J329

2SJ329 NEC | Alldatasheet

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; . . | : c P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ee SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE a DESCRIPTION CKAGE DIM A - . A PAI ENSIONS The 2SJ329 is P-channel MOS Field Effect Transistor designed {in millimeters) for solenoid, motor and lamp driver. FEATURES 10.0203 es04 _ © Low On-state Resistance $3.220.2 27202 Ros(on) = 47 mQ TYP. (Ves = -10 V, Ip = -8 A) ee | S Ros(on) = 80 mQ TYP. (Ves = -4 V, Ip = -6 A) aa ° © LowCiss Cis = 2 150 pF TYP. 3| 8 © Built-in G-S Gate Protection Diodes g 3 2 a 1:2 3 QUALITY GRADE oe Standard S ] Please refer to “Quality grade on NEC Semiconductor Devices” ~ z (Document number IEI-1209) published by NEC Corporation to = know the specification of quality grade on the devices and its 3 recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) [1520.2 Drain to Source Voltage Voss 60 Vv 2satye| \\|" | asa, , gi Gate to Source Voltage Vessiac) ¥20 Vv 2. Drain Gate to Source Voltage Vessioc) -20,+10 V 3. Source ” Drain Current (DC) In(oo #150 OA Drain (0) Drain Current (pulse) ID(pulse)* 60 A Total Power Dissipation (Tc = 25 °C) Pr1 35 Ww Total Power Dissipation (Ta = 25 °C) Prz 2.0 Ww Body Diode Gate (G) Channel Temperature Teh 150 °C MAX. Storage Temperature Tstg -55 to +150 °C Gate Protection Diode * PWS 10 us, Duty Cycle $ 1% Source (S) Document No. TC-2464 (0.D. No. TC-7969) Date Published November 1993 M © NEC Corporation 1993

ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC sympo. | min. | Typ. | MAX. | UNIT TEST CONDITIONS } Drain to Source On-state Resistance | Rosen | | 80 | 110 | mQ | Vos--4V,lo--6A Gate to Source Cutoff Voltage | Vesom [| -10 | 15 | 20 | v | Vos = -10 V, lo = —1 mA Forward Transfer Admittance [lvsl [| eo [| 12 | | $s | Vos=-10V,--8A Ri=3.89 ~ Test Circuit 1: Switching Time TUT. Vet Re ee) 90 % Mine | gros bis ave °6.@ rc“ Yoa I’ Form | © lo(-) 90 % 90 % lo lo - o— Form | teat] ft town! | ft "| "| t Too! fort! t=1ys Baty Eycle $ 1% Test Circuit 2: Gate Charge lo=-2mA 4 : — TUT. Re PG. 500 | T Voo

ELECTRICAL CHARACTERISTICS (Ta = 25 °C) ~ DERATING FACTOR OF FORWARD BIAS. SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 100 pS SS x % Se NS nes oe as Neel 5 100 =

2 NX Ee ee SO

Ss < —— Set SNOT 5 80 IN 2 0 — SA ES ee SH =e IN 8 SNH pa LEP NTT 8 EeeBSRESS £ 40 oe a & 2 , —— os or > LETT ITT N a HH FE 5 N -o. [Single Pulse FUT EP i) 20 40 60 80 100 120 140 160 -1 -10 -100 Tc - Case Temperature — °C Vos - Drain to Source Voltage - V TOTAL POWER DISSIPATION vs. DRAIN CURRENT vs. CASE TEMPERATURE DRAIN TO SOURCE VOLTAGE 35 -80 - J NIT eV ere pe INCEPT go EA 2 2 s PLENTY og AH i é 5 ol AAT TTI 3 e Wa ESE NET 8 YA a 1 tal fet it tt i _ | eee / AoeGeeeee TPT TTT Xt COO 0 20 40 60 80 100 120 140 160 0 -2 4 +6 8 -10 Tc - Case Temperature - °C Vos - Drain to Source Voltage - V = z TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 10 ee SS SS aaa ‘ EEE EES SEtH fneny = 02,5 (CW tear

