmax (maximum junctiontemperature), θJA (packagejunctiontoambientthermalresistance),and TA (ambienttemperature).The maximum allowablepower dissipationatany temperatureisPDmax = (TJmax -TA)/θJA orthenumber givenintheAbsoluteMaximum Ratings,whicheverislower. (4) Human body model,1.5kΩ inserieswith100 pF. Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM111JAN

SNOSAM9B –JULY 2008–REVISED MARCH 2013 www.ti.com Recommended OperatingConditions SupplyVoltage VCC = ±15VDC OperatingTemperatureRange -55°C ≤ TA ≤ 125°C QualityConformance Inspection Mil-Std-883,Method 5005 — Group A Subgroup Description Temperature (°C)

1 Statictestsat +25

2 Statictestsat +125

3 Statictestsat -55

4 Dynamic testsat +25

5 Dynamic testsat +125

6 Dynamic testsat -55

7 Functionaltestsat +25

9 Switchingtestsat +25

10 Switchingtestsat +125

11 Switchingtestsat -55

LM111 JAN ElectricalCharacteristicsDC Parameters The followingconditionsapply,unlessotherwisespecified. DC: VCC = ±15V,VCM = 0 Sub-Symbol Parameter Conditions Notes Min Max Unit groups VIO InputOffsetVoltage VI= 0V,R S = 50Ω -3.0 +3.0 mV 1 -4.0 +4.0 mV 2,3 VI= 0V,VCM = -14.5V, -4.0 +4.0 mV 2,3R S = 50Ω +VCC = 2V,-VCC = -28V, -3.0 +3.0 mV 1 VI= 0V,VCM = +13V, -4.0 +4.0 mV 2,3R S = 50Ω VI= 0V,R S = 50Ω -4.0 +4.0 mV 2,3 VIO R RaisedInputOffsetVoltage VI= 0V,R S = 50Ω -3.0 +3.0 mV 1 See (1) -4.5 +4.5 mV 2,3 VI= 0V,VCM = -14.5V, See (1) -4.5 +4.5 mV 2,3R S = 50Ω +VCC = 2V,-VCC = -28V, -3.0 +3.0 mV 1 VI= 0V,VCM = +13V, See (1) -4.5 +4.5 mV 2,3R S = 50Ω IIO InputOffsetCurrent VI= 0V,R S = 50KΩ -10 +10 nA 1,2 -20 +20 nA 3 VI= 0V,VCM = -14.5V, -20 +20 nA 3R S = 50KΩ +VCC = 2V,-VCC = -28V, -10 +10 nA 1,2 VI= 0V,VCM = +13V, -20 +20 nA 3R S = 50KΩ (1) Subscript(R)indicatestestswhichareperformedwithinputstagecurrentraisedby connectingBAL and BAL/STB terminalsto+VCC .

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www.ti.com SNOSAM9B –JULY 2008–REVISED MARCH 2013 LM111 JAN ElectricalCharacteristicsDC Parameters (continued) The followingconditionsapply,unlessotherwisespecified. DC: VCC = ±15V,VCM = 0 Sub-Symbol Parameter Conditions Notes Min Max Unit groups IIOR RaisedInputOffsetCurrent VI= 0V,R S = 50KΩ -25 +25 nA 1,2 See (1) -50 +50 nA 3 ±IIB InputBiasCurrent VI= 0V,R S = 50KΩ -100 0.1 nA 1,2 -150 0.1 nA 3 VI= 0V,VCM = -14.5V, -200 0.1 nA 3R S = 50KΩ +VCC = 2V,-VCC = -28V, -150 0.1 nA 1,2 VI= 0V,VCM = +13V, -200 0.1 nA 3R S = 50KΩ VO St CollectorOutputVoltage(Strobe) +VI= Gnd, -VI= 15V, See (2) 14 V 1,2,3ISt = -3mA, R S = 50Ω CMRR Common Mode Rejection -28V ≤ -VCC ≤ -0.5V,R S=50Ω,2V ≤ VCM ≤ 13V,RS = 50Ω VOL Low LevelOutputVoltage +VCC = 4.5V,-VCC = Gnd, IO = 8mA, ±VI= 0.5V, See (3) 0.4 V 1,2,3 VID = -6mV +VCC = 4.5V,-VCC = Gnd, IO = 8mA, ±VI= 3V, See (3) 0.4 V 1,2,3 VID = -6mV IO = 50mA, ±VI= 13V, See (3) 1.5 V 1,2,3VID = -5mV IO = 50mA, ±VI= -14V, See (3) 1.5 V 1,2,3VID = -5mV ICEX OutputLeakage Current +VCC = 18V,-VCC = -18V, -1.0 10 nA 1 VO = 32V -1.0 500 nA 2 IIL InputLeakage Current +VCC = 18V,-VCC = -18V, -5.0 500 nA 1,2,3+VI= +12V, -VI= -17V +VCC = 18V,-VCC = -18V, -5.0 500 nA 1,2,3+VI= -17V,-VI= +12V +ICC Power SupplyCurrent 6.0 mA 1,2 7.0 mA 3 -ICC Power SupplyCurrent -5.0 mA 1,2 -6.0 mA 3 Δ VIO /Δ T TemperatureCoefficientInput 25°C ≤ T ≤ 125°C See (4) -25 25 uV/°C 2 OffsetVoltage -55°C ≤ T ≤ 25°C See (4) -25 25 uV/°C 3 Δ IIO /Δ T TemperatureCoefficientInput 25°C ≤ T ≤ 125°C See (4) -100 100 pA/°C 2 OffsetCurrent -55°C ≤ T ≤ 25°C See (4) -200 200 pA/°C 3 IOS ShortCircuitCurrent VO = 5V,t≤ 10mS, -VI= 0.1V, 200 mA 1 +VI= 0V 150 mA 2 250 mA 3 +VIO adj. InputOffsetVoltage(Adjustment) VO = 0V,VI= 0V,R S = 50Ω 5.0 mV 1 -VIO adj. InputOffsetVoltage(Adjustment) VO = 0V,VI= 0V,R S = 50Ω -5.0 mV 1 ±AVE VoltageGain (Emitter) R L = 600Ω See (5) 10 V/mV 4 See (5) 8.0 V/mV 5,6 (2) IST = −2mA at−55°C (3) VID isvoltagedifferencebetween inputs. (4) Calculatedparameter. (5) DatalogreadinginK=V/mV. Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM111JAN

