J516 | DigiCamel IC Datasheet

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2SJ516 TOSHIBA | Alldatasheet

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TOSHIBA 25)516 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (x-MOSV) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm

APPLICATIONS

[4] Ei © Low Drain-Source ON Resistance: RD (ON) = 0.62 (Typ.) 3 = ci g e@ High Forward Transfer Admittance : |Yf.| = 5.3S (Typ.) Fi | | | “ © Low Leakage Current : Ingg = —100 vA (Vpg = —250 V) 77 | | e@ Enhancement-Mode : Vth = —1.5~-3.5V | é | (Vps = -10V, Ip = —1mA) ors 50.154 ~ | MAXIMUM RATINGS (Ta = 25°C) 2:5420.25, 2:54£0.25 CHARACTERISTIC SYMBOL UNIT Lee FS a 9 Drain-Source Voltage Vpss S 3 Drain-Gate Voltage gg = 20k | Vpor | cart A) Gate-Source Voltage Vass 2 DRAIN J JEDEC = Drain Power Dissipation ae = 25°) EIAJ SC-67 [Single Pulse Avalanche Energy** | Eas [167 | mJ Wrocupa a1oriB Avalanche Current TOSHI A _prs0rie Chanel Temperature Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Chanel To Case Thermal Resistance, Chanel to Ambient. Rth (ch-a) Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp = —50V, Starting Toh = 25°C, L = 6.3 mH, Rg = 250, IAR = -6.5A This transistor is an electrostatic sensitive device. Please handle with caution. @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual Property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-07-23 1/5

TOSHIBA 25)516 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC _| SYMBOL TEST CONDITION san. | rye. [Max.|unrr] Gate Leakage Current Igss__| Vas = £16 V, Vpg = 0V | — | — [| +10] pA | Drain Cut-off Current Ipss Vps = —250V, Veg =0V [| — | — |[-100] yA | Drain-Source Breakdown _ _ Eset Kegnnao=—man nooner [ol — | — |v Gate Threshold Voltage Vps = -10V, Ip = -1mA [| -15/ — | -35] Vv | Drain-Source ON Resistance _| Rpg (ON) | VGS = —10V, Ip = -3A | — | o6| 08] © | Forward Transfer Admittance I¥s|__[VDs = -10V. Ip = ~8A | 25] 53] — | s | Input Capacitance [| — | 1120[ — | Reverse Transfer Vpg = -10V, Vag = 0V, Capacitance Crss |= 1 MHz 110 pF Output Capacitance [= 20 | “my Ip=-3A Rise Time 17 frseine | | ves °Y U Vout [=| | -| -10V Turn-on Time| ton RL = 34 Switching S 33.3.0 Time . Vpp = -100V . VIN : tr, tf < 5ns, Turn-off Time} to¢¢ Duty < 1%, tw = 10 ps 71 Total Gate Charge (Gate- Q Source Plus Gate-Drain) 8 Vpp = —200V, Vgg = -10V c Gate-Source Charge [ Qs |Ip = -6.5A [| — | 19] — | m SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC | SYMBOL TEST CONDITION ]san. | rye. [Max.|unrr] Current Diode Forward Voltage VpsF__|Ipr = —6.5A, Vag =0V | — | — [| 20] v | Ipr= 654, Vgs=0V [= 100 | — [as | Reverse Recovery Charge dipR/dt = 100 A/ ys L— [21] — [uc | MARKING rz >» Lot Number J516 TYPE . |e Month (Starting from Alphabet A) NU Year (Last Number of the Christian Era) 1999-07-23 2/5

5 Ip - Vps 0 Ip - Vps

2 -4 = 95% et a a 2 -8 a 2 fees = |peee Pee

2 LLIfAnr || | 1] ae ee

Rps(ON) — Te IpR - Vps fame FO. eee SS

8 Ves = -10V Te = 25°C —————eeee

5 Pop tars Et

eof | | lle 2 ee peo a seeeeeeee eee sr accecGeaaiaan i CASE TEMPERATURE Te (°C) DRAIN-SOURCE VOLTAGE Vpg (V) CAPACITANCE — Vpg Vth - Te 3000 5 Coo o_o = “T) 7111) counon source hee oe eee |

2 SSS SS - Ip=-1ma

8 AHN Nef aT) PFET

Sg} SE g

3 Sleamonsome: EHH e EEPPP rrr yyy

Sei aii: sees eee eeee Te = 25°C i) On -0.3 -1 -3 -10 -30 Ds oD 40 0 40 80 120 160 DRAIN-SOURCE VOLTAGE Vpg (V) CASE TEMPERATURE Te (°C) Pp — Te DYNAMIC INPUT/OUTPUT 50 500 CHARACTERISTICS, 90 s E]T TT TT Ty = fooumon source] | | | | | | - LL | tt tt apr | | | vest | Sg PN A cs CI ' : BNE Ef fe pAfeoo= me] ee Ne A ES ~ > a & 2 2. —— aa ENS PRUE et eta | a i ry CASE TEMPERATURE Te (°C) GATE CHARGE Qg (nC) 1999-07-23 4/5

TOSHIBA 25)516 Tth — tw hho oo oon oo ooo z MI EITM PUTT TAA fT T_T a ener eee eee ee a uty = 0.5 Fr ES os} mmr | 5s 03 Fos Cn eo 0 Ze” ST ee ae BZ 0.0 foo See Ht

38 Fog Af ffssate moise FE Tl Pom l |

o.oosh Eee 10u 100u im 10m 100m 1 10 PULSE WIDTH ty (s) SAFE OPERATING AREA EAS — Tch ~ Fo ee A an oA pt i —10b lp MAX. pp = ~~ 160)

2 ERdiivous == ESSE Pee Ne

2 {EERE tee NT INP ey -3} KA TINA § TINELLLELEL g NEEATTIPN TTT 5 perme NUP) ENE Be A SNS eH se LTT NET ETT 2 os] sINcue PSH SH s+} +N al eee GN EEE SEE —oaL_temperature. Voss MAX. -1 -3 -10 -30 -100 -300 CHANNEL TEMPERATURE Teh (°C) DRAIN-SOURCE VOLTAGE Vpg (V) ByDss. 15V IAR U Vay -15V | YW i Yop /“ \\| vps / \\ TEST CIRCUIT WAVE FORM a - a2. Bypss vb eR ee esaH Bas = bP (ypss-Vpp) TT 999-0723 55

Product Information

J516 specifications and overview.

Summary

P CHANNEP MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Description

P CHANNEP MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Source title J516 Datasheet(PDF) - Toshiba Semiconductor

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