J325

2SJ325 NEC | Alldatasheet

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NEC | 2$J325, 2$J325-Z » A ee SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE pa

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The 2SJ325 is P-channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS . . in millimeters signed for solenoid, motor and lamp driver. 28325 6.540.235] 2,340.2 FEATURES §.020.2, [2 0.540.1 WN © Low On-state Resistance poy 4 Rosion) = 83 MQ TYP. (Vas = -10 V, Ip = -2 A) 3 | 3 Ros(on) = 0.15 Q TYP. (Vas = ~4 V, Ip = =1.6 A) “| [12 3{elz © Low Ciss Ciss = 800 pF TYP. HK | © Built-in G-S Gate Protection Diode 1ato.l| ze bd QUALITY GRADE ~ Standard 9.640.1 _,| |0.6+0.1 Ww Please referto “Quality grade on NEC Semiconductor Devices” SFR 10) (Document number IEI-1209) published by NEC Corporation to (iro a] | know the specification of quality grade on the devices and its recommended applications. SIZ cin 34 2.3402 ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) % ae 50 Drain to Source Voltage Voss -30 v | | Pid 3 Ed fa Gate to Source Voltage (AC) Vess 7202 SH] 5-4] Ble ca Gate to Source Voltage (DC) Voss -20, +10 -V ot a st os . <, Py | i ba . Drain Current (pulse) Iniputsey* 16 A fT Ip ala-al 0.8 Total Power Dissipation (Tc = 25 °C) Pri 20 Ww Hanae Total Power Dissipation (Ta = 25 °C) Prz 1.0 w fie al 1. Gate Channel Temperature Teh 150 °c Drain (D) 2. Drain Storage Temperature Tstg -55 to +150 °C 3 Source * PWS 10 us, Duty CycleS 1% + Drain body Gate (G) diode Gate protection diode Source (S) sa Document No. TC-2460 Frublshed October 1986 M Date Publishes tober . Printed in Japan © NEC Corporation 1993

NEC 2SJ325, 2SJ325-Z ELECTRICAL CHARACTERISTICS (Ta = 25 °C) [__chaacrensne | svwoa [wn [| Wr [wax | unt | vesrconomons | C) [Dent Sours OnsuteResstnes | Ramm [| one | om | a [var-ov.b--200 | [into Source Onsite Resianes [Rowe [| ars | oa | a [varntvib=-iea | [ cat Source CuottVotoge | Vann | 40 | =16 | 20 |v [Wanct0vsn=-tma | [Forwera Tansteradmizancs | Iwi | so [2 |_| 8 _|vas-tov.n--z0n | [Drintsoagecorene | me P| oO | am |v over [ cet Source ntegsCurene [me [|| He | vans. vero | [oay Dias ForwersVotoge if wf ae |p vernon | VY Test Circuit 1: Switching Time DUT a [va 90 % P6.@ Re 10.0 oo [fO™ = foo " + Tot) Pe 90 % bf gost | 10 % 10 % Ves = -10 V fave] OF oe _ Fort san i mii fe T= 14s Duty Cycle $1 % Test Circuit 2: Gate Charge DUT: Io=-2mA Ru Q fea | VY

NEC 2SJ325, 2SJ325-Z — NEC 28825, 289325-2 TYPICAL CHARACTERISTICS (Ta = 25 °C) Ww DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA. 100 * LITT TT =a « 100 ERNE 1_ SSeS 2 5 I PO INET ¢ ASR Ee eo tL ITN IT é CO SSShob til Sao N 6 CTI hob ei € 2 SS OC eee SEBEENGn == aa aee oD 20 * A A |

2 LETT TT NI Regotesl TIE TET

5 N -o.(SnaePusel | LTTE TT TTT i) 20 40 60 80 100 120 140 160 -1 -10 -100 Ne Tc- Case Temperature - °C Vos — Drain to Source Voltage - V TOTAL POWER DISSIPATION vs. DRAIN CURRENT vs. CASE TEMPERATURE DRAIN TO SOURCE VOLTAGE 35 ~16 y =a- TTT TIT aa el for TT TT pitt] TTT Ty < al bey | TTT oS 5 1 Pa ot HA ET CONE eg Heat WN 2 < eT ENTE eo i -—— | PCCCEPN 2A - NO 5) / eee LTE??? NO ARSSSS00:8 oO 20 40 60 80 100 120 140 160 0 -1 -2 -3 4 5 Tc- Case Temperature - °C Vos Drain to Source Voltage - V —— = TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH. V0 0 S ——