SNOSAM9B –JULY 2008–REVISED MARCH 2013 www.ti.com LM111 JAN ElectricalCharacteristicsAC Parameters The followingconditionsapply,unlessotherwisespecified. AC: VCC = ±15V,VCM = 0 Sub-Symbol Parameter Conditions Notes Min Max Unit groups tRLHC Response Time (CollectorOutput) VOD (Overdrive)= -5mV, 300 nS 7,8B C L = 50pF,VI= -100mV 640 nS 8A tRHLC Response Time (CollectorOutput) VOD (Overdrive)= 5mV, 300 nS 7,8B C L = 50pF,VI= 100mV 500 nS 8A LM111 JAN ElectricalCharacteristicsDC DriftParameters The followingconditionsapply,unlessotherwisespecified. DC: VCC = ±15V,VCM = 0 Deltacalculationsperformedon JANS devicesatgroupB ,subgroup5. Sub-Symbol Parameter Conditions Notes Min Max Unit groups VIO InputOffsetVoltage VI= 0V,R S = 50Ω -0.5 0.5 mV 1 +VCC = 29.5V,-VCC = -0.5V, VI= 0V,VCM = -14.5V, -0.5 0.5 mV 1 R S = 50Ω +VCC = 2V,-VCC = -28V, VI= 0V,VCM = +13V, -0.5 0.5 mV 1 R S = 50Ω ±IIB InputBiasCurrent VI= 0V,R S = 50KΩ -12.5 12.5 nA 1 +VCC = 29.5V,-VCC = -0.5V, VI= 0V,VCM = -14.5V, -12.5 12.5 nA 1 R S = 50KΩ +VCC = 2V,-VCC = -28V, VI= 0V,VCM = +13V, -12.5 12.5 nA 1 R S = 50KΩ ICEX OutputLeakage Current +VCC = 18V,-VCC = -18V, -5.0 5.0 nA 1VO = 32V

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www.ti.com SNOSAM9B –JULY 2008–REVISED MARCH 2013 LM111 TypicalPerformance Characteristics InputBias Current InputBias Current Figure5. Figure6. InputBias Current InputBias Current Figure7. Figure8. InputBias Current InputBias Current Figure9. Figure10. Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM111JAN

SNOSAM9B –JULY 2008–REVISED MARCH 2013 www.ti.com LM111 TypicalPerformance Characteristics(continued) InputBias Current InputBias Current InputOverdrives InputOverdrives Figure11. Figure12. Response Time forVarious InputBias Current InputOverdrives Figure13. Figure14. Response Time forVarious InputOverdrives Output LimitingCharacteristics Figure15. Figure16.

