2SJ334 TOSHIBA | Alldatasheet
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TOSHIBA 25)334 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L?-7-MOSV) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE Unit in mm
APPLICATIONS
toto; 93.2202 +9 [des © 4V Gate Drive a 3 ¢ Low Drain-Source ON Resistance : RDS (ON)=29m0 (Typ.) 2 a bd @ High Forward Transfer Admittance : |Yfs|=23S (Typ.) “ uO I iz @ Low Leakage Current : Ipgg=—100/A (Max.) (Vpg= —60V) | K 3 f @ Enhancement-Mode : Vih=—0.8~—2.0V 0.7540.15 2 | ry q MAXIMUM RATINGS (Ta = 25°C) Py ¥ 3: I \\45 CHARACTERISTIC SYMBOL Tal - r 3 3 rain-Source Voltage Vpss Vv 1. GATE @ Drain-Gate Voltage (RGg=20kQ) VDGR | -so | v | 2. DRAIN 2 Gate-Source Voltage Voss 3. SOURCE ee Drain Current | | EIAJ SC-67 Drain Power Dissipation (Pe=25°0) | Pp | 45 | w |[TOSHIBA 2-108 Single Pulse Avalanche Energy Weight : 19g Avalanche Current [ian | -s0 | a | [Repetitive Avalanche Energy* | Bar | 45 | mi_| Channel Temperature Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Caso Thermal Resistance, Channel to Ambient | Reh (ch-a)| 62.5 [°C/W] Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=—50V, Toh =25°C, L=747pH, RG=250, IAR=—30A This transistor is an electrostatic sensitive device. Please handle with caution.
261001 AA2
@ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to their inherent electrical Sensitivity and vulnerability to physical stres. itis the responsibilty of the buyer, when utliing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsiblity is, assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property Or other rights of the third parties which may result from Its use. ‘No license Is granted By implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others @ The information contained herein is subject to change without notice. 1998-01-14 1/5
TOSHIBA (281334 ELECTRICAL CHARACTERISTICS (Ta = 25°C) cuaracrenismic | svarpot | HST CONDON [an TP. [MAX [ONT] Gate Leakage Current Iass Ves=+16V, Vps=0V [ — | — | +10] za | Drain Cutoff Current | Ings __|Vps= -60V, Vas=0V | — | = |-100] a | Drain-Source Breakdown = Fanart [wl =| [| Gate Threshold Voltage Vpg=—10V, Ip=-1mA [-o8| — | -20| v_ | Drain-Source ON Resistance [RDS (ON) Vas= ~4V, Ip= =154 | — | 46] 60] mQ Forward Transfer Same [nw feesnsnenn | | =| [| Reverse Transfer Vps= —10V, Vas=0V Capacitance Crss | pte 460 pr | — [1450] — | Ip=—-15A Rise Time ov D ‘ ves LJ Vout -10V Turn-on Ti ti RL= 25 Switching g 20 |= | =| -| Time xi Fall Time te C 35 Vpp=-—30V . . VIN : tr, te<5ns Turn-off Time | toff Duty =1%, tw=10ps 130 Total Gate Charge (Gate- Q 110 Source Plus Gate-Drain) 8 Vpp=—48V, Vgg=—10V Gate-Source Charge | Qe [p= -308 [= [asf — | 7° Gate-Drain Miller”) Charge | Qua __| [= | ss] — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) cuaracrerustic —[svarpou | TEST CONDITION |i. TP. [MAX [ONT ae Ces ee se Current Pulse Drain Reverse Current | Ippp | — | — | — | x20 | | Diode Forward Voltage Vpsr_[Ipr=-30A, Veg=0V |= | — [ur] v | Reverse Recovery Time IprR=—30A, Vag=0V | — | 100] — | ns | Reverse Recovery Charge dIpR/dt=50A/ us [= [ois] — | xc | MARKING z * Lot Number
