FJP5027 FAIRCHILD | Alldatasheet
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©2003 Fairchild Semiconductor Corporation Rev. A, December 2003 FJP5027 NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Electrical Characteristics TC=25°C unless otherwise noted hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 10 A IB Base Current 1.5 A PC Collector Dissipation ( TC=25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage I C = 1mA, IE = 0 1100 V BVCEO Collector-Emitter Breakdown Voltage I C = 5mA, IB = 0 800 V BVEBO Emitter-Base Breakdown Voltage I E = 1mA, IC = 0 7 V VCEX(sus) Collector-Emitter Sustaining Voltage I C = 1.5A, IB1 = -IB2 = 0.3A L = 2mH, Clamped 800 V ICBO Collector Cut-off Current V CB = 800V, IE = 0 10 µA IEBO Emitter Cut-off Current V EB = 5V, IC = 0 10 µA hFE1 hFE2 DC Current Gain V CE = 5V, IC = 0.2A VCE = 5V, IC = 1A VCE(sat) Collector-Emitter Saturation Voltage I C = 1.5A, IB = 0.3A 2 V VBE(sat) Base-Emitter Saturation Voltage I C = 1.5A, IB = 0.3A 1.5 V Cob Output Capacitance V CB = 10V, IE = 0, f = 1MHz 60 pF fT Current Gain Bandwidth Product V CE = 10V, IC = 0.2A 15 MHz tON Turn On Time V CC = 400V IC = 5IB1 = -2.5IB2 = 2A RL = 200Ω 0.5 µs tSTG Storage Time 3 µs tF Fall Time 0.3 µs Classification N R O hFE1 10 ~ 20 15 ~ 30 20 ~ 40 FJP5027 High Voltage and High Reliability
- High Speed Switching
- W i d e S O A 1.Base 2.Collector 3.Emitter
1 TO-220
Figure 7. Resistive Load Switching Characteristics Figure 8. Power Derating
Rev. A, December 2003©2003 Fairchild Semiconductor Corporation 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 1.30 ±0.10 1.30+0.10 –0.05 0.50+0.10 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] TO-220
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