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www.ti.com SNOSAM9B –JULY 2008–REVISED MARCH 2013 LM111 TypicalPerformance Characteristics(continued) Supply Current Supply Current Figure17. Figure18. Leakage Currents Figure19. Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM111JAN

SNOSAM9B –JULY 2008–REVISED MARCH 2013 www.ti.com APPLICATION HINTS CIRCUIT TECHNIQUES FOR AVOIDING OSCILLATIONS IN COMPARATOR APPLICATIONS When a high-speedcomparatorsuch as theLM111 isused withfastinputsignalsand low sourceimpedances, theoutputresponsewillnormallybe fastand stable,assumingthatthepower supplieshave been bypassed(with 0.1μF disccapacitors),and thattheoutputsignalisroutedwellaway from theinputs(pins2 and 3) and also away frompins5 and 6. However,when theinputsignalisa voltageramp ora slowsinewave, orifthesignalsourceimpedance ishigh (1kΩ to100 kΩ),thecomparatormay burstintooscillationnearthecrossing-point.Thisisdue tothehighgain and wide bandwidthof comparatorssuch as the LM111. To avoidoscillationor instabilityin such a usage, severalprecautionsarerecommended, as shown inFigure20 below. 1. The trimpins(pins5 and 6) actas unwanted auxiliaryinputs.Ifthesepinsare notconnectedtoa trim-pot, theyshouldbe shortedtogether.Iftheyareconnectedtoa trim-pot,a 0.01μF capacitorC1 between pins5 and 6 willminimizethesusceptibilitytoAC coupling.A smallercapacitorisused ifpin5 isused forpositive feedbackas inFigure20. 2. Certainsourceswillproducea cleanercomparatoroutputwaveform ifa 100 pF to1000 pF capacitorC2 is connecteddirectlyacrosstheinputpins. 3. When thesignalsourceisappliedthrougha resistivenetwork,R S,itisusuallyadvantageoustochoose an R S′ ofsubstantiallythesame value,bothforDC and fordynamic (AC) considerations.Carbon,tin-oxide,and metal-filmresistorshave allbeen used successfullyin comparatorinputcircuitry.Inductivewire wound resistorsarenotsuitable. 4. When comparatorcircuitsuse inputresistors(e.g.summing resistors),theirvalue and placement are particularlyimportant.Inallcases thebody oftheresistorshouldbe closetothedeviceor socket.Inother words thereshouldbe verylittleleadlengthor printed-circuitfoilrun between comparatorand resistorto radiateorpickup signals.The same appliestocapacitors,pots,etc.For example,ifR S=10 kΩ,as littleas 5 inchesofleadbetween theresistorsand theinputpinscan resultinoscillationsthatareveryhardtodamp. Twistingthese inputleads tightlyis the only (second best)alternativeto placingresistorscloseto the comparator. 5. Sincefeedbacktoalmostany pinofa comparatorcan resultinoscillation,theprinted-circuitlayoutshouldbe engineeredthoughtfully.Preferablythereshouldbe a ground planeunder theLM111 circuitry,forexample, one sideofa double-layercircuitcard.Ground foil(or,positivesupplyornegativesupplyfoil)shouldextend between theoutputand theinputs,toactas a guard.The foilconnectionsfortheinputsshouldbe as small and compact as possible,and shouldbe essentiallysurroundedby groundfoilon allsides,toguardagainst capacitivecouplingfromany high-levelsignals(suchas theoutput).Ifpins5 and 6 arenotused,theyshould be shortedtogether.Iftheyareconnectedtoa trim-pot,thetrim-potshouldbe located,atmost,a few inches away from the LM111, and the 0.01 μF capacitorshouldbe installed.Ifthiscapacitorcannotbe used,a shieldingprinted-circuitfoilmay be advisablebetween pins6 and 7. The power supplybypass capacitors shouldbe locatedwithina coupleinchesoftheLM111. (Some othercomparatorsrequirethepower-supply bypasstobe locatedimmediatelyadjacenttothecomparator.) 6. Itisa standardproceduretouse hysteresis(positivefeedback)arounda comparator,topreventoscillation, and toavoidexcessivenoiseon theoutputbecause thecomparatorisa good amplifierforitsown noise.In the circuitof Figure21, the feedback from the outputto the positiveinputwillcause about 3 mV of hysteresis.However,ifR S islargerthan100Ω,such as 50 kΩ,itwould notbe reasonabletosimplyincrease thevalueofthepositivefeedbackresistorabove 510 kΩ.The circuitofFigure22 couldbe used,butitis ratherawkward.See thenotesinparagraph7 below. 7. When bothinputsoftheLM111 areconnectedtoactivesignals,orifa high-impedancesignalisdrivingthe positiveinputoftheLM111 so thatpositivefeedbackwould be disruptive,thecircuitofFigure20 isideal. The positivefeedbackisto pin5 (one of the offsetadjustmentpins).Itissufficientto cause 1 to 2 mV hysteresisand sharptransitionswithinputtrianglewaves from a few Hz tohundredsofkHz. The positive- feedbacksignalacrossthe82Ω resistorswings240 mV below thepositivesupply.Thissignaliscentered aroundthenominalvoltageatpin5,so thisfeedbackdoes notadd totheVOS ofthecomparator.As much as 8 mV ofVOS can be trimmedout,usingthe5 kΩ potand 3 kΩ resistoras shown. 8. These applicationnotes apply specificallyto the LM111 and LF111 familiesof comparators,and are applicabletoallhigh-speedcomparatorsingeneral,(withtheexceptionthatnotallcomparatorshave trim pins).