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z Fe | | ba FE ei Ghannel to case ww tit & os | i £ eo oT a ee oe or oe oo aT 1 a cee 2 or TTT CITT Tingle Puise| é 10m 100 Im 10m 100m 1 10 100 PW - Pulse Width - s

NEC 2SJ325, 2SJ325-Z HARA‘ 10 eS SS SSS SS O10 Sy SSS SS SS 8 EE Fria = 25 cred ~ « Seer ed eC Al =e oe eer | a eee Ol == 3 Be =r Scene == ee 2a || || & | + ASS 2 4S sai ¢ aLLIZ ET TT : Eee on | {" LC TTA Ta a | | z os JUICE res] Ea, [evew TUE TTT Ves— Gate to Source Voltage - V lo- Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE a DRAIN TO SOURCE ON-STATE RESISTANCE ¢ } a GATE TO SOURCE VOLTAGE i ° Pia DRAIN CURRENT - Cts (oa foot t ht TTT TT Boal TCH . 2 ge LEAT TT TTT § CCC € oot TNE TT TT & CI Cn

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2 2 2 =I COU TC LEELELLLL © on ve =-ov ll | - @ Gere ere ? Eo 5 0 4 8 -12 -16 -20 : on -1 -10 -100 = Ves~ Gate to Source Voltage -V lo~ Drain Current —A GATE TO SOURCE CUTOFF VOLTAGE vs. DRAIN TO SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE o vs. CHANNEL TEMPERATURE > -20 ~ 03 ce ae PTTITLLLLL Hy Da YS gagpmet ft | ttt ir ee ¢ L| Pre g 02 eo sf oS PLT eee er | Cee e Cee Loe g 05 2 am = leer 1 RY s -50 0 50 100 150 5 -50 0 50 100 150 Ten - Channel Temperature - °C « Ten - Channel Temperature — °C CS

NEC 2SJ325, 2SJ325-Z SOURCE TO DRAIN DIODE CAPACITANCE vs. DRAIN TO FORWARD VOLTAGE SOURCE VOLTAGE 10 oS ee es | 10000 ee eS se See oo Se os os | WY < — a a A oe oo so ue Fee ——— 5 =e ! as OY A 1 a MH 8 OO 5 a a ee A 8 a a ee ee 2 | E} ee é LY 4 y tho ee Te SLO TTT & —R= See SE 4 KSSH @ Se SS [oy Pt RH ec ET 3 po - ESSE oe TH Fa fe Oe | 3 a a = Coss! TTT ee ee a a a ee cre a | =m] TUT srl 01 100 oO 04 08 1.2 16 -1 -10 -100 Vso— Source to Drain Voltage - V Vos — Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS. eRe See 7 =o e= JA) 25 E a 2 ri | | | YY] 2 ° ter 3 r\\ | TA ft ~ 2 = LE TT toes | TTT 2 4h Z| “0 # i BEE 8 Ty & WU 5 4A ee § Joc st : Aa ee 2 ASS g = ol LUMI TT ltrs ="0.0 P| td, 0.1 1 10 100 0 5 10 15 20 25 30 lo- Drain Current - A Qs - Gate Charge — nC REVERSE RECOVERY TIME vs. REVERSE DRAIN CURRENT 1000 a a os SS Se a ee Ss SS et Se a SHEE Ww & a AO 0 | ° | & (EOI CO Tt Foo MM TE Ml 3 100 Pt te

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g a A | & ETT SC TTT Ves = 0 5 sol LUMI LUT 5 an 0.1 1 10 100 Diode Forward Current - A

NEC 2SJ325, 2SJ325-Z Reference [____Aewtestonneterame dnd pplication note name oo, Safe operating area of Power MOS FET. Application circuit using Power MOS FET. TEA-1035 Quality contro! of NEC semiconductors devices. ‘TEI-1202 Quality control guide of semiconductors devices. MEI-1202 Assembly manual of semiconductors devices. 11-1207 WS No part of this document may be copied or reproduced in any form or by any means without the prior written VY consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact a, our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 WY