J649

2SJ649 NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SJ649 SWITCHING P-CHANNEL POWER MOS FET DATA SHEET Document No. D16332EJ1V0DS00 (1st edition) Date Published May 2003 NS CP(K) Printed in Japan 2002

DESCRIPTION

The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

FEATURES

• Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A)
• Low input capacitance: Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V)
• Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS –60 V Gate to Source Voltage (VDS = 0 V) V GSS m 20 V Drain Current (DC) (TC = 25°C) I D(DC) m 20 A Drain Current (pulse) Note1 ID(pulse) m 70 A Total Power Dissipation (TC = 25°C) P T 25 W Total Power Dissipation (TA = 25°C) P T 2.0 W Channel Temperature T ch 150 °C Storage Temperature T stg –55 to +150 °C Single Avalanche Current Note2 IAS –20 A Single Avalanche Energy Note2 EAS 40 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω , VGS = –20 ¡ 0 V

ORDERING INFORMATION

(Isolated TO-220)

ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Symbol Test Condtions MIN. TYP. MAX. Unit Zero Gate Voltage Drain Current I DSS VDS = –60 V, VGS = 0 V –10 µA Gate Leakage Current I GSS VGS = m 20 V, VDS = 0 V m 10 µA Gate Cut-off Voltage V GS(off) VDS = –10 V, ID = –1 mA –1.5 –2.0 –2.5 V Forward Transfer Admittance Note | yfs |V DS = –10 V, ID = –10 A 10 20 S RDS(on)1 VGS = –10 V, ID = –10 A 38 48 m ΩDrain to Source On-state Resistance Note RDS(on)2 VGS = –4.0 V, ID = –10 A 47 75 m Ω Input Capacitance C iss VDS = –10 V 1900 pF Output Capacitance C oss VGS = 0 V 350 pF Reverse Transfer Capacitance C rss f = 1 MHz 140 pF Turn-on Delay Time t d(on) VDD = –30 V, ID = –10 A 10 ns Rise Time t r VGS = –10 V 10 ns Turn-off Delay Time t d(off) RG = 0 Ω 73 ns Fall Time t f 17 ns Total Gate Charge Q G VDD = –48 V 38 nC Gate to Source Charge Q GS VGS = –10 V 7 nC Gate to Drain Charge Q GD ID = –20 A 10 nC Body Diode Forward Voltage Note VF(S-D) IF = 20 A, VGS = 0 V 0.95 V Reverse Recovery Time t rr IF = 20 A, VGS = 0 V 49 ns Reverse Recovery Charge Q rr di/dt = 100 A/µs 100 nC Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY R G = 25 Ω 50 Ω PG L VDD VGS = –20 → 0 V BV DSSIAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. R G VGS (−) D.U.T. R L VDD τ = 1 sµ Duty Cycle ≤ 1% VGS Wave Form VDS Wave Form VGS (−) 10% 90% 10%0 VDS (−) 90%90% td(on) tr td(off) t f 10% τ VDS ton toff PG. 50 Ω D.U.T. R L VDD IG = −2 mA VGS

Data Sheet D16332EJ1V0DS 3 2SJ649 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 100 120 0 25 50 75 100 125 150 175 TC - Case Temperature - °C PT - Total Power Dissipation - W 0 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A - 0.1 - 1 - 10 - 100 - 0.1 - 1 - 10 - 100 RDS(on) Limited (at VGS = −10 V) 10 ms DC 1 ms PW = 100 µs ID(pulse) ID(DC) Single pulse TC = 25°C VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 0.01 0.1 100 Rth(ch-C) = 5.0°C/W Rth(ch-A) = 62.5°C/W Single pulse PW - Pulse Width - s 10 µ 100 µ 1 m 10 m 100 m 1 10 100 1000

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 0 –2 –3 –4 –80 –60 –40 –20 0 –1 Pulsed VGS = –10 V –4.0 V –4.5 V VDS - Drain to Source Voltage - V ID - Drain Current - A Pulsed VDS = –10 V –10 –0.1 –100 –0.01 TA = −55˚C 25˚C 75˚C 125˚C VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) - Gate Cut-off Voltage - V VDS = –10 V ID = –1 mA –1.0 –2.0 –3.0 –50 0 50 100 150 –4.0 Tch - Channel Temperature - °C | yfs | - Forward Transfer Admittance - S –0.01 –0.1 –1 100 –10 –100 0.1 Pulsed VDS = –10 V TA = 125˚C 75˚C 25˚C −55˚C 0.01 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ –1–0.1 120 100 0 –10 –100 Pulsed VGS = –4.0 V –4.5 V –10 V ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 0 - 2 - 4 - 6 - 8 - 10 - 12 - 14 - 16 - 18 - 20 Pulsed ID = −10 A VGS - Gate to Source Voltage - V

Data Sheet D16332EJ1V0DS 5 2SJ649 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ -75 -50 -25 0 25 50 75 100 125 150 175 Pulsed VGS = −4.0 V −10 V Tch - Channel Temperature - °C Ciss, Coss, Crss - Capacitance - pF 100 1000 10000 –0.1 –1 –10 VGS = 0 V f = 1 MHz C oss C rss C iss –100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns –1–0.1 100 1000 –10 –100 tf tr td(on) td(off) VDD = –30 V VGS = –10 V R G = 0 Ω ID - Drain Current - A VDS - Drain to Source Voltage – V - 5 - 10 - 15 - 20 - 25 - 30 - 35 - 40 - 45 - 50 0 5 10 15 20 25 30 35 40 - 2 - 4 - 6 - 8 - 10 ID = −20 A Pulsed VDS VGS VDD = −48 V −30 V −12 V QG - Gate Charge - nC VGS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT IF - Diode Forward Current - A –1.00 –1.5–0.5 Pulsed –0.01 –0.1 –10 –100 0 V VGS = –10 V –4.0 V VF(S-D) - Source to Drain Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/ s VGS = 0 V 0.1 1 10 100 1000 100 µ IF - Diode Forward Current - A

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR IAS - Single Avalanche Current - A - 1 - 10 - 100 VDD = −30 V RG = 25 Ω VGS = -20 → 0 V Starting Tch = 25°C EAS2 = 100 mJ EAS1 = 40 mJ IAS1 = −20 A IAS2 = −10 A L - Inductive Load - H Energy Derating Factor - % 100 25 50 75 100 125 150 VDD = −30 V RG = 25 Ω VGS = −20 → 0 V IAS ≤ −20 A Starting Tch - Starting Channel Temperature - °C 10 µ 100 µ 1 m 10 m

Data Sheet D16332EJ1V0DS 7 2SJ649 PACKAGE DRAWING (Unit: mm) Isolated TO-220 (MP-45F) 10.0 ± 0.3 3.2 ± 0.2φ 4.5 ± 0.2 2.7 ± 0.2 2.5 ± 0.1 2.54 1.3 ± 0.2 2.54 0.7 ± 0.1 4 ± 0.2 15.0 ± 0.3 12.0 ± 0.2 3 ± 0.1 123 1.Gate 2.Drain 3.Source 13.5MIN. EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

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