J665

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Document overview

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Technical content

Features

• ON-resistance R DS(on)1=59mΩ(typ.) • Input capacitance Ciss=4200pF (typ.)
• 4V drive Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -100 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -27 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -108 A Allowable Power Dissipation P D Tc=25°C 65 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 48 mJ Avalanche Current *2 I AV - -27 A Note : *1 VDD=- -30V , L=100μH, IAV=- -27A (Fig.1) *2 L≤100μH, single pulse Package Dimensions unit : mm (typ) 7535-001 2SJ665-DL-1E 2, 4 J665 LOT No. DL

No.8590-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -100 V Zero-Gate Voltage Drain Current I DSS V DS=- -100V, VGS=0V - -1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -10V, ID=- -1mA - -1.2 - -2.6 V Forward Transfer Admittance | yfs | VDS=- -10V, ID=- -14A 15 25 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -14A, VGS=- -10V 59 77 m Ω RDS(on)2 I D=- -14A, VGS=- -4V 75 105 m Ω Input Capacitance Ciss VDS=- -20V, f=1MHz 4200 pF Output Capacitance Coss 280 pF Reverse Transfer Capacitance Crss 220 pF Turn-ON Delay Time td(on) See Fig.2 30 ns Rise Time tr 150 ns Turn-OFF Delay Time td(off) 330 ns Fall Time tf 135 ns Total Gate Charge Qg VDS=- -50V, VGS=- -10V, ID=- -27A 74 nC Gate-to-Source Charge Qgs 12.8 nC Gate-to-Drain “Miller” Charge Qgd 14.7 nC Diode Forward Voltage VSD IS=- -27A, VGS=0V - -0.98 - -1.2 V Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 2SJ665-DL-1E TO-263-2L 800pcs./reel Pb Free ≥50Ω 50Ω RG --10V VDD L 2SJ665 D.C.≤1% PW=10μs P. G 50Ω G S D ID= --14A RL=3.57Ω VDD= --50V VOUT 2SJ665 VIN --10V VIN

No.8590-3/7 RDS(on) -- VGS RDS(on) -- Tc ID -- VDS ID -- VGS Ciss, Coss, Crss -- VDS IS -- VSD SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Source Current, IS -- A IT08792 IT08793 IT08790 IT08791 --10 --20 --30 --60 --50 --40 --10 --20 --30 --60 --50 --40 --50 --25 150 1000 100 10000 IT08797 IT08795IT08794 140 100 120 140 100 120 0 25 50 75 100 125 --10V --6V Tc=25°C --25 Tc= --25 °C 75 Tc=75 ID= --14A Tc=75°C 25°C --25°C ID= --14A, V GS = --4V ID= --14A, V GS= --10V f=1MHz Coss Ciss Crss IT08796 --0.1 --1.0 23 5 723 5 7 23 5 7 --10 100 1000 td(off) tf td(on) tr VDD= --50V VGS= --10V VGS= --3V --4V VDS= --10V --0.1 --1.023 5 7 100 1.0 --0.01 --0.1 --1.0 --10 --100 --1023 5 7 7 352 Tc= --25 75°C 25°C VDS= --10V Tc=75 --25 VGS=0V Diode Forward V oltage, VSD -- V | yfs | -- ID Forward Transfer Admittance, | yfs | -- S

No.8590-4/7 --0.1 --1.0 --10 IDP= --108A(PW≤10μs) ID= --27A 100 μs 10μs 1ms 10ms 100ms DC operation Operation in this area is limited by RDS(on). 35 7 2 --100 --100 IT16904 A S OVGS -- Qg PD -- Tc Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W IT08798 02 0 10 30 40 80 7050 60 --2 --4 --6 --8 --9 --1 --3 --5 --7 --10 VDS= --50V ID= --27A IT08758 20 40 60 80 100 120 140 160 Tc=25°C Single pulse

No.8590-5/7 Taping Specifi cation 2SJ665-DL-1E

No.8590-6/7 Outline Drawing Land Pattern Example 2SJ665-DL-1E Mass (g) Unit 1.5 * For reference mm Unit: mm

PS No.8590-7/7 Note on usage : Since the 2SJ665 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.