2SJ327 NEC | Alldatasheet
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NEC 2SJ327, 2SJ327-Z r SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2$J327 is P-channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS . . . in millimeters signed for solenoid, motor and lamp driver. 2SJ327 oc 6.540.299] 2,340.2 FEATURES 8.00.2, | 2 0.5+0.1 © Low On-state Resistance ame) | Roston) = 0.13 Q TYP. (Ves = -10 V, Ip = -2 A) 3 3 Rosien) = 0.21.2 TYP. (Vos = -4 V, lo = -1.6 A) “yb 2 shez © Low Ciss Ciss = 750 pF TYP. HK =| © Built-in G-S Gate Protection Diode iitoalll Zo rm QUALITY GRADE Standard 0.6+0.1 | |0.6+0.1 Please refer to “Quality grade on NEC Semiconductor Devices” ReSF to (Document number IEI-1209) published by NEC Corporation to eel know the specification of quality grade on the devices and its recommended applications. 2853272 roo 35 2,340.2 ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) 4 7 af Drain to Source Voltage Voss ~60 Vv S| Ad $ 2 pal Gate to Source Voltage (AC) Voss #20 Vv SH i454] Ble ee Gate to Source Voltage (DC) Voss -20,+10 V cof Woz 2 os Drain Current (DC) lowe 740 A 19102 | lo o max MAKES Drain Current (pulse) loipuiser* ¥16 A lp alor3} 08 Total Power Dissipation (Te = 25 °C) Pri 20 Ww meee Total Power Dissipation (Ta = 25 °C) Pre 10 Ww he al 1 Gate Channel Temperature Teh 150 °c Drain (D) 2. Drain Storage Temperature Tstg --55 to +150 °C 3 pource rain * PW $10 us, Duty Cycle S 1% he body Gate (G) diode Gate protection diode Source (S) Document No. TC-2462 (0.D. No. TC-7961) Date Published November 1993 M. © NEC Corporation 1993 Printed in Japan
NEC 2SJ327, 2SJ327-Z ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC sympo. | min. | Typ. | MAX. | UNIT | TEST CONDITIONS ) Drain to Source On-state Resistance [Rosen | | 013 | 047 | @ | Ves=-10V,l0--20A Drain to Source On-state Resistance | Rosen | | o21 | 034 | @ | Ves=-4V,l=-16A Fra Tater aaniene | Iw! [a0 [aa || “8 [vest | i R= 159 - Test Circuit 1: Switching Time but a [ve 90% ne Poa om (F™ PG.@ Po = 1 00 + lo(-) Po 90 % lf goal : Vale) oye Wave} 01224 ES fol Form 0 teion | t ve | t ha ina t= 1ps Duty Cycle $1 % Test Circuit 2: Gate Charge bur: Ig =-2mA Re e@ te 2 | a
NEC 2SJ327, 2SJ327-Z ELECTRICAL CHARACTERISTICS (Ta = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA. 9100 ee
8 EER -—
é ff € sof +N ae PY 2 £ FRosion Limited =P FH} é N 6 ee ost 2 a0 IN & LUTE fl a 20 eS SO | = Litt i] NI pee Hi
5 N -orltes 25ecl [TTT TT TTT
0 20 40 60 80 100 120 140 160 -1 -10 -100 Tc - Case Temperature - °C Vos — Drain to Source Voltage - V TOTAL POWER DISSIPATION vs. DRAIN CURRENT vs. CASE TEMPERATURE DRAIN TO SOURCE VOLTAGE 35 -16 7 7 za tt iti] tl vf fiYev | | | eat tt Tt tt ie, Litt i t £1 iy < -12 s 25 Sooo AAR i 2 5 Lt Pt
2 NI e ;
