J680

2SJ680 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type ( π-MOS V) 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications

• Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.0 S (typ.)
• Low leakage current: IDSS = −100 µA (max) (VDS = −200 V)
• Enhancement model: Vth = −1.5 ~ −3.5 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V DSS −200 V Drain-gate voltage (RGS = 20 kΩ) V DGR −200 V Gate-source voltage V GSS ±20 V DC (Note 1) I D −2.5 Drain current Pulse (Note 1) I DP −10 A Drain power dissipation (Tc = 25°C) P D 20 W Single pulse avalanche energy (Note 2) EAS 97.5 mJ Avalanche current I AR −2.5 A Repetitive avalanche energy (Note 3) E AR 2.0 mJ Channel temperature T ch 150 °C Storage temperature range T stg −55~150 °C Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R th (ch-c) 6.25 °C/W Thermal resistance, channel to ambient R th (ch-a) 125 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V DD = −50 V, Tch = 25°C (initial), L = −25.2 mH, IAR = −2.5 A RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7J2B Weight: 0.36 g (typ.) ２．３±０．２ １２３ １．1 MAX． ０．６±０．１５ ０．６ MAX ０．６ MAX． １．１±０．２ ６．５±０．２ ２．３２．３ ５．７ ５．２±０．２ ０．９ ４．１±０．２ １．６

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ± 10 µA Drain cutoff current I DSS V DS = −200 V, VGS = 0 V ⎯ ⎯ −100 µA Drain-source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 V −200 ⎯ ⎯ V Gate threshold voltage V th V DS = −10 V, ID = −1 mA −1.5 ⎯ −3.5 V Drain-source ON-resistance R DS (ON) V GS = −10 V, ID = −1.5 A ⎯ 1.6 2.0 Ω Forward transfer admittance ⎪Yfs⎪ V DS = −10 V, ID = −1.5 A 1.0 2.0 ⎯ S Input capacitance C iss ⎯ 410 ⎯ Reverse transfer capacitance C rss ⎯ 40 ⎯ Output capacitance C oss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 145 ⎯ pF Rise time t r ⎯ 20 ⎯ Turn-on time t on ⎯ 45 ⎯ Fall time t f ⎯ 15 ⎯ Switching time Turn-off time t off ⎯ 85 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 10 ⎯ Gate-source charge Q gs ⎯ 6 ⎯ Gate-drain (“Miller”) charge Q gd VDD ∼− −160 V, VGS = −10 V, ID = −2.5 A ⎯ 4 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ −2.5 A Pulse drain reverse current (Note 1) I DRP ⎯ ⎯ ⎯ −10 A Forward voltage (diode) V DSF I DR = −2.5 A, VGS = 0 V ⎯ ⎯ 2.0 V Reverse recovery time t rr ⎯ 135 ⎯ ns Reverse recovery charge Q rr IDR = −2.5 A, VGS = 0 V, dIDR/dt = 100 A/µs ⎯ 0.81 ⎯ µC Marking Duty <= 1%, tw = 10 µs −10 V 0 V VGS RL = 66.7 Ω VDD ∼− −100 V ID = −1.5 A VOUT 50 Ω J680 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

Forward transfer admittance ⎪Yfs⎪ (S) Drain-source voltage V DS (V) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Drain-source voltage V DS (V) ID – VDS Drain current I D (A) Gate-source voltage V GS (V) ID – VGS Drain current I D (A) Gate-source voltage V GS (V) VDS – VGS Drain current I D (A) ⎪Yfs⎪ – ID Drain current I D ( A ) RDS (ON) – ID Drain-source ON-resistance RDS (ON) (Ω) −0.4 −0.8 −1.2 −1.6 −2.0 Common source Tc = 25°C pulse test VGS = −4 V −4.2 −4.4 −4.6 −4.8−5 −6 −8 −10 −15 −5 Common source Tc = 25°C, pulse test VGS = −4 V −4.2 −4.4 −4.6 −4.8 −5.25 −5.5 −5.75 −6−10 −15 −10 Common source VDS = −10 V pulse test Tc = −55°C 100 −10 Common source Tc = 25°C pulse test ID = −2.5 A −1.5 −0.8 0.1 −0.1 −1 −10 Tc = −55°C Common source VDS = −10 V pulse test 100 0.1 −0.1 −1 −10 VGS = −10 V Common source Tc = 25°C pulse test −15

Drain power dissipation P D (W) Gate threshold voltage V th ( V ) Case temperature Tc (°C) RDS (ON) – T c Drain-source ON-resistance RDS (ON) (Ω) Drain-source voltage V DS (V) IDR – VDS Drain reverse current I DR ( A ) Drain-source voltage V DS (V) Capacitance – VDS Capacitance C (pF) Case temperature Tc (°C) Vth – Tc Case temperature Tc (°C) PD – Tc Gate-source voltage VGS (V) Total gate charge Q g ( n C ) Dynamic input/output characteristics Drain-source voltage V DS (V) −80 −40 0 40 80 120 160 Common source VGS = −10 V pulse test ID = −1.5 A −1.2 −1.0 −0.1 −10 0.2 0.4 0.6 0.8 1 Common source Tc = 25°C pulse test VGS = 0 V −1 −3−5 −0.1 −1 −10 −100 100 1000 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Tc = 25°C −80 −40 0 40 80 120 160 Common source VDS = 10 V ID = 1 mA pulse test 0 40 80 120 160 0 4 8 12 16 20 −12 −16 −40 −80 −120 −160 Common source ID = −2.5 A Tc = 25°C pulse test VDS = −40 V −80 −180 VGS VDS

Pulse width t w (S) rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) Drain-source voltage V DS (V) Safe operating area Drain current I D (A) 0.001 10 µ 100 µ 1 m 10 m 100 m 1 10 100 0.003 0.005 0.01 0.03 0.05 0.1 0.3 0.5 T PDM t Duty = t/T Rth (ch-c) = 6.25°C/W Duty = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse ID max (pulse) * DC operation 100 µs* 1 ms* VDSS max −0.005 −0.01 −0.03 −0.05 −0.1 −0.3 −0.5 −10 −30 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. Avalanche energy E AS (mJ) Channel temperature T ch ( ° C ) EAS – Tch 100 50 75 100 125 150 −15 V 15 V Test circuit Waveform IAR BVDSS VDD V DS RG = 25 Ω VDD = −50 V, L = 25.2 mH ⎟⎟ −⋅⋅⋅= VDDBVDSS BVDSS2IL2 1ΕAS