J387S VBSEMI | Alldatasheet

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Technical content

P-Channel 20-V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition T r e n c h F E T® Power MOSFET  100 % Rg Tested

APPLICATIONS

 Load Switch  Battery Switch PRODUCT SUMMARY RDS(on) (ΩVDS (V) ) ID (A)d Qg (Typ.) 0.016 at VGS = - 4.5 V - 20 - 40 13 nC 0.025 at VGS = - 2.5 V - 35 Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 95 °C/W. d. Based on T C = 25 °C. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit VDrain-Source Voltage DS - 20 VVGate-Source Voltage GS ± 12 TC Continuous Drain Current (TJ = 150 °C) = 25 °C ID - 40 TC A = 70 °C - 35 - 30.0TA = 25 °C a, b - 28TA = 70 °C a, b IPulsed Drain Current DM - 150 TCContinuous Source-Drain Diode Current = 25 °C IS - 3.5 - 2.1TA = 25 °C a, b TC Maximum Power Dissipation = 25 °C PD TC W = 70 °C 27 2.5TA = 25 °C a, b 1.6TA = 70 °C a, b TJ, TOperating Junction and Storage Temperature Range stg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter TSymbol ypical Maximum Unit t ≤ Maximum Junction-to-Ambienta, c 10 s RthJA 40 50 °C/WMaximum Junction-to-Foot RthSteady State JF 24 30 J387S-VB TO-252 S GD www.VBsemi.com S G D g P-Channel MOSFET J387S-VB Datasheet

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VGS = 0 V, IDDrain-Source Breakdown Voltage = - 250 µA - 20 V VDS Temperature Coefficient ID = - 250 µA - 31 mV/°C VDS ΔVDS/TJ ΔVGS(th)/TVGS(th) Temperature Coefficient J 4.5 VDS = VGS, IDVGS(tGate-Source Threshold Voltage h) = - 250 µA - 2.0 V VDS = 0 V, VGSIGate-Source Leakage GSS = ± 12 V ± 100 nA VDS = - 20 V, VGSIZero Gate Voltage Drain Current DSS = 0 V - 1 µAVDS = -20 V , VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta VDS ≤ - 5 V, VGS ID(on) = - 10 V - 40 A Drain-Source On-State Resistancea 0.0VGS = - 4.5 V , ID RDS(on) = - 7.0 A 16 Ω0.0VGS = - 2.5 V, ID = - 5.6 A 25 Forward Transconductancea gfs VDS = - 15 V, ID = - 7.0 A 18 S Dynamicb CInput Capacitance iss 1 VDS = - 10 V, VGS = 0 V, f = 1 MHz 455 C pFOutput Capacitance oss 180 CrsReverse Transfer Capacitance s 145 VDS = - 10 V, VGS = - 10 V, ID QTotal Gate Charge g = - 7.0 A 25 38 nCVDS = - 10 V, VGS = - 4.5 V, ID = - 7.0 A 13 20 QGate-Source Charge gs 3.5 QGate-Drain Charge gd 5.5 RGate Resistance g f = 1 MHz 0.4 2.0 4.0 Ω td(onTur n-On Delay Time ) VDD = - 10 V , RL = 2.7 Ω ID ≅ - 5.6 A, VGEN = - 10 V, Rg = 1 Ω 10 20 t ns Rise Time r 13 20 td(ofTurn-Off DelayTime f) 23 35 tFall Time f 91 8 td(oTurn-On Delay Time n) VDD = - 10 V , RL = 2.7 Ω ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω 38 57 tRise Time r 89 134 td(ofTurn-Off DelayTime f) 22 33 tFall Time f 11 17 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I S - 6.TC = 25 °C 5 APulse Diode Forward Current ISM - 30 Body Diode Voltage IS = - 5.6 A, VGS VSD = 0 V - 0.71 - 1.2 V Body Diode Reverse Recovery Time t rr IF = - 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C 22 33 ns Body Diode Reverse Recovery Charge Q rr 17 26 nC Reverse Recovery Fall Time ta 13 nsReverse Recovery Rise Time tb 9 J387S-VB www.VBsemi.com g - 0.5

25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 012 3 45 ID - Drain Current VDS - Drain-to-Source Voltage (V) (A) VGS =1 0 V thr u 3 V VGS =2 V VGS = 1V 0.0 0.0 0.0 0.0 0.0 0.01 0 5 RDS(on) - On-Resistance (Ω 10 15 20 25 30 ID - Drain Current (A) VGS =2 .5 V 04 8 12 16 20 24 VGS - Gate-to-Source Voltage (V Qg - Total Gate Charge (nC) ID =7A VDS =1 0 V Tran VDS =1 6 V sfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 1.6 2.4 3.2 4.0 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) TC = 25 °C TC = 125 °C TC = - 55 °C Crss 300 600 900 1200 1500 0 6 12 18 C 24 30 iss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss 0.6 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 RDS(on) - On-R TJ -J unction Temperature (°C) ormalized) esistance VGS = - 4.5 V,I D =-7 A VGS =-1 0 V,I D =-5 .6A J387S-VB www.VBsemi.com g VGS = 4.5V

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage 0.1 100 TJ = 150 °C IS - Source Current VSD -S ource-to-Drain Voltage (V) (A) TJ = 25 °C On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.01 0.02 0.03 0.04 0.05 04 8 12 16 20 VGS - Gate-to-Source Voltage (V RDS(on) - On-Resistance (Ω) TJ = 25 °C TJ = 125 °C ID =7A 0.001 0.01 0.1 1 10 100 Power (W Time (s) Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 0.1 1 10 ID - Drain Current 100 0.01 (A) 0.1 =2 5 °TA C Single Pulse 100 ms 10 s DC Limited byR DS(on)* BVDSS Limited 10 ms 1m s J387S-VB www.VBsemi.com Threshold Voltage - 0.2 - 0.1 0.1 0.2 0.3 0.4 0.5 - 50 - 25 0 25 50 75 100 125 150 175 ID =5m A g VGS(th) ID = 250 μA Variance (V) TJ - Temperature (°C)

25 °C, unless otherwise noted C * The power dissipation P D is based on TJ(max) = 150 ° C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. urrent Derating* 0 25 50 75 100 125 150 TC - Case Temperature (°C) ID - Drain Current (A) Power, Junction-to-Foot 0 25 50 75 100 125 150 Power (W TC - Case Temperature (°C) Power Derating, Junction-to-Ambient 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 Power (W TA -A mbient Temperature (°C) J387S-VB www.VBsemi.com g

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 110 10 10 1000-1-4 100 0.2 0.1 Normalized Effectiv Square WaveP ulse Duration (s) e Transient Thermal Impedance 0.1 0.01 Notes: PDM t1. Duty Cycle, D = 1 2. Per Unit Base = RthJA = 75 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-210 10 0 11-1-4 0.2 0.1 Duty Cycle = 0.5 Normalized Effective Square WaveP ulse Duration (s) Transient Thermal Impedance 0.1 0.01 Single Pulse 0.02 0.05 J387S-VB www.VBsemi.com g

  • Dimension L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 J387S-VB www.VBsemi.com g

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.090 0.087 0.243 J387S-VB www.VBsemi.com g

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