5334 TYPE [- Month (Starting from Alphabet A)
U NIG Year (Last Number of the Christian Era) 1998-01-14 2/5
TOSHIBA 25)334 to Ip - Vps. +50 Ip - Vos ine” /A Ant “V-s0 6 | J | || gounon PTZ |_| te=28¢ (A 2 aa L = 2-4 < Mian = at < | fief fd | ee 7A ee ee 2S ge LAY A g 7, Ace e |W | ttt cae) AEE [| | z 2/2 e/a
2 Jf _] tt ts | 6 ft dt vcs--av
Wee tt tt vas=—2v | witty tty tT 0 02 04 0.6 08 1.0 0 2 -4 -6 8 -10 DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN-SOURCE VOLTAGE Vpg (V) Ip — Vas Vps — Vas. i ee a | Ba. EAE : HEE 8" ] g -16 if @ -16 cg ee ee eT IW TTT coe oe) s JV TP oan a Fy BL eNSeeeee e j/ [1] ip | = os HA) ett
2 Lt Alt tt es LINEN Ey TT
0 -1 -2 -3 4 5 0 —4 -8 -12 -16 20 GATE-SOURCE VOLTAGE Vgg (V) GATE-SOURCE VOLTAGE Vgg (V) 100 lYts| — Ip os RpS(ON) — ID Pacts) 6 9 [eee Ili | [ill Eo ass é i eal fg SS et ee atl 3 sos a SS et Beecher tt Zee BF oo vos 1 5 3 i es 3 | $ conon LIT ET Z 2 eT DRAIN CURRENT Ip (A) DRAIN CURRENT Ip (A) 1998-01-14 35
TOSHIBA 25)334 Rps(ON) — Te 100 Ipr - Vps M"[_comwos source | TT | TT | 2 ee SSS : oS 4a a a) A a Ne P LL - ia 67 eee 2 oe _ i tt e io 4a
82 ET ee sc Pe | 3 = === =e
3° [J ee | a fy | 3 vo ae —< e 3 et 2 [fe Pree TEP ET] 8 WL Fy frerewt TTT | 005 gaa 00 a a CASE TEMPERATURE Te (°C) DRAIN-SOURCE VOLTAGE Vpg (V) CAPACITANCE — Vps Vth — Te 10000 —— a 25 g wal ESSE ee ee & ntl ase p= — 1m
3 IK ESE || a
Bog — HUM NUTINI et = & eT 8 -10 — Sattlie=e z © 309 wos t¥ | | Bf wee | UT 8 ee -01 -0.3 -1 -3 -10 -30 -100 -80 -40 0 40 80 120 160 DRAIN-SOURCE VOLTAGE Vpg (V) CASE TEMPERATURE Te (°C) _7 DYNAMIC INPUT/OUTPUT
60 Pp ~ Te 00, coMoe CHARACTERISTICS -”
Fs TEE: Z a5 V7 | | |e os amenun s FORA bet WA : ee a 5 al hoa ffs é 2 ,f [i> AUT TT s IWIYA VT Ty é ae aa Ae 2 ~- EPP P IN Tt 5 XK on 2 4 2 A EET TTT a EPPA ASE % 40 30 120 T60 200 % 40 «80 120 160 200 CASE TEMPERATURE Te (°C) TOTAL GATE CHARGE Qe (nC) 1998-01-14 4/5
TOSHIBA 28)334 "th — tw SS Sr SS SS aa ez bee err in 2 meters TTT) 88 oe SE aw
5 Mon 1007 iim 10m 100m i io
PULSE WIDTH ty (s)
00 SAFE OPERATING AREA Eas - Teh
_ 000) PIU TTT TTT es en a ope] NT FS NSS Se @ [XPETT ET ETT 1 og =P NC NH = of IN TE ET TT -2of ONTNUIONS Cit ome STH e LTAETTE TTT Es CT STATIN | NEE 2 |)TXELELLIO 400) © me ESET SCONE § FE reo 4 of |_| TINT TTT 8 _s CoN 200) aN
3 COI IN COOOL) See
= {TIME LTT NTI CNL TEMAATERE Ta 6 -05) NONREPETITIVE, Tineany with nese inp —L_L_ LAH ev TAR wc" fs u h many) 1 =3 -10 30 100 “BV 4 / \\ " VoD / \\ Vps / \\ TEST CIRCUIT WAVE FORM Peak IAR=-30A, RG=250 gag= 1, .2.(—BYDSS_ vop= Sov, pes Eas=Q ‘LP “Bypss-Vpp) 1998-01-14 5/5