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www.ti.com SNOSAM9B –JULY 2008–REVISED MARCH 2013 Pinconnectionsshown areforLM111H intheLMC0008C hermeticpackage Figure20. Improved PositiveFeedback Pinconnectionsshown areforLM111H intheLMC0008C hermeticpackage Figure21. ConventionalPositiveFeedback Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM111JAN

SNOSAM9B –JULY 2008–REVISED MARCH 2013 www.ti.com Figure22. PositiveFeedback withHigh Source Resistance

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www.ti.com SNOSAM9B –JULY 2008–REVISED MARCH 2013 TypicalApplications Pinconnectionsshown on schematicdiagramand typicalapplicationsareforLMC0008C metalcan package. OffsetBalancing Strobing Note:Do Not Ground StrobePin.Outputisturnedoffwhen current ispulledfromStrobePin. Figure23. Figure24. IncreasingInputStage Current DetectorforMagnetic Transducer Note:Increasestypicalcommon mode slewfrom7.0V/μs to18V/μs. Figure25. Figure26. DigitalTransmissionIsolator Relay DriverwithStrobe *Absorbsinductivekickbackofrelayand protectsIC fromsevere voltagetransientson V++ line. Note:Do Not Ground StrobePin. Figure27. Figure28. Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LM111JAN

SNOSAM9B –JULY 2008–REVISED MARCH 2013 www.ti.com StrobingoffBoth Inputand Output Stages Note:Typicalinputcurrentis50 pA withinputsstrobedoff. Figure29. PositivePeak Detector Zero Crossing DetectorDrivingMOS Logic *Solidtantalum Figure30. Figure31. TypicalApplications (Pinnumbers refertoLMC0008C package) Zero Crossing DetectorDrivingMOS Switch 100 kHz Free Running Multivibrator *TTL orDTL fanoutoftwo Figure32. Figure33.

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www.ti.com SNOSAM9B –JULY 2008–REVISED MARCH 2013

10 Hz to10 kHz VoltageControlledOscillator

*Adjustforsymmetricalsquare wave timewhen VIN = 5 mV †Minimum capacitance20 pF Maximum frequency50 kHz Figure34. DrivingGround-ReferredLoad Using Clamp Diodes toImprove Response *Inputpolarityisreversedwhen usingpin1 as output. Figure35. Figure36. TTL InterfacewithHigh LevelLogic *Valuesshown arefora 0 to30V logicswing and a 15V threshold. †May be added tocontrolspeed and reduce susceptibilitytonoisespikes. Figure37. Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LM111JAN

SNOSAM9B –JULY 2008–REVISED MARCH 2013 www.ti.com CrystalOscillator Comparator and SolenoidDriver Figure38. Figure39. PrecisionSquarer Low VoltageAdjustableReferenceSupply *Solidtantalum †Adjusttosetclamp level *Solidtantalum Figure40. Figure41. PositivePeak Detector Zero Crossing DetectorDrivingMOS Logic *Solidtantalum Figure42. Figure43.

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www.ti.com SNOSAM9B –JULY 2008–REVISED MARCH 2013 NegativePeak Detector PrecisionPhotodiode Comparator *Solidtantalum *R2 setsthecomparisonlevel.Atcomparison,thephotodiodehas lessthan5 mV acrossit,decreasingleakagesby an orderof magnitude. Figure44. Figure45. SwitchingPower Amplifier SwitchingPower Amplifier Figure46. Figure47. Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:LM111JAN

SNOSAM9B –JULY 2008–REVISED MARCH 2013 www.ti.com REVISION HISTORY SECTION Released Revision Section Originator Changes 05/09/05 A New Release,Corporate L.Lytle 1 MDS datasheetsconvertedintoone Corp. format datasheetformat.MJLM111 –X Rev 0D3 will be archived. 03/26/2013 B AllSections Changed layoutofNationalData SheettoTI format

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www.ti.com 11-Apr-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Top-Side Markings (4) Samples JL111BGA ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 JL111BGA JM38510/10304BGA Q ACO JM38510/10304BGA Q JM38510/10304BGA ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 JL111BGA JM38510/10304BGA Q ACO JM38510/10304BGA Q M38510/10304BGA ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 JL111BGA JM38510/10304BGA Q ACO JM38510/10304BGA Q (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.

www.ti.com 11-Apr-2013 Addendum-Page 2 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF LM111JAN, LM111JAN-SP :

• Military: LM111JAN
• Space: LM111JAN-SP NOTE: Qualified Version Definitions:
• Military - QML certified for Military and Defense Applications
• Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application

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