a NM °° 8 // Cee a a § 10 DI t ZL ET ET ° tt tt Wy * LETT? TN PITT Ere yy NS 0 20 40 60 80 100 120 140 160 i?) -2 4 +6 8 -10 Tc- Case Temperature - °C Vos - Drain to Source Voltage - V z TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000 SS Se
9 = ae
1 ESE HEE ett E HH Channel to Ambient SEPT
8 i ee eee nee TTT Rivenay = 125 °C/W | B er th Fa) ee SE a et E EEE eer ttt Channel to Case HH 2 7 SEE TP Reeve = 6.25 °C/W TTT
5 Fata
2 oo OC ori Single Puse | é 10u 100 u 1m 10m 100 m 1 10 100 PW - Pulse Width - s
NEC 2SJ327, 2SJ327-Z FORWARD TRANSFER ADMITTANCE vs. TRANSFER CHARACTERISTICS DRAIN CURRENT =< (SSS _ $ [otee tT AE & (pec ere tin z i = ext ae 4a a Leer | Ill 2 es ee / A ee | g a | Ae rn 2 a fexerl lll CTT nae =2 3 wa 5 ~ ey -1 ~10 Ves ~ Gate to Source Voltage - V lo- Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE vs. DRAIN CURRENT Ga os a 05 ~ 8 s st |] tt tt e of | LTT TT
8 Ly TTT Ty & | TTT PT
zo | | | tT tT tT | g oo | Pt é LAL? TT Tt & ~ |] Uies=-v DTT 3 3 an sf IN | | tT ty ry ee ee | & “TT REE TT & | TT ff eee a oo AT eo ETL TT TTT yy es oe TI LTT - gs [o=2al | [| | TT | a ee | Ves - Gate to Source Voltage - V lo - Drain Current - A GATE TO SOURCE CUTOFF VOLTAGE vs. DRAIN TO SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE vs. CHANNEL TEMPERATURE, > -20 a 05 » AEP Ty ty » EEL TTT
2 De sf | | | | ty -
tof [TT TTT | 3 Peer iene @ 05 € a1 lo=-2A 3s © 01 = & ~ z 8 oD oO 50 100 150 é oF i) 50 100 150 Ten — Channel Temperature - °C Ten — Channel Temperature - °C
NEC 2SJ327, 2SJ327-Z CAPACITANCE vs. DRAIN TO. a a ee 10000 . SSS SSS SS COPPER = Poke CC 8 skh tA $1000 ll
2 SVs =-10 VSS es CSS SS
2 & Se - | eet ree 8 fete) 8 ERS
3 ALL “100 ll
Soot potef ep PPR Lt SSS eee eel is} === === === ° EE EEC HH 4 eee ee q —— ee § FRR 6 Eerie eco $ softer mre] TITTY TTT
0.01 LTT TT TPT ttt yy oO 100E ia
0 0.2 04 0.6 08 1.0 12 -1 -10 -100 Vso ~ Source to Drain Voltage - V Vos - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS PERERA et es a | ; a A A ' -10 -50 5 { g pop tT yA tT Tt s 2 100 ee tt S 38 40 5 a IEEE oH & “TV fT st yt @ ? AHH sey 8 MT TA TT voo= sav 3 = jC LUT TT re="0 0 ee 0.1 -1 -10 -100 0 10 20 30 40 lo- Drain Current -A Qy - Gate Charge - nC REVERSE RECOVERY TIME vs. REVERSE DRAIN CURRENT 9000 pS ————. eat ° a ~ c a SO a —& [ TTP TTT Foot IIE | TUTTI 8 100 -—
4 Sl —— Ts
& Eee aH 8 — Tr es ee ee | & ~ TT tT TTT ' Ves = 0 Soh LTT [iter ae 0.1 1 10 lr - Diode Forward Current - A
NEC 2SJ327, 2SJ327-Z Reference Application note name [no | Safe operating area of Power MOS FET. Application circuit using Power MOS FET. TEA-1035 Quality control of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. [| meri202 | Assembly manual of semiconductors devices. 11-1207 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 926 eee