8 FER ee

3 FSS

c a A (2 @ GOO rrr Rnene = 3.57 °C I = Ss Sa iS SSS oS SF SS Se SS SSS FSS SSS ESF SS SS EEE: £ ee en ee ee oe oS oo ee Ss ee ot ee ee a es et | | Son kek rT 0 0) SS SS SS Say & ERS eS See a A a | | = oorL_ LUM TTA TTI TTT TTT TTI singte Pulse | & 10y 100 we im 10m 100 m 1 10 100 PW — Pulse Width - s

FORWARD TRANSFER ADMITTANCE vs. TRANSFER CHARACTERISTICS DRAIN CURRENT

10 SSS 0 100

SSS == SSe ad ceed atl ETI See 2 SSeS See < Tose ge | cs a | $ wel AL TT . oo Con fae) ae S| err ==> SSS == Bee EN & FEAR E EES 3 BeBe 2 a ee 2 la CECE 8 Eee Be ee = fessor | TM | TTT -1 A = 1 Ves - Gate to Source Voltage - V lo - Drain Current - A ~ DRAIN TO SOURCE ON-STATE RESISTANCE DRAIN TO SOURCE ON-STATE RESISTANCE o vs. GATE TO SOURCE VOLTAGE S vs. DRAIN CURRENT g 0.15 g 0.16 ~ e LLL LT fem - _TUM Tim Tm E TPP eee Sol Ll c a 0.12 8 010 ee | eLINTETE TS Sool CI CTF \\ CO eres = 4 V WOONCO | CRE SS & oct LH mill a s | LUM Tl Lill - fa) fat LET ET TET LCT Fo g 0 5 =10 -15 -20 g 01 1 -10 -100 « Ves — Gate to Source Voltage - V = lo - Drain Current -A GATE TO SOURCE CUTOFF VOLTAGE vs. DRAIN TO SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE g vs. CHANNEL TEMPERATURE > 20 2 0.16 s —- {TTT ' LETTTT TI I ERLE Fo EE a ed ia a ae oe i atid se § och + | tt | | 1 Zoi | | ft tT Tt gL ier] | é ot | | tT tT tt 2 oe I ox 104 Pb 5 | | ) obezmE TT TT | + of | | | tt tt -50 0 50 100 150 g -50 fe) 50 100 150 Ten ~ Channel Temperature - °C = Ten — Channel Temperature - °C

SOURCE TO DRAIN DIODE CAPACITANCE vs. DRAIN TO. FORWARD VOLTAGE SOURCE VOLTAGE

10 See 1000 pe

• a . =e < SS AS SS <a | a ee oe gee ee, | : PSE : a 7 ROS 3 ot few | || | ee lll o Za g ~ [th Bp eS] © 100 SS SS 2 , Soo Sse

3 A A OS > a A A 8 |

2 | fist vf ---—— Qo Fees i fy Py pa ee | | * (TTT ET TI Steere TTT TTT te) 0.4 08 1.2 1.6 2.0 -1 -10 -100 Vso ~ Source to Drain Voltage - V Vso — Source to Drain Voltage — V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS. ~ 10000 SEES 12 -60 2 [vo= OV == = eo > Ae. T | esi = 10 VE Ea 7 of EET TAT og 3 © © — V ® g } B g A aes TTT ve TT 8 © yoo LUI IM TT ga , s 3s FEE toon 2 g = ee SS aoe é [oP ee TT 8 *COP PEE |™ & © roo tL Te 2 VA, 2

2 EaTEE ipeaasint

• s eases a i, lo =-20A =

2 EAI ETI too COT 3 7 eA sek 10

g Coo > ] << $s 2 ol Ft TUTTI | TTT PT Seer rr, -0.1 -1 -10 -100 i) 20 40 60 80 100 120 tp — Drain Current - A Qs — Gate Charge — nC REVERSE RECOVERY TIME vs. REVERSE DRAIN CURRENT 100 ——— Ee EEE EEE Ves = 0 EEE ates ano _ 1 a a

2 COCcIe cn e

g a a | a ce * ok LUM TIE TT 0.1 1 10 100 Ir — Diode Forward Current — A

[esieionnoane Te Safe operating area of Power MOS FET. TEA-1034 Application circuit using Power MOS FET. TEA-1035 Quality control of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. [ _Mel1202— | Assembly manual of semiconductors devices. 1EI-1207 No part of this document may be copied or reproduced in any form or by any means without the prior written — consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 pee